2SK3332_技术文档

Bulletin No.

T03EB0

(Nov., 2000)

MOS FET

CAUTION / WARNING

• The information in this publication has been carefully checked and is believed to be

accurate; however, no responsibility is assumed for inaccuracies.

• Sanken reserves the right to make changes without further notice to any products herein

in the interest of improvements in the performance, reliability, or manufacturability of its

products. Before placing an order, Sanken advises its customers to obtain the latest

version of the relevant information to verify that the information being relied upon is

current.

• Application and operation examples described in this catalog are quoted for the sole

purpose of reference for the use of the products herein and Sanken can assume no

responsibility for any infringement of industrial property rights, intellectual property rights

or any other rights of Sanken or any third party which may result from its use.

• When using the products herein, the applicability and suitability of such products for the

intended purpose or object shall be reviewed at the users responsibility.

• Although Sanken undertakes to enhance the quality and reliability of its products, the

occurrence of failure and defect of semiconductor products at a certain rate is inevitable.

Users of Sanken products are requested to take, at their own risk, preventative measures

including safety design of the equipment or systems against any possible injury, death,

fires or damages to the society due to device failure or malfunction.

• Sanken products listed in this catalog are designed and intended for the use as

components in general purpose electronic equipment or apparatus (home appliances,

office equipment, telecommunication equipment, measuring equipment, etc.).

Before placing an order, the user’s written consent to the specifications is requested.

• When considering the use of Sanken products in the applications where higher reliability

is required (transportation equipment and its control systems, traffic signal control

systems or equipment, fire/crime alarm systems, various safety devices, etc.), please

contact your nearest Sanken sales representative to discuss and obtain written

confirmation of your specifications.

• The use of Sanken products without the written consent of Sanken in the applications

where extremely high reliability is required (aerospace equipment, nuclear power control

systems, life support systems, etc.) is strictly prohibited.

• Anti radioactive ray design is not considered for the products listed herein.

• This publication shall not be reproduced in whole or in part without prior written approval

from Sanken.

Standard Minimum Packaged Quantity

Specify the number of standard minimum

packaged units when placing order.

Series

FM20

Standard Minimum package Unit

100

105

FM100

Contents

Storage, characteristic inspection, and handling precautions .. 2

External dimensions .................................................. 3

Avalanche energy capability ....................................... 4

Avalanche energy capability measuring method ............ 5

Product index by part number .................................... 6

Selection guide......................................................... 7

2SK1177 ......................................... 8

2SK1178 ......................................... 9

2SK1179 ........................................ 10

2SK1180 ........................................ 11

2SK1181 ........................................ 12

2SK1183 ........................................ 13

2SK1184 ........................................ 14

2SK1185 ........................................ 15

2SK1186 ........................................ 16

2SK1187 ........................................ 17

2SK1188 ........................................ 18

2SK1189 ........................................ 19

2SK1190 ........................................ 20

2SK1191 ........................................ 21

2SK1192 ........................................ 22

2SK1712 ........................................ 23

Nch

........................................ 24

........................................ 25

........................................ 26

........................................ 27

........................................ 28

........................................ 29

........................................ 30

........................................ 31

........................................ 32

........................................ 33

........................................ 34

........................................ 35

........................................ 36

........................................ 37

........................................ 38

........................................ 39

........................................ 40

........................................ 41

........................................ 42

........................................ 43

2SK2419

2SK2420

2SK2421

2SK2701

2SK2702

2SK2703

2SK2704

2SK2705

2SK2706

2SK2707

2SK2708

2SK2709

2SK2710

2SK2778

2SK2779

2SK2803

2SK2805

2SK2848

2SK2943

2SK2945

2SK3002 ........................................ 44

2SK3003 ........................................ 45

2SK3004 ........................................ 46

2SK3199 ........................................ 47

2SK3200 ........................................ 48

2SK3332 ........................................ 49

2SK3460 ........................................ 50

FKV550T ........................................ 51

2SJ424 .......................................... 52

2SJ425 .......................................... 53

Pch

Discontinued part guide

........................................... 54

1

Storage, characteristic inspection, and handling precautions

Inappropriate storage, characteristic inspection, or

5. Soldering temperature

handling may impair the reliability of the device. To ensure

high reliability, observe the following precautions:

If soldering is necessary, take care to keep the applica-

tion of heat as brief as possible, and within the following

limits:

1. Storage precautions

260±5ºC for 10 s max

It is recommended to store the device at room temper-

•

350ºC for 3 s max (soldering iron)

ature (between 5 and 35°C) and relative humidity at 40 to

75% . Avoid storing the device in a place where the

temperature or humidity is high or changes greatly.

6. Heatsink

Store the device in a clean place that is not exposed to

A large contact area between the device and the

heatsink for effective heat radiation is required. To ensure

a large contact area, minimize mounting holes and select a

heatsink with a sufficiently smooth surface and that is free

from burring or metal debris.

•

direct sunlight, and is free from corrosive or harmful

gases.

If the device is stored for a long time, check the solder-

•

ability and lead condition before using the device.

2. Precautions on characteristic inspections

7. Handling precautions to protect power

MOS FET from static damage

When carrying out characteristic inspections on re-

ceiving products or other occasions, take care to avoid

applying a surge voltage from the measuring equipment

and check the terminals of the measuring equipment for a

short circuit or wiring errors. Measure the device within the

range of its rated values.

When handling the device, physical grounding is neces-

•

sary. Wear a wrist strap with a 1 MΩ resistor close to the

body in the wrist strap to prevent electric shock.

Use a conductive table mat or floor mat at the device

•

handling workbench and to ensure grounding.

When using a curve tracer or other measuring equip-

•

ment, ground the equipment as well.

3. Silicone Grease

When soldering, ground the bit of the soldering iron and

•

When attaching heatsink, apply a small amount of

silicone evenly to the back of the device and both sides of

the insulator to reduce the thermal resistance between the

device and heatsink.

the dip tank to prevent a leakage voltage from damaging

the device.

Store the device in the shipping container or a conduc-

•

tive container or use aluminum foil to protect the device

from static electricity.

Recommended silicone grease

G746

SHINETSU SILICONE CO., LTD.

•

YG6260 GE TOSHIBA SILICONE CO., LTD.

8. Load on Leads

SC102 DOW CORNING TORAY SILICONE CO., LTD.

When excessive load is exerted on leads, internal

connections may be break. Load exerted in each of the

following directions should be limited to below 1 kg for

TO-220F and 2.5 kg for TO-3PF.

Please select a silicone grease carefully since the oil in

some grease can penetrate the product, which will

result in an extremely short product life.

4. Screw tightening torque

If screws are not tightened with sufficient torque, this

can increase the thermal resistance and reduce the

radiation effect. Tightening screws with too great a torque

damage the screw thread, deform the heatsink, or twist the

device frame until it is damaged. There, tighten screws with

a torque as shown below (Table 1).

Table 1: Screw Tightening Torque

Directions in which load is exerted on leads

Package

TO-220F

TO-3PF

Tightening Torque

9. Lead Forming

0.490 to 0.686 N•m (5 to 7 kgf• cm)

0.686 to 0.822 N•m (7 to 9 kgf• cm)

We make several types of lead forming available, please

consult with our personnel when necessary.

2

External dimensions (Unit: mm)

1 FM20 (TO-220F)

UL approved product

General product

4.2^±0.2

2.8

φ

3.3

10.0^±0.2

4.2^±0.2

2.8

φ

10.0^±0.2

±0.2

3.3

C 0.5

a

b

a

b

1.35^±0.15

0.85⁺^–0⁰^.^.¹²

1.35 ^±0.15

+0.2

–0.1

0.85

+0.2

–0.1

2.4^±0.2

2.54 0.45 ^–0.1

2.54

0.45

2.4^±0.2

2.54

2.2 ^±0.2

G

D

S

G

D S

a: Part Number

b: Lot Number

Weight: Approx 2.0g

2

FM100 (TO-3PF)

UL approved product

General product

5.5^±0.2

±0.1

5.5 ^±0.2

15.6 ^±0.2

±0.2

15.6 ^±0.2

φ

3.3

φ

3.3

3.45^±0.2

3.45 ^±0.2

a

b

1.75 ^±0.15

0.8

2.15 ^±0.15

+0.2

–0.1

1.05

–0.1

1.05

+0.2

–0.1

0.65

+0.2

5.45 ^±0.1

5.45 ^±0.10.65

–0.1

3.35 ^±0.2

5.45 ^±0.1

3.35 ^±0.2

1.5 4.4 1.5

G

D

S

G

D

S

a: Part Number

b: Lot Number

Weight: Approx 6.5g

3

Sanken MOS FETs feature guaranteed

avalanche energy capability.

Avalanche energy capability of MOS FET

1. What is avalanche energy capability ?

3. Temperature derating for E_AS

When a MOS FET is used for high-speed switching, the

inductive load and wiring inductance may cause a counter

electromotive voltage at cutoff that the device cannot

withstand.

The EAS Value in the specifications is guaranteed when

the channel temperature Tch is 25ºC. Since the EAS Value

drops as the channel temperature rises, derating

depending on the temperature is necessary.

Avalanche energy capability is the non-clamped ability

to withstand damage expressed as energy. As long as the

energy applied to the device at cutoff is within the

guaranteed avalanche energy capability, the device will not

be damaged even if the Drain-Source voltage exceeds the

capability.

Fig.B shows the derating curve for single avalanche

energy capability. This is the derating curve of EAS and the

channel temperature (Tch (start)) immediately before the

avalanche occurs in the product, with the EAS value

(maximum rating) at 25ºC as 100% .

For example, if the product temperature is 50ºC, the EAS

value is derated to 64% of the value at 25ºC.

For example, a Drain-Source voltage that is within the

guaranteed capability when electrically stationary may

exceed the limit at startup or cutoff. Usually, a snubber

circuit or similar surge absorbing circuit is used to keep the

Drain-Source voltage within the guaranteed capability.

Sanken MOS FETs, however, do not require this kind of

protective circuit because the avalanche energy capability

is guaranteed. Sanken MOS FETs enable the number of

parts to be reduced, saving board area.

Fig. B

E_AS— Tch (start)

I_Lp= I_Dmax

100

80

60

40

* Consult the engineering department of Sanken when

planning to use MOS FETs in avalanche mode.

20

0

2. E_AScalculation method

If the current in an inductive load L is I_LPat the moment

when the MOS FET is cut off, E_AScan be expressed as

follows:

25

50

75

100

125

150

Tch (start) (ºC)

V_DSS

V_DSS– V_DD

1

2

...........................

