ENA1242A [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用
| 型号： | ENA1242A |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | General-Purpose Switching Device Applications |
| 文件： | 总7页 (文件大小：516K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1242A
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH6442
Features
•
Low ON-resistance
•
4V drive
•
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--60
±20
-- 6
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm)
--24
1.6
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: CPH6
7018A-003
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
2.9
5
0.15
CPH6442-TL-E
6
4
3
Packing Type: TL
Marking
0.05
TL
1
2
0.95
1 : Drain
2 : Drain
3 : Gate
0.4
Electrical Connection
4 : Source
5 : Drain
6 : Drain
1, 2, 5, 6
SANYO : CPH6
3
4
http://semicon.sanyo.com/en/network
61312 TKIM/61808PE TIIM TC-00001429
No. A1242-1/7
CPH6442
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
60
V
μA
μA
V
(BR)DSS
D
GS
=-60V, V =0V
I
I
V
V
V
V
1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
2.6
GSS
V
(off)
GS
=10V, I =1mA
1.2
2.6
D
Forward Transfer Admittance
| yfs |
=10V, I =3A
4.4
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=3A, V =10V
GS
33
42
43
59
65
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=1.5A, V =4.5V
GS
=1.5A, V =4V
GS
46
Input Capacitance
Ciss
1040
90
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
DS
55
t
t
t
t
(on)
12
d
r
18
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
80
ns
d
f
35
ns
Total Gate Charge
Qg
20
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=30V, V =10V, I =6A
GS
3.0
4.2
0.82
DS
D
V
SD
I =6A, V =0V
S GS
1.2
Switching Time Test Circuit
V
=30V
DD
V
IN
10V
0V
I
=3A
D
V
IN
R =10Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
CPH6442
P.G
50Ω
S
Ordering Information
Device
Package
CPH6
Shipping
3,000pcs./reel
memo
CPH6442-TL-E
Pb Free
No. A1242-2/7
CPH6442
I
-- V
I
-- V
GS
D
DS
D
7
6
5
4
3
2
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
DS
=10V
3.0V
1
0
V
=2.5V
GS
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT13778
IT13779
DS
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
100
90
80
70
60
50
40
30
20
100
90
80
70
60
50
40
30
Ta=25°C
I
=1.5A
D
3.0A
20
10
10
0
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT13780
Ambient Temperature, Ta -- °C
IT13781
GS
| yfs | -- I
I
-- V
S SD
D
10
7
5
10
7
V
=10V
V
=0V
DS
GS
5
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
7
0.01
0.01
0.2
2
3
5
7
2
3
5
7
2
3
5 7
10
0.4
0.6
0.8
1.0
1.2
IT13783
0.1
1.0
Drain Current, I -- A
IT13782
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
2
2
f=1MHz
V
=30V
=10V
DD
V
GS
100
1000
7
5
7
5
t
f
3
2
3
2
t (on)
d
100
10
7
5
7
5
3
2
3
0.1
2
3
5
7
2
3
5
7
0
10
20
30
40
50
60
IT13785
1.0
10
Drain Current, I -- A
IT13784
Drain-to-Source Voltage, V -- V
DS
D
No. A1242-3/7
CPH6442
V
-- Qg
A S O
GS
10
9
5
V
I
=30V
I
=24A
PW≤10μs
DS
=6A
DP
3
2
D
10
8
I
=6A
D
7
5
7
3
2
6
1.0
7
5
5
Operation in this area
3
2
4
is limited by R (on).
DS
3
0.1
7
5
2
Ta=25°C
3
2
1
0
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm)
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5 7
0
2
4
6
8
10
12
14
16
18
20
1.0
10
100
IT13787
Total Gate Charge, Qg -- nC
IT13786
Drain-to-Source Voltage, V
DS
-- V
P
-- Ta
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2✕0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13788
No. A1242-4/7
CPH6442
Embossed Taping Specification
CPH6442-TL-E
No. A1242-5/7
CPH6442
Outline Drawing
Land Pattern Example
CPH6442-TL-E
Mass (g) Unit
Unit: mm
0.015
mm
* For reference
0.6
0.95
0.95
No. A1242-6/7
CPH6442
Note on usage : Since the CPH6442 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
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party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1242-7/7
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