AP01CVO [SANKEN]
Rectifier Diode, 1 Element, 0.2A, Silicon;
| 型号： | AP01CVO |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Rectifier Diode, 1 Element, 0.2A, Silicon 整流二极管 |
| 文件： | 总1页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Fast-Recovery Rectifier Diodes
Electrical Characteristics (Ta =25°C)
Absolute Maximum Ratings
Others
Mass
Parameter
IFSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
Tstg
VF
(V)
IR
(µA)
IR
(µA)
trr trr
(H)
➀
➁
Rth (j-
(°C/ W)
22.0
)
(°C) (°C)
(ns)
IF
(mA)
(ns)
IF
VRM
(V)
IF (AV)
(A)
Fig.
Type No.
VR =VRM
max
VR =VRM
100°C max
IF
(A)
/
IRP
/
IRP
max
(g)
Ta
=
(mA)
A
B
1000
1000
100
5
500
0.13
AP01C
EP01C
0.2
5
4.0 0.2
200 100/100
100/200
–40 to +150
80
50
20.0
0.2
AP01C
VF —IF Characteristics (Typical)
IFMS Rating
Ta —IF(AV) Derating
1
5
4
3
0.2
0.15
0.1
50
20ms
3.0 t 50µCu
P.C.B. t 1.6
0.1
=
T
a
150ºC
100ºC
25ºC
2
1
0.01
0.05
0
0.001
0
0
1
1.0
2.0
3.0
4.0
5
10
50
0
25
50
75
100
125 150
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
EP01C
VF —IF Characteristics (Typical)
IFMS Rating
Ta —IF(AV) Derating
5
4
3
10
1
0.2
0.15
0.1
L=10mm
L=10mm
20ms
Solder
10mm
Copper Foil
P.C.B
180• 100• 1.6t
=
T
a
150ºC
100ºC
70ºC
0.1
0.01
25ºC
2
1
0.05
0
0.001
0
0
1
2.0
4.0
6.0
8.0
10.0
5
10
50
0
25
50
75
100
125 150
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
External Dimensions
Fig.
A
Fig.
B
(Unit: mm)
0.57 ±0.02
0.6±0.05
Flammability:
UL94V-0 or Equivalent
Cathode Mark
Cathode Mark
2.4±0.1
2.7±0.2
38
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Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
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