2

E_AS

=

• L • I_Lp•

1

4. Continuous avalanche energy capability

* V_DD: Supply voltage

If the value of L is not known in an actual circuit, E_AS

can also be calculated from the actual voltage and current

This section explains the derating method for continu-

ous avalanche.

waveforms as follows:

Considering continuous avalanche as the repetition of a

single avalanche, the safe operating area (SOA) is deter-

mined using the derating curve shown in Fig. B.

Calculate the energy and Tch (start) of avalanche in the

worst condition and determine SOA using the calculated

data and the derating curve shown in Fig.B. The tempera-

ture rise due to avalanche should not cause the channel

temperature to exceed the maximum rating.

............................................................

2

E_AS= Ps • t

* Ps: Surge power * t: Surge time

The following calculation is used to determine E_AS

where the voltage and current shown in Fig.A are applied

to the MOS FET in a circuit.

Integrate the overlapping section of I_Dand V_DSto calcu-

late I_D• V_DS• dt. When the I_Dwaveform is triangular, E_AS

∫

will be as follows:

1

The following is an example of determining SOA judg-

ment by calculation when a MOS FET enters a transient

avalanche state at power-on then changes to a stationary

state.

E_AS

=

• 10(A) • 550(V) • 10(µs) = 27.5 (mJ)

2

Fig. A

10A

Supposing that the waveform is as shown in Fig.C until

the MOS FET changes to the stationary state, calculate the

start loss and switching (turn-on/off) Ioss. To simplify the

calculation, the average loss Pa and the last two wave-

forms are used for approximation. (Fig. D)

I_D

0

550V

(V_DSS

First, calculate the channel temperature Tch ( ) at time

( ) where the temperature condition is severest.

If the Tch ( ) value is within the maximum rating, there

is no problem as far as the temperature is concerned.

)

V_DS

0

10µs

4

Tch ( ) = Ta + Pa • rch-c (Tn +T+t₁+ t₂+ t₃)

+ (P₁–Pa) • rch-c (T+t₁+ t₂+ t₃)

– (P₁– P₂) • rch-c (T+t₂+ t₃)

Tch ( ₁) = Ta + Pa • rch-c (Tn +T' +t₁+ t ₂+ t ₃)

+ (P₁–Pa) • rch-c (T' +t₁+ t ₂+ t ₃)

– (P₁– P₂) • rch-c (T '+t₂+ t ₃)

+ (P₃– P₂) • rch-c (T+t₃)

+ (P₃– P₂) • rch-c (T' +t₃)

– P₃• rch-c (T) +P₄• rch-c (t₄+ t₅+ t₆)

– (P₄– P₅) • rch-c (t₅+ t ₆)

+ (P₆– P₅) • rch-c (t₆)

– P₃• rch-c (T') +P₄• rch-c (t₄+ t ₅+ t ₆)

– (P₄– P₅) • rch-c (t₅+ t ₆)

+ (P₆– P₅) • rch-c (t₆)

......................................

3

4

Ta

: Ambient temperature

*

This Tch ( ₁) value becomes Tch (start). If the avalanche

energy (EAS = P ₆• t₆) is within the value derated from the

guaranteed EAS value at the temperature, there is no

problem as far as the avalanche energy is concerned.

rch-c (t): Transient thermal resistance at pulse width t

Then calculate the channel temperature Tch ( ₁) imme-

diately before avalanche.

Transient Stationary

Fig. C

Fig. D

P₆

P₃

P₁

P₄

PP₂

P₅

Pa

V

DS

0

I_D

T(n)

t₁tt₂t₃

t₄t₅t₆

T

T'

0

T(n)

1

Avalanche in this section

Avalanche energy capability measuring method

Fig. 1

V

1

2

(BR) DSS

2

E_AS

=

• L • I_Lp

•

V

– V_DD

(BR) DSS

L

V_{(BR) DSS}

I_L

V_DS

I_Lp

I_L

R_G

V_DS

V_DD

V_GS

0V

V_DD

(b) Output waveform

(a) Measuring circuit

Switching time measuring method

Fig. 2

Nch

(a) Measuring circuit

(b) Input-output waveform

R_L

90%

V_GS

I_D

V_DS

10%

90%

V_DD

V_GS

0V

R_G

V_DS

10%

t_{d (on)}

t_{d (off)}

t_f

t_r

=

P.W. 10µs

Duty cycle 1%

t_on

t_off

Fig. 3

P ch

R_L

10%

V_GS

I_D

V_DS

90%

10%

V_DD

0V

R_G

V_DS

V_GS

90%

t_{d (on)}

t_{d (off)}

t_f

t_r

=

P.W. 10µs

Duty cycle < 1%

t_on

t_off

5

Product index by part number

Absolute maximum ratings

Electrical Characteristics (Ta=25ºC)

Parameter

P

R

max

DS(ON)

Ciss

(typ)

D

V

DSS

I

E

AS

Package

Page

D

(Tc =25ºC)

(W)

25

30

35

85

25

30

25

30

35

25

30

35

40

90

30

35

40

35

75

40

75

85

35

40

85

30

35

30

80

30

35

30

35

30

35

30

35

(V =10V)

GS

Part Number

(V)

–60

500

200

100

60

(A)

5

(mJ)

—

(Ω)

0.5

(pF)

270

✽

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

52

53

8

2SJ424

8

—

0.28

3.0

580

2SJ425

2.5

200

260

400

500

660

36

350

2SK1177

2SK1178

2SK1179

2SK1180

2SK1181

2SK1183

2SK1184

2SK1185

2SK1186

2SK1187

2SK1188

2SK1189

2SK1190

2SK1191

2SK1192

2SK1712

2SK2419

2SK2420

2SK2421

2SK2701

2SK2702

2SK2703

2SK2704

2SK2705

2SK2706

2SK2707

2SK2708

2SK2709

2SK2710

2SK2778

2SK2779

2SK2803

2SK2805

2SK2848

2SK2943

2SK2945

2SK3002

2SK3003

2SK3004

2SK3199

2SK3200

2SK3332

2SK3460

FKV550T

4.0

8.5

1.5

610

9

0.85

0.6

1300

1800

2700

140

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

10

13

3

0.4

1.5

5

67

0.8

260

5

16

0.54

0.27

0.16

0.2

180

9

32

350

12

10

15

22

30

40

15

25

30

40

7

58

650

2.1

6.2

17

300

60

0.1

640

60

0.05

0.028

0.1

1300

2500

820

60

38

60

6.2

60

26

38

0.037

0.028

0.02

1.1

1300

2200

2400

720

60

450

600

100

450

600

900

200

250

500

150

50

130

300

400

700

50

✽

10

13

18

0.8

1000

1300

2500

560

0.8

0.57

0.3

4.5

1.85

1.1

7

150

300

400

70

950

✽

8.5

0.85

0.55

0.175

0.08

2.8

1200

1900

740

12

20

3

200

30

1630

340

✽

15

2

550

10

0.38

3.8

2100

290

3

60

5.0

600

5

120

55

3.0

880

8

0.35

0.175

0.25

1.5

450

18

5

120

35

850

650

10

12

18

50

1.1

920

100

180

150

0.2

870

0.095

0.013

1900

2700

✽ : Under development

: UL recognized parts are available (File No. 117753). Each UL recognized parts is marked with a I , following its product number.

6

Selection Guide

✽Nch MOS FET

✽Pch MOS FET

V

DSS

I

R

V

DSS

I

R

DS (ON)

D

DS (ON)

D

Part Number

Package

Page

Part Number

Package

Page

(V)

(A)

(Ω) max

(V)

(A)

(Ω) max

50

13m

0.2

Ω

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

51

18

19

23

20

24

21

25

22

26

15

16

17

37

38

49

50

13

14

44

45

46

39

27

28

29

30

31

40

32

8

5

0.5

FM20

52

53

FKV550T

2SK1188

2SK1189

2SK1712

2SK1190

2SK2419

2SK1191

2SK2420

2SK1192

2SK2421

2SK1185

2SK1186

2SK1187

2SK2778

2SK2779

2SK3332

2SK3460

2SK1183

2SK1184

2SK3002

2SK3003

2SK3004

2SK2803

2SK2701

2SK2702

2SK2703

2SK2704

2SK2705

2SK2805

2SK2706

2SK1177

2SK1178

2SK3199

2SK1179

2SK1180

2SK3200

2SK1181

2SK2848

2SK2707

2SK2708

2SK2709

2SK2710

2SK2943

2SK2945

2SJ424

2SJ425

– 60

10

15

22

25

30

40

5

8

0.28

0.1

✽

50m

37m

28m

20m

Ω

60

0.54

0.27

0.16

0.175

9

100

150

12

20

12

18

3

✽

80m

0.2

Ω

0.095

1.5

5

0.8

200

250

8

0.35

0.175

0.25

2.8

18

3

7

1.1

10

13

15

18

0.8

450

0.57

0.38

0.3

2.5

3

4

1.5

9

5

1.5

47

10

11

48

12

41

33

34

35

36

42

43

500

8.5

0.85

0.6

10

13

2

1.1

0.4

3.8

4.5

1.85

1.1

600

900

7

8.5

0.85

0.55

5.0

12

3

5

3.0

: Logic drive

✽

7

2SK1177

Absolute Maximum Ratings

External dimensions

1......FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V_DSS

V_GSS

I_D

500

±20

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

I_GSS

±500

250

4.0

±2.5

A

I_DSS

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 1.4A

V_GS= 10V, I_D= 1.4A

I_{D (pulse)}

P_D

±10 (Tch 150ºC)

30 (Tc = 25ºC)

200

A

V_TH

2.0

1.5

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

2.3

2.6

350

54

S

E_AS

3.0

Ω

*

Tch

150

pF

ns

V_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 1.4A, V_DD= 250V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 50V, L = 60mH, I = 2.5A, unclamped,

DD

L

50

*

See Figure 1 on Page 5.

t_off

140

I_D– V_DSCharacteristics (typical)

I_D–V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

3.0

5

=

V_DS10V

=

V_GS10V

10V

4

3

2

2.0

1.0

0

5.5V

1.0

5V

V_GS4.5V

=

–

T_C

55ºC

1

0

25ºC

=

125ºC

0

10

20

0

2

4

6

8

10

0

1.0

2.0

3.0

150

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

6

=

V_DS10V

=

I_D1.5A

=

5

4

3

2

V_GS10V

5

8

=

I_D2.5A

=

–

T_C

55ºC

25ºC

6

4

125ºC

=

I_D1.5A

1

2

0

1

0

0.5

0.3

0.05 0.1

0.5

1

5

2

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

1000

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

(Tc = 25ºC)

