2SK2628FG [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用
| 型号： | 2SK2628FG |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总6页 (文件大小：321K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1322
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK2628FG
Features
•
Low ON-reisitance.
•
Low Qg.
•
Ultrahigh-speed switching.
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
600
±30
7
DSS
V
V
GSS
*1
I
Limited only by maximum temperature
A
Dc
Drain Current (DC)
I
*2
Tc=25 C (SANYO’s ideal heat dissipation condition)*3
6.2
24
A
°
Dpack
Drain Current (Pulse)
Allowable Power Dissipation
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
2.0
35
W
W
P
D
Tc=25 C (SANYO s ideal heat dissipation condition)*3
°
’
Channel Temperature
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
E
98
6
mJ
A
AS
I
AV
Note : 1 Shows chip capability
*
2 Package limited
*
3 SANYO’s condition is radiation from backside.
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
4 V =50V, L=5mH, I =6A
*
DD
AV
5 L 5mH, Single pulse
*
≤
Marking : K2628
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
No. A1322-1/6
O2208QB MS IM TC-00001662
2SK2628FG
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
600
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=10mA, V =0V
V
mA
nA
V
(BR)DSS
D GS
I
V
=480V, V =0V
1.0
DSS
DS GS
I
V
=±30V, V =0V
±100
5.5
GSS
(off)
GS DS
V
V
=10V, I =1mA
3.5
2.0
GS
| yfs |
(on)
DS
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
V
=10V, I =4A
D
4.0
S
DS
R
I
=2A, V =15V
0.9
1050
320
180
23
1.1
Ω
DS
D GS
Ciss
Coss
Crss
V
=20V, f=1MHz
=20V, f=1MHz
=20V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
nC
V
DS
Output Capacitance
V
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
V
DS
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
d
r
Rise Time
35
Turn-OFF Delay Time
(off)
90
d
f
Fall Time
35
Total Gate Charge
Qg
V
=200V, V =10V, I =6A
GS
30
DS
D
Diode Forward Voltage
V
I =6A, V =0V
S
0.85
1.2
SD
GS
Package Dimensions
unit : mm (typ)
7529-001
4.7
10.16
3.18
2.54
A
2.76
1.47 MAX
0.8
DETAIL-A
(0.84)
1
2
3
0.5
1 : Gate
FRAME
2 : Drain
3 : Source
EMC
2.54
2.54
SANYO : TO-220F-3SG
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V =200V
DD
L
≥50Ω
RG
I
=4A
D
R =50Ω
L
V
OUT
V
GS
=15V
D
2SK2628FG
PW=1μs
D.C.≤0.5%
15V
0V
V
DD
50Ω
G
R
S
GS
50Ω
P. G
2SK2628FG
No. A1322-2/6
2SK2628FG
For this package, a part of inner electrode is exposed. Please refer to the package outline for the detailedstructure.
So when mounting the device, please pay enough attention to the isolation with the heatsink.
According to the device mounting method, sometimes the insulation voltage may be decreased.
(refer to the below insulation characteristics)
/ Ta=25°C / RH75%
Insulation
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
V
1
2
3
Metal spacer Refer to Fig.1
1600
2100
3900
Vrms
Vrms
Vrms
ISO
Lead & resin insulation *
* : AC voltage measurement
Fig.1
V
ISO
Washer 5.8mm Refer to Fig.2
Insulation screw, Insulated washer
V
ISO
Fig.2
IT14077
IT14078
Insulaton measuring diagram
Insulation voltage tester
AC / 1 s
M3 screw
Washer
Metal spacer
Operating pin
Washer
Lead
Al heatsink
Al heatsink
IT14079
No. A1322-3/6
2SK2628FG
I
D
-- V
DS
I
-- V
D GS
10
9
12
10
8
V
=10V
DS
8
7
6
5
6
4
4
3
7V
2
2
0
1
0
V
=6V
GS
0
2
4
6
8
10
12
16
18 20
IT03675
0
2
4
6
8
10
12
14
Drain-to-Source Voltage, V
DS
-- V
Gate-to-Source Voltage, V
-- V
IT03674
GS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
1.4
1.3
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
Tc=25°C
I
=6A
D
4A
2A
0.9
0.8
0.5
0
0
2
4
6
8
10
12
14
16
18
20
--50
--25
0
25
50
75
100
125
150
Case Temperature, Tc -- °C
Gate-to-Source Voltage, V
-- V
IT03676
IT03677
GS
| yfs | -- I
I
-- V
D
S SD
10
7
3
2
V
=0V
V
=10V
GS
DS
10
7
5
5
3
2
3
2
1.0
7
5
3
2
1.0
7
0.1
7
5
5
3
2
3
2
0.01
7
5
3
2
0.001
0.1
2
3
5
7
2
3
5
7
2
0
0.3
0.6
0.9
1.2
1.5
IT03679
0.1
1.0
10
Drain Current, I -- A
IT03678
Diode Forward Voltage, V
-- V
D
SD
V
GS
-- Qg
Ciss, Coss, Crss -- V
DS
3
10
8
f=1MHz
V
=200V
DS
=6A
2
I
D
1000
7
5
6
3
2
4
2
0
100
7
5
0
5
10
15
20
25
30
IT03680
0
5
10
15
20
25
30
IT03681
Drain-to-Source Voltage, V
DS
-- V
Total Gate Charge, Qg -- nC
No. A1322-4/6
2SK2628FG
SW Time -- I
A S O
D
1000
5
V
=200V
I
=24A
PW≤10μs
DD
DP
3
2
7
5
10
I
I
=7A
=6.2A
DC
7
5
3
2
Dpack
3
2
1.0
7
5
100
7
5
3
2
Operation in this area
is limited by R (on).
DS
0.1
7
5
3
2
3
2
t (on)
d
Tc=25°C
Single pulse
0.01
0.1
10
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
1000
IT14036
2
3
5
7
2
3
5
7
2
3
1.0
10
1.0
10
100
Drain-to-Source Voltage, V
DS
-- V
Drain Current, I -- A
IT03682
D
P
-- Ta
P
-- Tc
D
D
2.5
2.0
1.5
1.0
40
35
30
25
20
15
10
0.5
0
5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT03684
Case Temperature, Tc -- °C
IT03685
E
-- Ta
AS
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta -- °C
No. A1322-5/6
2SK2628FG
Note on usage : Since the 2SK2628FG is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1322-6/6
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