2SK2624FS [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用
| 型号： | 2SK2624FS |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总5页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1320
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK2624FS
Features
•
Low ON-reisitance.
•
Low Qg.
•
Ultrahigh-speed switching.
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
600
±30
3.5
12
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
2.0
25
W
W
Allowable Power Dissipation
P
D
Tc=25 C (SANYO s ideal heat dissipation condition)*1
°
’
Channel Temperature
Tch
150
C
C
°
Storage Temperature
Tstg
--55 to +150
°
Avalanche Energy (Single Pulse) *2
Avalanche Current *3
E
49
3
mJ
A
AS
I
AV
Note : 1 SANYO’s condition is radiation from backside.
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
2 V =50V, L=10mH, I =3A
*
DD
AV
3 L 10mH, Single pulse
*
≤
Marking : K2624
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
No. A1320-1/5
O2208QB MS IM TC-00001659
2SK2624FS
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
600
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=10mA, V =0V
V
mA
nA
V
(BR)DSS
D GS
I
V
=480V, V =0V
1.0
DSS
DS GS
I
V
=±30V, V =0V
±100
5.5
GSS
(off)
GS DS
V
V
=10V, I =1mA
3.5
1.0
GS
| yfs |
(on)
DS
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
V
=10V, I =1.8A
D
2.0
S
DS
R
I
=1.8A, V =15V
2.0
550
165
85
2.6
Ω
DS
D GS
Ciss
Coss
Crss
V
=20V, f=1MHz
=20V, f=1MHz
=20V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
nC
V
DS
Output Capacitance
V
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
V
DS
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
17
d
r
Rise Time
17
Turn-OFF Delay Time
(off)
40
d
f
Fall Time
22
Total Gate Charge
Qg
V
=200V, V =10V, I =3A
GS
15
DS
D
Diode Forward Voltage
V
I =3A, V =0V
S GS
0.98
1.2
SD
Package Dimensions
unit : mm (typ)
7528-001
4.7
10.16
3.18
2.54
2.76
1.47 MAX
0.8
1
2
3
0.5
1 : Gate
2 : Drain
3 : Source
2.54
2.54
SANYO : TO-220F-3FS
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V =200V
DD
L
I
=1.8A
D
≥50Ω
RG
R =111Ω
L
V
OUT
V
GS
=15V
D
PW=1μs
D.C.≤1%
2SK2624FS
15V
0V
V
G
50Ω
DD
R
S
GS
50Ω
P. G
2SK2624FS
No. A1320-2/5
2SK2624FS
I
D
-- V
DS
I
-- V
D GS
4.0
5.0
4.5
V
=10V
DS
Tc= --25°C
3.5
3.0
2.5
2.0
4.0
3.5
25°C
75°C
3.0
2.5
2.0
1.5
1.0
7V
1.5
1.0
V
=6V
0.5
0
GS
0.5
0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, V
DS
-- V
IT01020
Gate-to-Source Voltage, V
-- V
IT01021
GS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
4.0
7.0
6.5
Tc=25°C
6.0
5.5
3.5
3.0
2.5
5.0
4.5
4.0
3.5
I
=3.0A
D
3.0
1.8A
1.0A
2.5
2.0
2.0
1.5
1.0
1.5
1.0
0.5
0
0
2
4
6
8
10
12
14
16
18
20
--50
--25
0
25
50
75
100
125
150
IT01023
IT01022
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
GS
| yfs | -- I
V
(off) -- Tc
D
GS
10
6
5
4
V
=10V
V
=10V
DS
DS
7
5
I
=1mA
D
3
2
Tc= --25°
C
25°C
1.0
3
2
1
7
5
75°C
3
2
0.1
0
--50
2
3
5
7
2
3
5
7
--25
0
25
50
75
100
125
150
0.1
1.0
10
Drain Current, I -- A
IT01024
Case Temperature, Tc -- °C
IT01025
D
I
S
-- V
SW Time -- I
D
SD
100
100
7
V
=0V
V
V
=200V
GS
DD
=15V
5
7
5
3
GS
2
t (off)
d
10
7
5
3
3
2
t
f
2
t (on)
d
1.0
t
7
5
3
r
10
2
7
5
0.1
7
5
3
2
3
2
0.01
7
5
3
2
1.0
0.001
0
0.3
0.6
0.9
1.2
1.5
IT01026
5
7
2
3
5
1.0
Diode Forward Voltage, V
SD
-- V
IT01027
Drain Current, I -- A
D
No. A1320-3/5
2SK2624FS
Ciss, Coss, Crss -- V
DS
A S O
1000
3
2
f=1MHz
I
I
=12A
PW≤10μs
7
Ciss
DP
10
5
7
5
=3.5A
D
3
2
3
2
Coss
Crss
1.0
7
5
100
3
2
7
5
Operation in
this area is
0.1
limited by R (on).
3
2
7
5
DS
3
2
Tc=25°C
Single pulse
0.01
0.1
10
0
5
10
15
20
25
30
IT01028
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
1.0
10
100
1000
IT14035
Drain-to-Source Voltage, V
DS
-- V
Drain-to-Source Voltage, V -- V
DS
P
-- Ta
P
-- Tc
D
D
2.5
2.0
1.5
1.0
30
25
20
15
10
0.5
0
5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
IT01031
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
IT01030
E
-- Ta
AS
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta -- °C
No. A1320-4/5
2SK2624FS
Note on usage : Since the 2SK2624FS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1320-5/5
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