3.0

20

=

V_GS0V

1MHz

I_D(pulse) max

10

30

=

f

Ciss

500

5

I_Dmax

2.0

20

10

100

50

1

Coss

=

V_GS0V

0.5

1.0

0

5V,10V

0.1

10

5

Crss

40

Without heatsink

0

0.03

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

3

5

10

50 100

V_DS(V)

500 1000

V_DS(V)

V_SD(V)

8

2SK1178

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V_DSS

V_GSS

I_D

500

±20

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

I_GSS

±500

250

4.0

±4.0

A

I_DSS

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 2.0A

V_GS= 10V, I_D= 2.0A

I_{D (pulse)}

P_D

±16 (Tch 150ºC)

35 (Tc = 25ºC)

260

A

V_TH

2.0

2.4

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

3.7

1.3

610

91

S

E_AS

1.5

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 2.0A, V_DD= 250V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 50V, L = 28mH, I = 4.0A, unclamped,

DD

L

50

*

See Figure 1 on Page 5.

t_off

120

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

2.0

5

=

V_DS10V

=

V_GS10V

4

3

2

10V

6V

1.5

5.5V

3

1.0

0.5

0

2

5V

=

–

T_C

55ºC

1

0

25ºC

=

V_GS4.5V

125ºC

0

10

20

0

2

4

6

8

10

0

1

2

3

4

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

5

=

V_DS10V

=

I_D2A

=

V_GS10V

=

–

T_C

55ºC

25ºC

4

3

2

5

8

125ºC

=

I_D4A

6

4

1

=

I_D2A

2

0

1

0

0.5

0.3

150

0.05 0.1

0.5

1

5

2

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance

3000

–

V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

5

Safe Operating Area

50

P

_D– Ta Characteristics

40

(Tc = 25ºC)

=

V_GS0V

=

f

1MHz

I_D(pulse) max

10

1000

500

4

3

2

Ciss

30

20

10

5

I_Dmax

1

100

50

Coss

=

V_GS0V

0.5

5V,10V

1

0

Crss

40

0.1

Without heatsink

0

10

0.05

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 1000

V_DS(V)

V_SD(V)

9

2SK1179

Absolute Maximum Ratings

External dimensions

2 ...... FM100

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V_DSS

V_GSS

I_D

500

±20

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

I_GSS

±500

250

4.0

±8.5

A

I_DSS

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 4.5A

V_GS= 10V, I_D= 4.5A

I_{D (pulse)}

P_D

±34 (Tch 150ºC)

85 (Tc = 25ºC)

400

A

V_TH

2.0

5.1

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

7.7

0.70

1300

180

60

S

E_AS

0.85

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 4.5A, V_DD= 250V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 50V, L = 10mH, I = 8.5A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

110

I_D– V_DSCharacteristics (typical)

10

I

_D– V_GSCharacteristics (typical)

10

R_{DS (ON)}– I_DCharacteristics (typical)

1.5

=

V_DS10V

=

V_GS10V

10V

8

6

4

2

0

5.5V

1.0

0.5

0

6

4

5V

=

–

T_C

55ºC

2

25ºC

=

V_GS4.5V

125ºC

0

5

10

15

20

0

2

4

6

8

10

0

1

2

3

4

5

6

7

8

9

10

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

20

10

2.0

=

V_DS10V

=

I_D4.5A

=

–

T_C

55ºC

25ºC

10

5

=

V_GS10V

8

1.5

1.0

125ºC

=

I_D8.5A

6

4

=

I_D4.5A

1

0.5

0

2

0

0.5

0.3

0.05 0.1

0.5

1

5

10

2

5

10

20

150

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

10

Safe Operating Area

50

P

_D– Ta Characteristics

90

(Tc = 25ºC)

5000

=

V_GS0V

I_D(pulse) max

80

70

60

50

40

30

20

=

f

1MHz

I_Dmax

10

8

6

Ciss

1000

500

5

1

4

Coss

=

V_GS0V

0.5

100

50

5V,10V

2

0

0.1

Crss

40

10

Without heatsink

20

0.03

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 1000

V_DS(V)

10

2SK1180

Absolute Maximum Ratings

External dimensions

2 ...... FM100

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V_DSS

V_GSS

I_D

500

±20

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

I_GSS

±500

250

4.0

±10

A

I_DSS

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 5.0A

V_GS= 10V, I_D= 5.0A

I_{D (pulse)}

P_D

±40 (Tch 150ºC)

85 (Tc = 25ºC)

500

A

V_TH

2.0

6.1

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

9.2

0.5

S

E_AS

0.6

Ω

*

Tch

150

1800

250

60

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 5A, V_DD= 250V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 50V, L = 9mH, I = 10A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

140

I_D– V_DSCharacteristics (typical)

10

I

_D– V_GSCharacteristics (typical)

10

R_{DS (ON)}– I_DCharacteristics (typical)

1.0

=

V_GS10V

=

10V

V_DS10V

0.8

0.6

8

6

5V

6

4

0.4

0.2

0

4

2

0

4.5V

=

–

T_C

55ºC

2

25ºC

=

V_GS4V

125ºC

0

5

10

15

20

0

2

4

6

8

10

0

1

2

3

4

5

6

7

8

9

10

150

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

20

10

1.4

=

V_DS10V

=

I_D5A

=

–

T_C

55ºC

25ºC

1.2

1.0

0.8

0.6

0.4

0.2

0

10

5

=

V_GS10V

8

125ºC

6

=

I_D10A

4

1

=

I_D5A

2

0

0.5

0.3

0.05 0.1

0.5

1

5

10

2

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

90

(Tc = 25ºC)

5000

10

70

I_D(pulse) max

=

V_GS0V

100

80

70

60

50

40

30

20

=

f

1MHz

Ciss

µ

1m

s

8

6

R^DS

^(ONL⁾IMITED

s

(1shot)

I_Dmax

10

5

1000

500

DC OPERATION

Coss

Crss

4

=

V_GS0V

1

5V,10V

0.5

100

2

0

10

50

30

Without heatsink

0.1

0

10

20

30

40

50

0

0.5

1.0

1.5

5

10

50 100

V_DS(V)

500 1000

0

50

100

Ta (ºC)

V_DS(V)

V_SD(V)

11

2SK1181

Absolute Maximum Ratings

External dimensions

2 ...... FM100

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V_DSS

V_GSS

I_D

500

±20

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

I_GSS

±500

250

4.0

±13

A

I_DSS

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 6.5A

V_GS= 10V, I_D= 6.5A

I_{D (pulse)}

P_D

±52 (Tch 150ºC)

85 (Tc = 25ºC)

660

A

V_TH

2.0

8.5

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

13

0.35

2700

350

65

S

E_AS

0.4

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 6.5A, V_DD= 250V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 50V, L = 7mH, I = 13A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

180

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

14

R_{DS (ON)}– I_DCharacteristics (typical)

0.5

12

=

V_GS10V

=

V_DS10V

10V

12

10

8

0.4

0.3

10

8

5V

6

0.2

0.1

4

=

–

T_C

55ºC

4.5V

2

0

2

25ºC

=

V_GS4 V

125ºC

0

5

10

15

20

0

2

4

6

8

10

0

2

4

6

8

10

12

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

20

10

1.0

=

V_DS10V

=

I_D6.5A

=

–

T_C

55ºC

25ºC

10

5

V_GS10V

8

6

0.8

0.6

0.4

125ºC

=

I_D13A

4

2

0

1

=

I_D8.5A

0.2

0

0.5

0.3

150

0.05 0.1

0.5

1

5

10 20

2

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

14

Safe Operating Area

P

_D– Ta Characteristics

90

(Tc = 25ºC)

10000

100

=

I_D_D(pulse) max

50

V_GS0V

80

70

60

50

40

30

20

=

f

1MHz

5000

12

10

Ciss

I_Dmax

10

1000

500

8

5

=

V_GS0V

6

4

2

0

Coss

1

5V,10V

0.5

100

50

Crss

40

10

Without heatsink

0.1

0

10

20

30

50

0

0.5

1.0

1.5

1

5

10

50 100

V_DS(V)

500 1000

0

50

100

Ta (ºC)

150

V_DS(V)

V_SD(V)

12

2SK1183

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

200

max

V_DSS

V_GSS

I_D

200

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

±20

±3

I_GSS

±500

250

4.0

A

I_DSS

V_DS= 200V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 1.5A

V_GS= 10V, I_D= 1.5A

I_{D (pulse)}

P_D

±12 (Tch 150ºC)

25 (Tc = 25ºC)

30

A

V_TH

2.0

0.8

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

1.2

140

42

S

E_AS

1.5

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 1.5A, V_DD= 100V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 50V, L = 6mH, I = 3.0A, unclamped,

DD

L

35

*

See Figure 1 on Page 5.

t_off

50

I_D– V_DSCharacteristics (typical)

3.0

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

2.0

3.0

=

V_DS10V

10V

=

V_GS10V

2.0

6V

1.0

5.5V

1.0

0

5V

=

–

T_C

55ºC

25ºC

=

V_GS4.5V

125ºC

0

2

4

6

8

10

0

2

4

6

8

10

0

1.0

2.0

3.0

150

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V

_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

4

8

=

V_DS10V

=

I_D1.5A

=

V_GS10V

5

6

3

=

–

T_C

55ºC

25ºC

=

I_D3A

4

2

1

0

125ºC

1

=

I_D1.5A

2

0

0.5

0.3

0.05 0.1

0.5

I_D(A)

1

5

10

20

–50

0

50

100

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

25

(Tc = 25ºC)

500

3.0

20

I_D(pulse) max

=

V_GS0V

10

5

=

f

1MHz

Ciss

20

100

50

2.0

I_Dmax

1

Coss

0.5

10

1.0

10

10V

0.1

Crss

40

Without heatsink

0

5

3

=

V_GS0V

0.05

0.03

5V

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

3

5

10

50 100

V_DS(V)

500

0

50

100

Ta (ºC)

V_DS(V)

13

2SK1184

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

200

max

V_DSS

V_GSS

I_D

200

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

±20

±5

I_GSS

±500

250

4.0

A

I_DSS

V_DS= 200V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 2.5A

V_GS= 10V, I_D= 2.5A

I_{D (pulse)}

P_D

A

V_TH

2.0

1.3

±20 (Tch 150ºC)

30 (Tc = 25ºC)

67

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

2.5

0.5

260

100

50

S

E_AS

0.8

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 2.5A, V_DD= 100V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 50V, L = 4mH, I = 5.0A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

60

I_D– V_DSCharacteristics (typical)

I_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

5

1.0

10V

=

V_GS10V

=

V_DS10V

4

3

0.8

0.6

3

6V

2

0.4

0.2

0

2

1

0

5.5V

=

–

T_C

55ºC

1

5V

25ºC

=

V_GS4.5V

125ºC

0

2

4

6

8

10

0

2

4

6

8

10

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

I_D(A)

