ENA0922 [SANYO]
P-Channel Silicon MOSFET General-Purpose Switching Device Applications; P沟道MOSFET硅通用开关设备的应用
| 型号： | ENA0922 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0922
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH3348
Features
•
Ultrahigh-speed switching.
•
1.8V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
--12
±10
-- 3
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1200mm2✕0.8mm)
--12
1.0
150
A
DP
P
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--12
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=--12V, V =0V
GS
--10
±10
--1.4
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
V (off)
GS
=--6V, I =--1mA
--0.4
2.7
D
Forward Transfer Admittance
yfs
=--6V, I =--1.5A
4.5
54
S
D
R
(on)1
I
D
I
D
I
D
=--1.5A, V =--4.5V
GS
70
115
215
mΩ
mΩ
mΩ
DS
DS
DS
Static Drain-to-Source On-State Resistance
R
R
(on)2
(on)3
=--0.8A, V =--2.5V
GS
80
=--0.3A, V =--1.8V
GS
125
Marking : WE
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91907PE TI IM TC-00000901 No. A0922-1/4
CPH3348
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Input Capacitance
Ciss
Coss
Crss
V
V
V
=-- 6V, f=1MHz
=-- 6V, f=1MHz
=-- 6V, f=1MHz
405
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
145
100
8.8
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
80
Turn-OFF Delay Time
Fall Time
t (off)
d
41
t
50
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=-- 6V, V =-- 4.5V, I =-- 3A
GS
5.6
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=-- 6V, V =-- 4.5V, I =-- 3A
GS
0.7
D
=-- 6V, V =-- 4.5V, I =-- 3A
GS
1.6
D
V
SD
I =-- 3A, V =0V
S GS
-- 0.85
-- 1.2
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
V
= --6V
V
DD
IN
7015A-004
0V
--4.5V
I
= --1.5A
2.9
3
0.15
0.05
D
V
IN
R =4Ω
L
D
V
OUT
PW=10µs
D.C.≤1%
G
1
2
0.95
CPH3348
1 : Gate
2 : Source
3 : Drain
0.4
P.G
50Ω
S
SANYO : CPH3
I
D
-- V
DS
I -- V
D GS
--3
--2
--4
V
= --6V
DS
--3
--2
--1
--1
0
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
IT12599
Drain-to-Source Voltage, V
-- V
IT12598
Gate-to-Source Voltage, V -- V
GS
DS
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
300
250
200
150
100
200
Ta=25°C
150
100
--0.8A
--1.5A
I = --0.3A
D
50
0
50
0
0
--2
--4
--6
--8
IT12600
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12601
Gate-to-Source Voltage, V
GS
-- V
No. A0922-2/4
CPH3348
y
fs -- I
I
S
-- V
SD
D
10
--10
V = --6V
DS
7
V =0V
GS
5
7
3
2
5
--1.0
3
2
7
5
3
2
--0.1
1.0
7
5
7
5
3
2
--0.01
3
2
7
5
3
2
0.1
--0.01
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT12603
--0.1
Drain Current, I -- A
D
IT12602
Diode Forward Voltage, V -- V
SD
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
7
1000
f=1MHz
V
= --6V
= --4.5V
DD
5
V
GS
7
5
3
2
Ciss
100
7
5
3
2
3
2
t (on)
d
10
100
7
5
7
5
3
2
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
0
--2
--4
--6
--8
--10
--12
IT12605
--0.01
--0.1
Drain Current, I -- A
IT12604
Drain-to-Source Voltage, V
-- V
D
DS
V
-- Qg
A S O
GS
3
2
--4.5
V
= --6V
= --3A
DS
I
= --12A
PW≤10µs
DP
I
D
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--10
7
5
I = --3
A
D
3
2
--1.0
7
5
3
2
Operation in this area
is limited by R (on).
DS
--0.1
7
5
Ta=25°C
Single pulse
3
2
--0.5
0
Mounted on a ceramic board (1200mm2✕0.8mm)
--0.01
--0.01
0
1
2
3
4
5
6
2
3
5
7
2
3
5
7
2
3
5
7
2 3
--0.1
--1.0
--10
IT12869
Total Gate Charge, Qg -- nC
IT12606
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
D
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT12870
No. A0922-3/4
CPH3348
Note on usage : Since the CPH3348 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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This catalog provides information as of September, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0922-4/4
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