2SK2628ALS [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device; N沟道MOSFET硅通用开关设备
| 型号： | 2SK2628ALS |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 文件： | 总5页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0363A
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK2628ALS
Features
• Low ON-resistance.
• Low Qg.
• Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
600
±30
7
DSS
GSS
Gate-to-Source Voltage
V
V
I
*1
Limited only by maximum temperature
SANYO’s ideal heat dissipation condition
PW≤10µs, duty cycle≤1%
A
Dc
Drain Current (DC)
I
*2
6.2
24
A
Dpack
Drain Current (Pulse)
Allowable Power Dissipation
I
A
DP
2.0
35
W
W
°C
°C
mJ
A
P
D
Tc=25°C (SANYO’s ideal heat dissipation condition)
Channel Temperature
Storage Temperature
Tch
150
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *3
Avalanche Current *4
E
98
6
AS
I
AV
*1 Shows chip capability
*2 Package limited
*3 V =50V, L=5mH, I =6A
DD
AV
*4 L≤5mH, single pulse
Marking : K2628
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21407 TI IM TC-00000531 / 72006QB MS IM TC-00000025 No. A0363-1/5
2SK2628ALS
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
600
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
V
mA
nA
V
(BR)DSS
D GS
I
V
V
V
V
=600V, V =0V
GS
1.0
DSS
DS
GS
DS
DS
I
=±30V, V =0V
DS
±100
GSS
V
(off)
GS
=10V, I =1mA
3.5
2.0
5.5
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
yfs
=10V, I =4A
4.0
S
D
R
DS
(on)
I
=2A, V =15V
0.9
1050
320
180
30
1.1
Ω
D GS
Ciss
Coss
Crss
Qg
V
V
V
V
=20V, f=1MHz
=20V, f=1MHz
=20V, f=1MHz
pF
pF
pF
nC
ns
ns
ns
ns
V
DS
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
=200V, V =10V, I =6A
GS
D
Turn-ON Delay Time
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
23
Rise Time
t
r
35
Turn-OFF Delay Time
Fall Time
t (off)
d
90
t
35
f
Diode Forward Voltage
V
SD
I =6A, V =0V
S GS
0.85
1.2
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7509-002
PW=1µs
D.C.≤0.5%
V
=200V
DD
4.5
10.0
3.2
I
=4A
D
2.8
R =50Ω
L
V
=15V
GS
V
OUT
D
G
0.9
1.2
S
1.2
0.7
2SK2628ALS
R
GS
=50Ω
P. G
0.75
1 : Gate
1
2
3
2 : Drain
3 : Source
2.55
2.55
SANYO : TO-220FI(LS)
Avalanche Resistance Test Circuit
L
≥50Ω
RG
2SK2628ALS
15V
0V
V
50Ω
DD
No. A0363-2/5
2SK2628ALS
I
-- V
I
-- V
D
DS
D
GS
10
9
12
10
8
V
=10V
DS
8
7
6
5
6
4
4
3
7V
2
2
0
1
0
V
=6V
GS
0
2
4
6
8
10
12
16
18 20
IT03675
0
2
4
6
8
10
12
14
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
-- V
GS
IT03674
DS
R
(on) -- V
R
DS
(on) -- Tc
DS
GS
1.4
1.3
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
Tc=25°C
I =6A
D
4A
2A
0.9
0.8
0.5
0
0
2
4
6
8
10
12
14
16
18
20
--50
--25
0
25
50
75
100
125
150
Case Temperature, Tc -- °C
Gate-to-Source Voltage, V
-- V
IT03676
IT03677
GS
y
fs -- I
I
-- V
S SD
D
10
3
2
V
=10V
V
=0V
DS
GS
7
5
10
7
5
3
2
3
2
1.0
7
5
3
2
1.0
0.1
7
5
7
5
3
2
3
2
0.01
7
5
3
2
0.001
0.1
0.1
2
3
5
7
2
3
5
7
2
0
0.3
0.6
0.9
1.2
1.5
IT03679
1.0
10
Drain Current, I -- A
IT03678
Diode Forward Voltage, V
-- V
-- Qg SD
D
V
Ciss, Coss, Crss -- V
GS
DS
3
10
8
f=1MHz
V
=200V
DS
2
I =6A
D
1000
7
5
6
3
2
4
2
0
100
7
5
0
5
10
15
20
25
30
IT03680
0
5
10
15
20
25
30
IT03681
Drain-to-Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
DS
No. A0363-3/5
2SK2628ALS
SW Time -- I
A S O
D
1000
5
V
=200V
I
=24A
DP
PW≤10µs
DD
3
2
7
5
I
(*1)=7A
10
7
5
Dc
3
2
I
(*2)=6.2A
Dpack
3
2
1.0
7
5
100
Operation in this area
is limited by R (on).
7
5
3
2
DS
0.1
3
2
7
5
t (on)
d
3
2
Tc=25°C
Single pulse
*1. Shows chip capability
*2. SANYO’s ideal heat dissipation condition
0.01
1.0
10
0.1
2
3
5
7
2
3
5
7
2
3
5 7
1000
IT10852
2
3
5
7
2
3
5
7
2
3
1.0
10
10
100
Drain-to-Source Voltage, V
DS
-- V
Drain Current, I -- A
IT03682
D
P
-- Ta
P
-- Tc
D
D
2.5
2.0
1.5
1.0
40
35
30
25
20
15
10
0.5
0
5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT03684
Case Temperature, Tc -- °C
IT03685
E
-- Ta
AS
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta -- °C
No. A0363-4/5
2SK2628ALS
Note on usage : Since the 2SK2628ALS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0363-5/5
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