V_DS(V)

V_GS(V)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

8

2.0

=

V_DS10V

=

I_D2.5A

=

V_GS10V

5

=

–

T_C

55ºC

25ºC

6

125ºC

1.0

4

=

I_D5A

1

2

0

=

I_D2.5A

0.5

0.3

0

150

0.05 0.1

0.5

1

5

10

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

5

Safe Operating Area

50

P

_D– Ta Characteristics

30

(Tc = 25ºC)

1000

=

V_GS0V

I_D(pulse) max

500

=

f

1MHz

4

3

2

Ciss

10

5

20

10

I_Dmax

100

50

Coss

1

0.5

10V

Crss

40

1

0.1

10

5

Without heatsink

0

=

V_GS0V

5V

0.05

0.03

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

3

5

10

50 100

V_DS(V)

500

0

50

100

Ta (ºC)

150

V_DS(V)

14

2SK1185

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

100

max

V_DSS

V_GSS

I_D

100

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

±20

±5

I_GSS

±500

250

4.0

A

I_DSS

V_DS= 100V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 2.5A

V_GS= 10V, I_D= 2.5A

I_{D (pulse)}

P_D

±20 (Tch 150ºC)

25 (Tc = 25ºC)

16

A

V_TH

2.0

1.5

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

1.7

0.41

180

82

S

E_AS

0.54

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 2.5A, V_DD= 50V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 25V, L = 1mH, I = 5.0A, unclamped,

DD

L

40

*

See Figure 1 on Page 5.

t_off

40

I_D– V_DSCharacteristics (typical)

I_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

5

1.0

5

=

V_DS10V

=

V_GS10V

10V

0.8

0.6

0.4

0.2

0

4

3

6.5V

3

6V

2

1

0

5.5V

=

–

T_C

55ºC

1

5V

25ºC

=

V_GS4.5V

125ºC

0

2

4

6

8

10

0

2

4

6

8

10

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

I_D(A)

V_DS(V)

V_GS(V)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

1.2

=

V_DS10V

=

I_D2.5A

=

6

1.0

0.8

0.6

0.4

V_GS10V

5

=

–

T_C

55ºC

25ºC

125ºC

4

2

0

=

I_D5A

1

=

I_D2.5A

0.2

0

0.5

0.3

150

0.05 0.1

0.5

1

5

10

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

5

Safe Operating Area

50

P

_D– Ta Characteristics

25

(Tc = 25ºC)

1000

=

V_GS0V

I_D(pulse) max

500

=

f

1MHz

20

4

3

2

10

Ciss

I_Dmax

5

100

50

Coss

10

1

10V

5V

0.5

1

Crss

40

=

V_GS0V

10

5

Without heatsink

0

0.1

0.5

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

1

5

10

50 100

V_DS(V)

15

2SK1186

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

100

max

V_DSS

V_GSS

I_D

100

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

±20

±9

I_GSS

±500

250

4.0

A

I_DSS

V_DS= 100V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 4.5A

V_GS= 10V, I_D= 4.5A

I_{D (pulse)}

P_D

A

V_TH

2.0

2.4

±36 (Tch 150ºC)

30 (Tc = 25ºC)

32

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

3.7

0.24

350

130

60

S

E_AS

0.27

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 4.5A, V_DD= 50V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 25V, L = 600µH, I = 9.0A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

40

I_D– V_DSCharacteristics (typical)

10

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

0.4

10

=

V_GS10V

V_DS10V

10V

8

6

0.3

6.5V

6

0.2

0.1

0

6V

4

2

0

4

5.5V

25ºC

125ºC

2

5V

=

–

T_C

55ºC

=

V_GS4.5V

0

2

4

6

8

10

0

2

4

6

8

10

0

1

2

3

4

5

6

7

8

9

10

150

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V

_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

0.5

10

6

4

2

0

=

V_DS10V

=

I_D4.5A

V_GS10V

=

–

T_C

55ºC

25ºC

=

5

0.4

0.3

0.2

0.1

0

125ºC

=

I_D9A

1

=

I_D4.5A

0.5

0.3

0.05 0.1

0.5

1

5

10

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

30

(Tc = 25ºC)

1000

10

50

=

V_GS0V

1MHz

I_D_D(pulse) max

=

f

500

Ciss

8

6

4

I_Dmax

10

20

10

5

Coss

100

50

1

Crss

10V

5V

0.5

2

=

V_GS0V

Without heatsink

0

0.1

0

10

0

10

20

30

40

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0.5

1

5

10

50 100

0

50

100

Ta (ºC)

V_DS(V)

16

2SK1187

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

100

max

V_DSS

V_GSS

I_D

100

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

±20

±12

I_GSS

±500

250

4.0

A

I_DSS

V_DS= 100V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 6.0A

V_GS= 10V, I_D= 6.0A

I_{D (pulse)}

P_D

A

V_TH

2.0

4.4

±48 (Tch 150ºC)

35 (Tc = 25ºC)

58

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

6.5

0.12

650

240

70

S

E_AS

0.16

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 6A, V_DD= 50V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 25V, L = 600µH, I = 12A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

55

I_D– V_DSCharacteristics (typical)

12

I_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

0.2

=

V_DS10V

10V

12

=

V_GS10V

10

8

5.5V

6

0.1

6

4

5V

4

25ºC

125ºC

4.5V

2

0

2

0

=

–

T_C

55ºC

=

V_GS4V

0

2

4

6

8

10

0

2

4

6

8

10

0

2

4

6

8

10

12

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

20

6

0.4

=

V_DS10V

=

I_D6A

=

–

T_C

55ºC

25ºC

10

5

V_GS10V

0.3

0.2

0.1

0

125ºC

4

2

0

=

I_D12A

1

=

I_D6A

0.5

0.3

5

10

20

150

0.05 0.1

0.5

1

5

10 20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

12

Safe Operating Area

P

_D– Ta Characteristics

35

(Tc = 25ºC)

3000

50

I_D(pulse) max

=

V_GS0V

=

f

1MHz

30

20

10

8

I_Dmax

10

1000

500

Ciss

5

6

Coss

Crss

1

4

2

10V

100

50

0.5

=

V_GS0V

5V

Without heatsink

0

0.1

0.5

20

0

10

20

30

40

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

1

5

10

50 100

V_DS(V)

17

2SK1188

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

±20

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

I_GSS

±500

250

4.0

±10

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 5.0A

V_GS= 10V, I_D= 5.0A

±40 (Tch 150ºC)

25 (Tc = 25ºC)

2.1

I_{D (pulse)}

P_D

A

V_TH

2.0

2.2

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

3.3

0.15

300

160

35

S

E_AS

0.2

Ω

*

Tch

150

pF

ns

V_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 5A, V_DD= 30V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 25V, L = 50µH, I = 7.0A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

35

I_D– V_DSCharacteristics (typical)

10

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

0.3

10

=

V_DS10V

=

V_GS10V

10V

7V

8

6

4

2

0

8

0.2

0.1

0

6V

6

4

25ºC

125ºC

5V

2

=

–

T_C

55ºC

=

V_GS4V

0

1

0

2

3

4

5

0

2

4

6

8

10

0

1

2

3

4

5

6

7

8

9

10

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

0.4

=

V_DS10V

=

I_D5 A

=

6

4

V_GS10V

=

–

T_C

55ºC

25ºC

5

0.3

0.2

0.1

0

125ºC

1

2

0

=

I_D10A

0.5

0.3

=

I_D5A

150

0.05 0.1

0.5

1

5

10

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

10

Safe Operating Area

50

P

_D– Ta Characteristics

25

(Tc = 25ºC)

1000

=

V_GS0V

I_D(pulse) max

=

f

1MHz

500

20

8

6

Ciss

I_Dmax

10

Coss

5

100

50

10

4

2

0

10V

1

Crss

0.5

=

V_GS0V

5V

Without heatsink

0

0.1

0.5

10

0

10

20

30

40

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

1

5

10

50 100

V_DS(V)

18

2SK1189

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

±20

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

I_GSS

±500

250

4.0

±15

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 8.0A

V_GS= 10V, I_D= 8.0A

I_{D (pulse)}

P_D

A

V_TH

2.0

4.2

±60 (Tch 150ºC)

30 (Tc = 25ºC)

6.2

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

6.2

0.07

640

350

110

45

S

E_AS

0.1

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 8A, V_DD= 30V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 25V, L = 50µH, I = 12A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

I_D– V_DSCharacteristics (typical)

16

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

0.10

16

=

V_DS10V

=

V_GS10V

10V

14

12

10

7V

0.08

0.06

0.04

0.02

0

12

6V

10

8

6

4

2

0

5.5V

6

25ºC

125ºC

4

=

V_GS5V

=

–

T_C

55ºC

10

2

0

1

2

3

4

5

0

2

4

6

8

0

2

4

6

8

10

12

14

16

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

20

0.14

=

V_DS10V

=

I_D8A

=

–

0.12

0.10

0.08

0.06

0.04

0.02

0

T_C

55ºC

25ºC

3

2

10

5

V_GS10V

125ºC

=

I_D15A

1

0

=

I_D8A

0.5

0.3

150

0.05 0.1

0.5

1

5

10 20

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

30

(Tc = 25ºC)

3000

100

I_D(pulse) max

=

V_GS0V

14

12

10

50

=

f

1MHz

1000

500

Ciss

I_Dmax

10

20

10

Coss

8

10V

5

6

100

50

5V

4

2

1

Crss

40

=

V_GS0V

Without heatsink

0

0.5

0.3

0

20

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100

V_DS(V)

19

2SK1190

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

±20

±22

I_GSS

±500

250

4.0

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 12A

V_GS= 10V, I_D= 12A

I_{D (pulse)}

P_D

±88 (Tch 150ºC)

35 (Tc = 25ºC)

17

A

V_TH

2.0

7.3

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

11

0.04

1300

650

130

60

S

E_AS

0.05

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 12A, V_DD= 30V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 25V, L = 50µH, I = 20A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

I_D– V_DSCharacteristics (typical)

24

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

50

24

=

V_DS10V

=

V_GS10V

5.5V

10V

20

40

30

20

10

0

5V

10

25ºC

125ºC

=

V_GS4.5V

=

–

T_C

55ºC

0

1

2

3

4

5

0

2

4

6

8

10

0

10

20

24

150

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

50

80

=

V_DS10V

=

I_D12A

=

4

=

–

T_C

55ºC

25ºC

V_GS10V

60

40

20

0

125ºC

10

5

3

2

1

=

I_D22A

0.5

0.3

0.05 0.1

=

I_D12A

0

0.5

1

5

10

50

3

5

10

V_GS(V)

