ENA0923A [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用
| 型号： | ENA0923A |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | General-Purpose Switching Device Applications |
| 文件： | 总7页 (文件大小：559K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0923A
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH6337
Features
•
Ultrahigh-speed switching
•
1.8V drive
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--12
±10
--3.5
--14
1.6
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
When mounted on ceramic substrate (1200mm2 0.8mm)
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: CPH6
7018A-003
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.15
0.05
CPH6337-TL-E
6
5
4
3
Packing Type: TL
Marking
1
2
TL
0.95
1 : Drain
2 : Drain
3 : Gate
0.4
Electrical Connection
4 : Source
5 : Drain
6 : Drain
1, 2, 5, 6
SANYO : CPH6
3
4
http://semicon.sanyo.com/en/network
61312 TKIM/91907PE TIIM TC-00000903
No. A0923-1/7
CPH6337
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--12
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=-- 12V, V =0V
I
I
V
V
V
V
--10
DSS
DS
GS
DS
DS
GS
=±8V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 6V, I =-- 1mA
--0.4
2.7
--1.4
D
Forward Transfer Admittance
| yfs |
=-- 6V, I =-- 1.5A
4.5
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=-- 1.5A, V =-- 4.5V
GS
54
80
70
115
215
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=-- 0.8A, V =-- 2.5V
GS
=-- 0.3A, V =-- 1.8V
GS
125
405
145
100
8.8
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--6V, f=1MHz
DS
t
t
t
t
(on)
d
r
80
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
41
ns
d
f
50
ns
Total Gate Charge
Qg
5.6
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--6V, V =--4.5V, I =--3.5A
GS
0.7
DS
D
1.6
V
SD
I =--3.5A, V =0V
S GS
--0.86
--1.5
Switching Time Test Circuit
V
= --6V
V
DD
IN
0V
--4.5V
I
= --1.5A
D
V
IN
R =4Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
CPH6337
P.G
50Ω
S
Ordering Information
Device
Package
CPH6
Shipping
3,000pcs./reel
memo
CPH6337-TL-E
Pb Free
No. A0923-2/7
CPH6337
I
D
-- V
DS
I
-- V
D GS
--3
--2
--4
--3
--2
--1
V
= --6V
DS
--1
0
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
IT12599
Drain-to-Source Voltage, V
-- V
IT12598
Gate-to-Source Voltage, V -- V
GS
DS
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
300
250
200
150
100
200
Ta=25°C
150
100
--0.8A
--1.5A
I = --0.3A
D
50
0
50
0
0
--2
--4
--6
--8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12601
Gate-to-Source Voltage, V
GS
-- V
IT12600
| yfs | -- I
I
S
-- V
SD
D
10
7
--10
7
5
V
= --6V
V
=0V
DS
GS
3
2
5
--1.0
3
2
7
5
3
2
--0.1
7
5
1.0
7
3
2
5
--0.01
3
2
7
5
3
2
0.1
--0.01
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT12603
--0.1
Drain Current, I -- A
D
IT12602
Diode Forward Voltage, V
-- V
SD
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
7
1000
f=1MHz
V
V
= --6V
DD
= --4.5V
5
7
5
GS
3
2
Ciss
100
7
5
3
2
3
2
t (on)
d
10
100
7
5
7
5
3
2
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
0
--2
--4
--6
--8
--10
--12
IT12605
--0.01
--0.1
Drain Current, I -- A
IT12604
Drain-to-Source Voltage, V -- V
DS
D
No. A0923-3/7
CPH6337
V
-- Qg
A S O
GS
3
2
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
V
= --6V
DS
I
= --14A
DP
I = --3.5A
D
--10
7
5
I = --3.5A
D
3
2
--1.0
7
5
3
2
Operation in this area
is limited by R (on).
DS
--0.1
7
5
3
2
--0.5
0
--0.01
--0.01
0
1
2
3
4
5
6
2
3
5
7
2
3
5
7
2
3
5
7
2 3
--10
IT12871
--0.1
--1.0
Total Gate Charge, Qg -- nC
IT12866
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT12872
No. A0923-4/7
CPH6337
Embossed Taping Specification
CPH6337-TL-E
No. A0923-5/7
CPH6337
Outline Drawing
Land Pattern Example
CPH6337-TL-E
Mass (g) Unit
Unit: mm
0.015
mm
* For reference
0.6
0.95
0.95
No. A0923-6/7
CPH6337
Note on usage : Since the CPH6337 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A0923-7/7
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