20

–50

0

50

100

I_D(A)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

24

Safe Operating Area

P

_D– Ta Characteristics

(Tc = 25ºC)

5000

100

35

I_D(pulse) max

=

V_GS0V

=

50

f

1MHz

30

20

10

20

I_Dmax

Ciss

1000

500

10

5

Coss

Crss

10V

10

5V

=

V_GS0V

100

50

1

Without heatsink

0

0.5

0

10

20

30

40

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

1

5

10

50 100

V_DS(V)

20

2SK1191

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

±20

±30

I_GSS

±500

250

4.0

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 15A

V_GS= 10V, I_D= 15A

I_{D (pulse)}

P_D

A

V_TH

2.0

13

±120 (Tch 150ºC)

40 (Tc = 25ºC)

38

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

20

0.021

2500

1200

180

S

E_AS

0.028

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 15A, V_DD= 30V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 25V, L = 50µH, I = 30A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

120

I_D– V_DSCharacteristics (typical)

30

I

_D– V_GSCharacteristics (typical)

30

R_{DS (ON)}– I_DCharacteristics (typical)

40

=

V_DS10V

10V

=

V_GS10V

30

5.5V

20

10

0

20

10

0

5V

10

=

–

T_C

55ºC

=

V_GS4.5V

25ºC

125ºC

6

0

1

2

3

4

5

0

2

4

8

10

0

10

20

30

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

50

2

40

=

V_DS10V

=

I_D15A

=

–

T_C

55ºC

25ºC

V_GS10V

125ºC

30

20

10

0

10

5

1

0

=

I_D30A

1

=

I_D15A

0.5

0.3

0.05 0.1

150

0.5

1

5

10

50

5

10

20

–50

0

50

Tc (ºC)

100

I_D(A)

V_GS(V)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

30

Safe Operating Area

P

_D– Ta Characteristics

40

(Tc = 25ºC)

10000

200

I_D(pulse) max

=

V_GS0V

100

=

f

1MHz

5000

50

30

20

10

I_Dmax

Ciss

20

10V

Coss

1000

500

10

5

5V

10

Crss

40

=

V_GS0V

1

Without heatsink

0

100

0.5

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100

V_DS(V)

21

2SK1192

Absolute Maximum Ratings

External dimensions

2 ...... FM100

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

±20

±40

I_GSS

±500

250

4.0

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 20A

V_GS= 10V, I_D= 20A

I_{D (pulse)}

P_D

±160 (Tch 150ºC)

90 (Tc = 25ºC)

38

A

V_TH

2.0

13

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

20

0.021

2500

1200

260

S

E_AS

0.028

Ω

*

Tch

150

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tstg

–55 to +150

Coss

t_on

I_D= 20A, V_DD= 30V,

V_GS= 10V,

See Figure 2 on Page 5.

: V = 25V, L = 50µH, I = 30A, unclamped,

DD

L

*

See Figure 1 on Page 5.

t_off

120

I_D– V_DSCharacteristics (typical)

40

10V

35

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

40

=

V_DS10V

=

V_GS10V

35

30

25

20

30

25

6V

20

10

0

15

10

5

5.5V

10

=

–

T_C

55ºC

=

V_GS5V

25ºC

5

0

125ºC

0

1

2

3

4

5

0

2

4

6

8

10

0

10

20

30

40

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

50

2

40

=

V_DS10V

=

I_D20A

=

–

T_C

55ºC

25ºC

=

V_GS10V

30

20

10

0

125ºC

10

5

1

0

=

I_D40A

1

=

I_D20A

0.5

0.3

0.05 0.1

150

0.5

1

5

10

50

5

10

20

–50

0

50

Tc (ºC)

100

I_D(A)

V_GS(V)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

40

Safe Operating Area

200

I_D(pulse) max

100

P

_D– Ta Characteristics

90

(Tc = 25ºC)

10000

=

V_GS0V

80

70

60

50

40

=

35

30

25

f

1MHz

5000

50

I_Dmax

Ciss

10V

20

Coss

1000

500

10

5

15

30

20

5V

10

Crss

40

=

V_GS0V

5

0

10

Without heatsink

1

0.5

100

0

10

20

30

50

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

0

50

100

Ta (ºC)

150

1

5

10

50 100

V_DS(V)

22

2SK1712

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

±10

V

nA

µA

V

I_D= 250µA, V_GS= 0V

V_GS= ±10V

(BR) DSS

I_GSS

±500

250

2.0

±15

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 8.0A

V_GS= 4V, I_D= 8.0A

V_GS= 10V, I_D= 8.0A

I_{D (pulse)}

P_D

A

V_TH

1.0

5.6

±60 (Tch 150ºC)

30 (Tc = 25ºC)

6.2

W

mJ

ºC

Re _(yfs)

8.4

S

E_AS

0.12

0.07

820

360

100

75

0.14

0.1

Ω

*

R_{DS (on)}

Tch

150

Ω

Tstg

–55 to +150

Ciss

Coss

t_on

pF

ns

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

: V = 25V, L = 50µH, I = 12A, unclamped,

DD

L

*

See Figure 1 on Page 5.

I_D= 8A, V_DD= 30V,

V_GS= 10V,

See Figure 2 on Page 5.

t_off

I_D– V_DSCharacteristics (typical)

16

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

16

0.14

=

V_DS10V

4V

5V 4.5V

14

12

10

14

12

10

0.12

0.10

4V

0.08

3.5V

8

6

4

2

0

8

6

4

2

0

=

V_GS10V

0.06

0.04

=

–

T_C

55ºC

25ºC

125ºC

=

V_GS3V

0.02

0

1

2

3

4

5

0

2

4

6

8

10

12

14

16

0

1

2

3

4

5

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

20

2

0.17

=

V_DS10V

=

I_D8A

=

–

T_C

55ºC

25ºC

0.15

0.13

0.11

0.09

0.07

0.05

0.03

10

5

125ºC

4V

15A

1

0

1

=

V_GS10V

=

I_D8A

0.5

0.2

0.03 0.1

150

–50

0

50

100

0.5

1

5

10 20

2

5

10

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

30

(Tc = 25ºC)

3000

100

I_D(pulse) max

=

V_GS0V

14

12

10

50

=

f

1MHz

1000

500

Ciss

I_Dmax

10

20

10

10V

8

Coss

5

6

4 V

100

4

Crss

40

1

=

V_GS0V

2

0

50

30

Without heatsink

0

0.5

0.3

0

10

20

30

50

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_SD(V)

V_DS(V)

23

2SK2419

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V

I_D= 100µA, V_GS= 0V

(BR)DSS

V

V_DSS

V_GSS

I_D

60

±20

V

I_GSS

I_DSS

V_TH

nA

µA

V

_GS= ±20V

±100

100

4.0

V

_DS= 60V, V_GS= 0V

±25

A

2.0

10

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 12A

V_GS= 10V, I_D= 12A

V

S

I_{D (pulse)}

±100

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

15

31

P_D

35 (Tc = 25ºC)

26

W

mJ

ºC

mΩ

pF

ns

V

37

E_AS

1300

500

200

30

V_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tch

150

Tstg

–55 to +150

: P

100µs, duty cycle 1%

W

*

I_D= 12A, V_DD30V,

_GS= 10V, R_L= 2.5Ω

See Figure 2 on Page 5.

160

75

V

t_{d (off)}

t_r

30

V_SD

1.5

V_GS= 0V, I_SD= 25A

1.0

24

2SK2420

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

±20

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

I_GSS

±100

100

4.0

±30

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 15A

V_GS= 10V, I_D= 15A

1

I_{D (pulse)}

±120

A

V_TH

2.0

13

*

P_D

40 (Tc = 25ºC)

38

W

mJ

ºC

Re _(yfs)

R_{DS (on)}

Ciss

20

21

S

2

E_AS

Tch

Tstg

28

mΩ

pF

ns

*

150

2200

850

210

145

V_DS= 25V, f = 1.0MHz,

V_GS= 0V

–55 to +150

Coss

t_on

I_D= 15A, V_DD30V,

R_L= 2Ω, V_GS= 10V,

See Figure 2 on Page 5.

1: P

100µs, duty cycle 1%

W

*

2: V = 50V, L = 50µH, I = 30A, unclamped, R = 50Ω,

DD

L

G

*

t_off

ns

See Figure 1 on Page 5.

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

40

30

10V

=

V_GS10V

=

V_DS10V

5.5V

6V

30

20

10

0

20

10

0

5V

=

–

T_C

55ºC

10

0

25ºC

4.5V

125ºC

=

V_GS4V

0

1

2

3

4

5

0

1

2

3

4

5

6

0

10

20

30

150

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

40

V

_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

1.5

1.0

0.5

0

40

=

V_DS10V

=

I_D15A

=

V_GS10V

30

20

10

0

10

5

=

–

T_C

55ºC

=

I_D30A

25ºC

125ºC

1

=

I_D15A

0.5

0.3

0.1

0.5

1

5

10

30

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

6000

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

200

P

_D– Ta Characteristics

40

(Tc = 25ºC)

30

I_D(pulse) max

=

V_GS0V

f

=

100

1MHz

Ciss

50

30

20

10

10V

I_Dmax

20

1000

500

5V

10

5

Coss

Crss

=

V_GS0V

10

0

1

Without heatsink

0

0.5

0.3

100

0

10

20

30

40

50

0

0.5

V_SD(V)

1.0

1.2

0

50

100

Ta (ºC)

0.5

1

5

10

50 100

V_DS(V)

25

2SK2421

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

60

max

V_DSS

V_GSS

I_D

60

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

±20

I_GSS

±100

100

4.0

±40

±160

A

I_DSS

V_DS= 60V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 10V, I_D= 20A

V_GS= 10V, I_D= 20A

1

I_{D (pulse)}

A

V_TH

2.0

18

*

P_D

40 (Tc = 25ºC)

60

W

mJ

A

Re _(yfs)

R_{DS (on)}

Ciss

25

17.5

2400

950

S

2

E_AS

I_AS

20

mΩ

pF

ns

*

40

V

_DS= 25V, f = 1.0MHz,

V_GS= 0V

Tch

Tstg

150

ºC

Coss

t_on

I_D= 20A, V_DD30V,

R_L= 1.5Ω, V_GS= 10V,

See Figure 2 on Page 5.

–55 to +150

400

1: P

100µs, duty cycle 1%

W

t_off

195

ns

*

2: V = 20V, L = 50µH, I = 40A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

30

40

10V

=

V_DS10V

5.5V

=

V_GS10V

5V

30

20

10

0

30

20

10

0

=

V_GS4.5V

=

–

T_C

55ºC

25ºC

125ºC

10

0

1

2

3

4

5

0

2

4

6

0

10

20

30

40

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

50

2

40

=

V_DS10V

=

I_D20A

=

V_GS10V

30

20

10

0

10

5

1

0

=

–

T_C

55ºC

25ºC

=

I_D40A

125ºC

=

I_D20A

1

0.5

150

0.1

0.5

1

5

10

50

4

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

P

_D– Ta Characteristics

7000

40

=

V_GS0V

5000

=

f

1MHz

Ciss

30

20

10

30

10V

1000

500

5V

Coss

Crss

20

10

=

V_GS0V

Without heatsink

0

100

0

10

20

30

40

50

0

0.5

V_SD(V)

1.0

1.2

0

50

100

Ta (ºC)

150

V_DS(V)

26

2SK2701

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

450

V

I_GSS

±100

100

4.0

±30

I_DSS

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 3.5A

V_GS= 10V, I_D= 3.5A

±7

A

V_TH

2.0

3.5

3.0

5

1

I_{D (pulse)}

±28

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

0.84

720

150

65

1.10

Ω

P_D

35 (Tc = 25ºC)

W

mJ

A

pF

ns

V

2

E_AS

I_AS

130

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

7

150

Tch

Tstg

ºC

25

I_D= 3.5A, V_DD= 200V,

R_L= 57Ω, V_GS= 10V,

See Figure 2 on Page 5.

40

–55 to +150

t_{d (off)}

t_f

70

1: P

100µs, duty cycle 1%

W

*

2: V = 30V, L = 5mH, I = 7A, unclamped, R = 50Ω,

50

DD

L

G

*

See Figure 1 on Page 5.

V_SD

1.0

1.5

I_SD= 7A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

1.0

7

V_GS= 10V

V_DS= 20V

10V

5.5V

6

5

6

5

4

0.8

0.6

0.4

5V

4

3

2

3

2

1

0

V

_GS= 4.5V

T_C= –55ºC

25ºC

125ºC

0.2

0

1

0

5

10

15

20

0

2

4

6

8

0

1

2

3

4

5

6

7

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

2.5

10

V_DS= 20V

I_D= 3.5A

_GS= 10V

T

_C= –55ºC

V

5

2.0

1.5

1.0

8

25ºC

I_D= 7A

125ºC

6

1

4

I_D= 3.5A

0.5

2

0

0.5

0

0.2

0.05 0.1

4

5

10

20

150

0.5

1

5 7

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

7

Safe Operating Area

P

_D– Ta Characteristics

40

(Tc = 25ºC)

2000

50

I_D(pulse) max

V_GS= 0V

f= 1MHz

1000

500

6

5

4

3

10

5

I_Dmax

30

20

10

Ciss

1

V

_GS= 0V

100

50

0.5

Coss

Crss

40

2

1

0

5V,10V

0.1

Without heatsink

0

20

0.05

0

10

20

30

50

0

0.2

0.4

0.6

V_SD(V)

0.8

1.0

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

27

2SK2702

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

450

V

I_GSS

±100

100

4.0

±30

±10

I_DSS

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 5A

V_GS= 10V, I_D= 5A

A

V_TH

2.0

5

3.0

7

1

I_{D (pulse)}

±40

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

0.66

1000

200

95

0.80

Ω

P_D

35 (Tc = 25ºC)

300

W

mJ

A

pF

ns

V

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

10

Tch

Tstg

150

ºC

25

I_D= 5A, V_DD= 200V,

R_L= 40Ω, V_GS= 10V,

See Figure 2 on Page 5.

30

–55 to +150

t_{d (off)}

t_f

85

1: P

100µs, duty cycle 1%

W

*

45

2: V = 30V, L = 6mH, I = 10A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

1.0

1.5

I_SD= 10A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

10

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

1.0

10

5.5V

10V

V_GS= 10V

V_DS= 20V

8

0.8

8

6

4

2

0

5V

6

4

2

0

0.6

0.4

0.2

0

T_C= –55ºC

25ºC

V

_GS= 4.5V

125ºC

0

5

10

15

20

0

2

4

6

8

0

2

4

6

8

10

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

20

2.0

I_D= 5A

V_DS= 20V

V

_GS= 10V

T_C= –55ºC

25ºC

10

5

8

I_D= 10A

1.5

1.0

0.5

0

125ºC

6

4

I_D= 5A

1

2

0

0.5

0.2

4

5

10

20

150

0.05 0.1

0.5

1

5

10

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

10

Safe Operating Area

P

_D– Ta Characteristics

40

(Tc = 25ºC)

5000

50

V

_GS= 0V

I_D(pulse) max

f= 1MHz

I_Dmax

10

8

30

20

10

Ciss

1000

500

5

6

5V,10V

1

4

2

Coss

Crss

0.5

100

50

V_GS= 0V

0.1

Without heatsink

0

0.05

20

0

10

20

30

40

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

28

2SK2703

Absolute Maximum Ratings

External dimensions

2 ...... FM100

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

450

V

I_GSS

±100

100

4.0

±30

±10

I_DSS

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 5A

V_GS= 10V, I_D= 5A

A

V_TH

2.0

5

3.0

7

1

I_{D (pulse)}

±40

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

0.66

1000

200

95

0.80

Ω

P_D

75 (Tc = 25ºC)

300

W

mJ

A

pF

ns

V

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

10

Tch

Tstg

150

ºC

25

I_D= 5A, V_DD= 200V,

R_L= 40Ω, V_GS= 10V,

See Figure 2 on Page 5.

30

–55 to +150

t_{d (off)}

t_f

85

1: P

100µs, duty cycle 1%

W

*

45

2: V = 30V, L = 6mH, I = 10A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

1.0

1.5

I_SD= 10A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

10

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

1.0

10

5.5V

10V

V_GS= 10V

V_DS= 20V

8

0.8

8

6

4

2

0

5V

6

4

2

0

0.6

0.4

0.2

0

T_C= –55ºC

25ºC

V

_GS= 4.5V

125ºC

0

5

10

15

20

0

2

4

6

8

0

2

4

6

8

10

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

20

2.0

I_D= 5A

V_DS= 20V

V

_GS= 10V

T_C= –55ºC

25ºC

10

5

I_D= 10A

8

1.5

1.0

0.5

0

125ºC

6

4

I_D= 5A

1

2

0

0.5

0.2

4

5

10

20

150

0.05 0.1

0.5

1

5

10

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

10

Safe Operating Area

P

_D– Ta Characteristics

75

70

(Tc = 25ºC)

5000

50

V

_GS= 0V

I_D(pulse) max

f= 1MHz

8

60

50

40

30

20

I_Dmax

10

Ciss

1000

500

5

6

5V,10V

4

2

1

Coss

Crss

100

50

0.5

V_GS= 0V

10

Without heatsink

20

0.1

0

10

20

30

40

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

29

2SK2704

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

450

V

I_GSS

±100

100

4.0

±30

±13

I_DSS

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 6.5A

V_GS= 10V, I_D= 6.5A

A

V_TH

2.0

6.0

3.0

9.0

1

I_{D (pulse)}

±52

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

0.48

1300

280

130

30

0.57

Ω

P_D

40 (Tc = 25ºC)

400

W

mJ

A

pF

ns

V

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

13

Tch

Tstg

150

ºC

I_D= 6.5A, V_DD200V,

R_L= 30Ω, V_GS= 10V,

See Figure 2 on Page 5.

40

–55 to +150

t_{d (off)}

t_f

95

1: P

100µs, duty cycle 1%

W

*

50

2: V = 30V, L = 4.5mH, I = 13A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

1.0

1.5

I_SD= 13A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

0.6

14

V_DS= 20V

V_GS= 10V

5.5V

10V

12

10

12

10

0.5

0.4

0.3

0.2

0.1

0

8

6

4

2

0

5V

6

T_C= –55ºC

25ºC

4

4.5V

125ºC

2

V

_GS= 4V

0

5

10

15

20

0

2

4

6

8

0

2

4

6

8

10

12 13

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

20

1.4

I_D= 6.5A

_GS= 10V

V_DS= 20V

V

T_C= –55ºC

25ºC

1.2

1.0

10

5

8

I_D= 13A

I_D= 6.5A

125ºC

6

0.8

0.6

4

1

0.4

0.2

0

2

0

0.5

0.2

0.05 0.1

4

5

10

20

150

0.5

1

5

13

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

14

Safe Operating Area

P

_D– Ta Characteristics

40

(Tc = 25ºC)

70

5000

50

V_GS= 0V

I_D(pulse) max

f= 1MHz

12

10

I_Dmax

10

30

20

10

Ciss

1000

500

5

8

5V,10V

6

1

0.5

4

Coss

Crss

40

V

_GS= 0V

100

50

2

0

0.1

Without heatsink

0

0.05

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

2

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

30

2SK2705

Absolute Maximum Ratings

External dimensions

2 ...... FM100

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

450

V

I_GSS

±100

100

4.0

±30

±13

I_DSS

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 6.5A

V_GS= 10V, I_D= 6.5A

A

V_TH

2.0

6.0

3.0

9.0

1

I_{D (pulse)}

±52

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

0.48

1300

280

130

30

0.57

Ω

P_D

75 (Tc = 25ºC)

400

W

mJ

A

pF

ns

V

2

E_AS

I_AS

*

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

13

Tch

Tstg

150

ºC

I_D= 6.5A, V_DD200V,

R_L= 30Ω, V_GS= 10V,

See Figure 2 on Page 5.

40

–55 to +150

t_{d (off)}

t_f

95

1: P

100µs, duty cycle 1%

W

*

50

2: V = 30V, L = 4.5mH, I = 13A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

1.0

1.5

I_SD= 13A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

0.6

14

V_DS= 20V

V_GS= 10V

5.5V

10V

12

10

12

10

0.5

0.4

0.3

0.2

0.1

0

8

6

4

2

0

5V

6

T_C= –55ºC

25ºC

4

4.5V

125ºC

2

V

_GS= 4V

0

5

10

15

20

0

2

4

6

8

0

2

4

6

8

10

12 13

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

20

1.4

I_D= 6.5A

_GS= 10V

V_DS= 20V

V

T_C= –55ºC

25ºC

1.2

1.0

10

5

8

I_D= 13A

I_D= 6.5A

125ºC

6

0.8

0.6

4

1

0.4

0.2

0

2

0

0.5

0.2

0.05 0.1

4

5

10

20

150

0.5

1

5

13

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

75

70

(Tc = 25ºC)

70

5000

14

50

V

_GS= 0V

I_D(pulse) max

f= 1MHz

12

10

60

50

40

30

20

I_Dmax

10

Ciss

1000

500

5

8

5V,10V

6

1

4

Coss

Crss

40

0.5

V

_GS= 0V

100

50

2

0

10

Without heatsink

0.1

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

31

2SK2706

Absolute Maximum Ratings

External dimensions

2 ...... FM100

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

450

V

I_GSS

±100

100

4.0

±30

±18

I_DSS

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 9A

V_GS= 10V, I_D= 9A

A

V_TH

2.0

10

3.0

15

1

I_{D (pulse)}

±72

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

0.24

2500

500

260

40

0.30

Ω

P_D

85 (Tc = 25ºC)

700

W

mJ

A

pF

ns

V

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

18

Tch

Tstg

150

ºC

I_D= 9A, V_DD= 200V,

R_L= 22Ω, V_GS= 10V,

See Figure 2 on Page 5.

60

–55 to +150

t_{d (off)}

t_f

170

85

1: P

100µs, duty cycle 1%

W

*

2: V = 30V, L = 4mH, I = 18A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

1.0

1.5

I_SD= 18A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

18

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

0.3

18

V

_GS= 10V

V

_DS= 20V

10V

16

14

12

10

16

14

12

10

8

5V

0.2

0.1

0

8

6

4

2

0

4.5V

6

4

2

0

T_C= –55ºC

25ºC

125ºC

V

_GS= 4V

0

5

10

15

20

0

2

4

6

8

0

2

4

6

8

10

12

14

16

18

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

30

10

0.7

V_DS= 20V

I_D= 9A

_GS= 10V

T

_C= –55ºC

V

0.6

0.5

0.4

8

25ºC

10

5

125ºC

6

I_D= 18A

I_D= 9A

0.3

0.2

0.1

0

4

1

2

0

0.5

0.3

0.05 0.1

4

5

10

20

150

0.5

1

5

10 18

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

18

Safe Operating Area

P

_D– Ta Characteristics

(Tc = 25ºC)

10000

100

90

V

_GS= 0V

I

D

(pulse) max

50

16

14

12

10

8

80

70

60

50

40

30

20

f= 1MHz

5000

I_Dmax

Ciss

10

5

1000

500

V_GS= 0V

1

6

4

2

0

5V,10V

Coss

Crss

40

0.5

10

Without heatsink

100

0.1

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

32

2SK2707

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

600

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

600

V

I_GSS

±100

100

4.0

±30

±4.5

I_DSS

V_DS= 600V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 2A

V_GS= 10V, I_D= 2A

A

V_TH

2.0

2.4

3.0

3.5

1.45

560

130

65

1

I_{D (pulse)}

±18

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

1.85

Ω

P_D

35 (Tc = 25ºC)

50

W

mJ

A

pF

ns

V

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

4.5

Tch

Tstg

150

ºC

20

I_D= 2A, V_DD= 250V,

R_L= 125Ω, V_GS= 10V,

See Figure 2 on Page 5.

30

–55 to +150

t_{d (off)}

t_f

65

1: P

100µs, duty cycle 1%

W

*

90

2: V = 30V, L = 5mH, I = 4.5A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

0.9

1.5

I_SD= 4.5A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

2.0

5

V_GS= 10V

V_DS= 20V

10V

5V

4

3

2

1

0

1.6

1.2

3

4.5V

2

0.8

0.4

0

T_C= –55ºC

25ºC

125ºC

1

V_GS= 4V

0

5

10

15

20

0

2

4

6

8

0

1

2

3

4

5

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

5

V_DS= 20V

I_D= 2A

_GS= 10V

T

_C= –55ºC

V

5

8

4

3

2

25ºC

I_D= 4.5A

125ºC

6

1

4

I_D= 2A

0.5

2

0

1

0

0.2

0.05 0.1

4

5

10

20

150

0.5

1

4.5

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

40

(Tc = 25ºC)

5000

5

20

V

_GS= 0V

I_D(pulse) max

10

f= 1MHz

4

3

I_Dmax

5

30

20

10

1000

500

Ciss

1

V

_GS= 0V

2

1

0

0.5

5V,10V

100

50

Coss

Crss

0.1

Without heatsink

0

20

0.05

0

10

20

30

40

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 700

V_DS(V)

V_SD(V)

33

2SK2708

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

600

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

600

V

I_GSS

±100

100

4.0

±30

I_DSS

V_DS= 600V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 3.5A

V_GS= 10V, I_D= 3.5A

±7

A

V_TH

2.0

4.0

3.0

6.0

0.85

950

220

120

30

1

I_{D (pulse)}

±28

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

1.1

Ω

P_D

40 (Tc = 25ºC)

W

mJ

A

pF

ns

V

2

E_AS

I_AS

150

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

7

150

Tch

Tstg

ºC

I_D= 3.5A, V_DD= 250V,

R_L= 71Ω, V_GS= 10V,

See Figure 2 on Page 5.

27

–55 to +150

t_{d (off)}

t_f

100

50

1: P

100µs, duty cycle 1%

W

*

2: V = 30V, L = 6mH, I = 7A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

0.9

1.5

I_SD= 7A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

1.0

7

V_GS= 10V

V_DS= 20V

10V 5.5V

5V

6

5

0.8

0.6

5

4

3

4.5V

0.4

0.2

0

2

1

2

1

T_C= –55ºC

25ºC

V_GS= 4V

125ºC

0

5

10

15

20

0

2

4

6

8

0

1

2

3

4

5

6

7

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

2.5

V_DS= 20V

I_D= 3.5A

_GS= 10V

T

_C= –55ºC

V

5

8

2.0

1.5

1.0

25ºC

125ºC

I_D= 7A

6

4

1

I_D= 3.5A

2

0

0.5

0

0.5

0.3

4

5

10

20

150

0.05 0.1

0.5

1

5 7

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

40

(Tc = 25ºC)

5000

7

30

I_D(pulse) max

V_GS= 0V

f= 1MHz

6

5

4

3

10

5

I_Dmax

30

20

10

Ciss

1000

500

1

V

_GS= 0V

0.5

5V,10V

2

1

0

Coss

Crss

40

100

40

0.1

Without heatsink

0

0.05

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 700

V_DS(V)

V_SD(V)

34

2SK2709

Absolute Maximum Ratings

External dimensions

2 ...... FM100

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

600

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

600

±30

V

I_GSS

±100

100

4.0

I_DSS

V_DS= 600V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 4A

V_GS= 10V, I_D= 4A

±8.5

A

V_TH

2.0

5.0

3.0

7.0

1

I_{D (pulse)}

±34

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

0.65

1200

270

150

30

0.85

Ω

P_D

85 (Tc = 25ºC)

300

W

mJ

A

pF

ns

V

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

8.5

Tch

Tstg

150

ºC

I_D= 4A, V_DD= 250V,

R_L= 62.5Ω, V_GS= 10V,

See Figure 2 on Page 5.

40

–55 to +150

t_{d (off)}

t_f

110

65

1: P

100µs, duty cycle 1%

W

*

2: V = 30V, L = 8mH, I = 8.5A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

0.95

1.5

I_SD= 8.5A, V_GS= 0V

35

2SK2710

Absolute Maximum Ratings

External dimensions

2 ...... FM100

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

600

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

600

V

I_GSS

±100

100

4.0

±30

±12

I_DSS

V_DS= 600V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 6A

V_GS= 10V, I_D= 6A

A

V_TH

2.0

7.5

3.0

11

1

I_{D (pulse)}

±48

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

0.42

1900

410

240

35

0.55

Ω

P_D

85 (Tc = 25ºC)

400

W

mJ

A

pF

ns

V

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

12

Tch

Tstg

150

ºC

I_D= 6A, V_DD= 250V,

R_L= 20.8Ω, V_GS= 10V,

See Figure 2 on Page 5.

45

–55 to +150

t_{d (off)}

t_f

160

70

1: P

100µs, duty cycle 1%

W

*

2: V = 30V, L = 5.5mH, I = 12A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

0.95

1.5

I_SD= 12A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

0.5

12

V_GS= 10V

V_DS= 20V

10V

5.5V

10

8

10

8

0.4

0.3

6

T_C= –55ºC

25ºC

6

5V

0.2

0.1

0

4

2

125ºC

2

V

_GS= 4.5V

0

5

10

15

20

0

2

4

6

8

0

2

4

6

8

10

12

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

20

10

1.2

V_DS= 20V

I_D= 6A

_GS= 10V

T

_C= –55ºC

V

1.0

0.8

0.6

10

5

8

25ºC

125ºC

6

I_D= 12A

I_D= 6A

4

0.4

0.2

0

1

2

0

0.5

0.3

4

5

10

20

150

0.05 0.1

0.5

1

5

12

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

12

Safe Operating Area

P

_D– Ta Characteristics

90

(Tc = 25ºC)

10000

50

I_D(pulse) max

V_GS= 0V

80

70

60

50

40

30

20

f= 1MHz

5000

10

8

I_Dmax

10

Ciss

5

1000

500

6

V

_GS= 0V

1

4

2

0

Coss

Crss

5V,10V

0.5

100

50

10

Without heatsink

0.1

0

10

20

30

40

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500 700

V_DS(V)

V_SD(V)

36

2SK2778

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

100

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

V_DSS

V_GSS

I_D

100

V

I_GSS

±100

100

2.0

±20

I_DSS

V_DS= 100V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 6A

V_GS= 10V, I_D= 6A

±12

A

V_TH

1.0

7

1

Re _(yfs)

11

105

130

740

240

75

S

I_{D (pulse)}

±48

A

*

175

220

mΩ

pF

ns

P_D

30 (Tc = 25ºC)

W

mJ

A

R_{DS (on)}

V

_GS= 4V, I_D= 6A

2

E_AS

I_AS

70

12

*

Ciss

Coss

Crss

t_{d (on)}

t_r

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Tch

Tstg

150

ºC

15

–55 to +150

I_D= 6A, V_DD50V,

R_L= 8.3Ω, V_GS= 10V,

See Figure 2 on Page 5.

55

ns

1: P

100µs, duty cycle 1%

W

t_{d (off)}

t_f

60

ns

*

2: V = 25V, L = 730µH, I = 12A, unclamped, R = 50Ω,

DD

L

G

*

20

ns

See Figure 1 on Page 5.

V_SD

1.0

1.5

V

I_SD= 12A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

200

12

10V

V_DS= 10V

4V

10

8

3.5V

V_GS= 4V

150

100

8

3V

V_GS= 10V

6

4

6

4

2

0

T_C= –55ºC

25ºC

50

0

125ºC

V

_GS= 2.5V

2

0

2

4

6

8

10

0

1

2

3

4

0

2

4

6

8

10

12

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

5

4

3

2

20

300

I_D= 6 A

V

_DS= 10V

T_C= –55ºC

25ºC

250

10

5

V

_GS= 4V

125ºC

200

150

100

V

_GS= 10V

I_D= 12A

I_D= 6A

1

0

50

0

0.4

0.05 0.1

2

5

10

20

150

0.5

1

5

12

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

(Tc = 25ºC)

5000

12

50

V

_GS= 0V

I_D(pulse) max

30

f= 1MHz

10

I_Dmax

10

1000

500

Ciss

8

10V

5

20

10

6

5V

Coss

1

4

100

50

0.5

V

_GS= 0V

2

0

Crss

40

Without heatsink

0

20

0.1

0.5

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

1

5

10

50 100 200

V_DS(V)

V_SD(V)

V_DS(V)

37

2SK2779

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

100

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

(BR) DSS

V_DSS

V_GSS

I_D

100

V

I_GSS

±100

100

2.0

±20

I_DSS

V_DS= 100V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 10A

V_GS= 10V, I_D= 10A

V_GS= 4V, I_D= 10A

A

V_TH

1.0

12

1

Re _(yfs)

20

60

S

I_{D (pulse)}

±80

A

*

80

95

mΩ

pF

ns

P_D

35 (Tc = 25ºC)

200

W

mJ

A

R_{DS (on)}

75

2

E_AS

I_AS

*

Ciss

Coss

Crss

t_{d (on)}

t_r

1630

480

180

20

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

20

Tch

Tstg

150

ºC

–55 to +150

I_D= 10A, V_DD50V,

R_L= 5Ω, V_GS= 10V,

See Figure 2 on Page 5.

90

ns

1: P

100µs, duty cycle 1%

W

t_{d (off)}

t_f

120

55

ns

*

2: V = 25V, L = 750µH, I = 20A, unclamped, R = 50Ω,

DD

L

G

ns

*

See Figure 1 on Page 5.

V_SD

1.0

1.5

V

I_SD= 20A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

80

20

10V

V_DS= 10V

V_GS= 4V

4V

3.5V

3V

60

40

20

0

15

10

15

10

V

_GS= 10V

T_C= –55ºC

25ºC

2.5V

5

0

5

0

125ºC

V

_GS= 2V

0

2

4

6

8

10

0

1

2

3

4

0

5

10

15

20

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

2.5

2.0

1.5

1.0

50

150

I_D= 10A

V

_DS= 10V

T_C= –55ºC

25ºC

V

_GS= 4V

125ºC

100

10

5

V_GS= 10V

I_D= 20A

I_D= 10A

50

0

0.5

0

1

0.5

0.05 0.1

2

5

10

20

150

0.5

1

5

10 20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

20

Safe Operating Area

P

_D– Ta Characteristics

40

(Tc = 25ºC)

5000

100

V

_GS= 0V

I_D(pulse) max

50

f= 1MHz

I_Dmax

Ciss

15

30

20

10

5

1000

500

5V

10

5

Coss

1

0.5

V_GS= 0V

100

50

Crss

40

Without heatsink

0

0.1

0.5

0

10

20

30

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

1

5

10

50 100 200

V_DS(V)

V_SD(V)

V_DS(V)

38

2SK2803

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

450

V

I_GSS

±100

100

4.0

±30

I_DSS

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 1.5A

V_GS= 10V, I_D= 1.5A

±3

A

V_TH

2.0

1.5

1

I_{D (pulse)}

±12

A

*

Re _(yfs)

R_{DS (on)}

Ciss

2.1

340

75

S

2.8

Ω

P_D

30 (Tc = 25ºC)

W

mJ

A

pF

ns

V

2

E_AS

I_AS

30

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

3

150

26

Tch

Tstg

ºC

18

I_D= 1.5A, V_DD200V,

R_L= 133Ω, V_GS= 10V,

See Figure 2 on Page 5.

30

–55 to +150

t_{d (off)}

t_f

45

1: P

100µs, duty cycle 1%

W

*

85

2: V = 30V, L = 6.3mH, I = 3.0A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

0.9

1.4

I_SD= 3A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

3.0

4

V_DS=20V

10V

6V

V_GS=10V

5.5V

3

2

1

2.0

5V

T_C=125°C

1.0

0

1.0

25°C

4.5V

–55°C

V

_GS= 4V

0

1

2

3

0

5

10

15

20

0

2

4

6

8

0

V_GS(V)

I_D(A)

V_DS(V)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

5

V_DS= 20V

I_D=1.5A

V_GS=10V

8

4

3

2

1

0

I_D=3A

T_C= –55°C

25°C

6

125°C

1

4

I_D=1.5A

2

0

0.5

0.3

150

0.05 0.1

0.5

I_D(A)

1.0

3.0

—

50

0

50

100

3

5

10

20

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

(T_C= 25°C)

1000

3

20

V_GS= 0V

30

10

f =1MHz

I_D(pulse)max

500

5

Ciss

I_Dmax

2

20

10

1

100

V_GS= 0V

0.5

50

Coss

1

0

5V,10V

0.1

Crss

40

Without heatsink

0

0.05

0.03

10

0

0.5

1.0

1.5

10

20

30

50

3

5

10

50 100

V_DS(V)

500

0

50

100

Ta (ºC)

150

V_DS(V)

V_SD(V)

39

2SK2805

Absolute Maximum Ratings

External dimensions

2 ...... FM100

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

450

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR) DSS

V_DSS

V_GSS

I_D

450

V

I_GSS

±100

100

4.0

±30

±15

I_DSS

V_DS= 450V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 7.5A

V_GS= 10V, I_D= 7.5A

A

V_TH

2.0

8.0

3.0

11.5

0.30

2100

430

210

35

1

I_{D (pulse)}

±60

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

0.38

Ω

P_D

80 (Tc = 25ºC)

550

W

mJ

A

pF

ns

V

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

15

Tch

Tstg

150

ºC

I_D= 7.5A, V_DD200V,

R_L= 26.7Ω, V_GS= 10V,

See Figure 2 on Page 5.

45

–55 to +150

t_{d (off)}

t_f

130

60

1: P

100µs, duty cycle 1%

W

*

2: V = 30V, L = 4.6mH, I = 15A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

0.95

1.4

I_SD= 15A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

0.5

15

10V

V_DS=20V

V_GS=10V

5.5V

0.4

0.3

0.2

10

5V

T_C=125°C

5

0

0.1

0

V

_GS= 4.5V

25°C

–55°C

0

15

0

5

10

15

20

0

2

4

6

8

0

5

10

V_GS(V)

V_DS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

15

10

5

1.0

20

V_DS= 20V

I_D=7.5A

V_GS=10V

10

5

T_C= –55°C

25°C

0.8

0.6

0.4

0.2

0

125°C

1

I_D=15A

I_D=7.5A

0.5

0.2

0.05 0.1

0

150

0.5

1

5

10 16

—

50

0

50

100

4

5

10

V_GS(V)

20

Tc (ºC)

I_D(A)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

15

Safe Operating Area

P

_D– Ta Characteristics

(T_C= 25°C)

90

10000

100

V_GS= 0V

50

I_D(

₎max

80

60

40

20

pulse

f =1MHz

5000

I_Dmax

Ciss

10

5

10

1000

V_GS= 0V

500

1

5V,10V

5

0

Coss

0.5

Crss

100

0.1

Without heatsink

0

50

0.05

0

0.5

1.0

1.5

10

20

30

40

50

0

50

100

Ta (ºC)

150

3

5

10

50 100

V_DS(V)

500

V_DS(V)

V_SD(V)

40

2SK2848

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

600

max

V

nA

µA

V

I_D

=

100µA, V_GS

=

0V

(BR) DSS

V_DSS

V_GSS

I_D

600

V

I_GSS

±

100

4.0

V_GS= ±30V

±30

I_DSS

V_DS

V_GS

=

600V, V_GS=

±2

A

V_TH

2.0

1.2

3.0

1.7

3.0

290

70

10V, I_D

20V, I_D

10V, I_D

=

250µA

1A

1

I_{D (pulse)}

±8

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

3.8

Ω

1A

P_D

30 (Tc = 25ºC)

W

mJ

A

pF

ns

V

2

E_AS

I_AS

10

*

V_DS

V_GS

=

10V, f

0V

= 1.0MHz,

Coss

Crss

t_{d (on)}

t_r

2

150

30

Tch

Tstg

ºC

16

I_D= 1A, V_DD250V,

R_L= 250Ω, V_GS= 10V,

See Figure 2 on Page 5.

30

–55 to +150

t_{d (off)}

t_f

45

1: P

100µs, duty cycle 1%

W

*

145

0.9

2: V = 30V, L = 5mH, I = 2.0A, unclamped, R = 50Ω,

DD

L

G

*

See Figure 1 on Page 5.

V_SD

1.4

I_SD= 2.0A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

4

2.0

10V

V_DS= 20V

V_GS= 10V

5.5V

3

2

1.5

1.0

1.5

5V

1.0

4.5V

0.5

0

1

0

0.5

0

T_C= –55ºC

25ºC

125ºC

V

_GS= 4V

0

5

10

15

20

0

2

4

6

8

0

0.5

1.0

1.5

2.0

150

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V

_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

20

15

10

5

8

V

_DS= 20V

I_D= 1A

_GS= 10V

V

T

_C= –55ºC

25ºC

6

4

2

0

125ºC

1

I_D= 2A

I_D= 1A

0.5

5

0

0.2

0.05

4

5

10

20

0.1

0.5

I_D(A)

1

2

–50

0

50

100

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

10

P

_D– Ta Characteristics

(Tc = 25ºC)

1000

2.0

V

_GS= 0V

f= 1MHz

30

I_D(pulse) max

5

500

Ciss

I_Dmax

1.5

1.0

20

10

1

100

50

0.5

V

_GS= 0V

Coss

5V,10V

0.5

0

0.1

Crss

40

Without heatsink

0

0.05

0.03

10

0

10

20

30

50

0

50

100

Ta (ºC)

0

0.5

1.0

1.5

3

5

10

50 100

V_DS(V)

500 700

V_DS(V)

V_SD(V)

41

2SK2943

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

900

max

V_(BR)DSS

I_GSS

I_DSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

V_DSS

V_GSS

I_D

900

V

±100

100

4.0

±30

V_DS= 900V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 1.5A

V_GS= 10V, I_D= 1.5A

±3

A

V_TH

2.0

1.8

1

I_{D (pulse)}

±12

A

*

Re _(yfs)

R_{DS (on)}

Ciss

2.8

4.0

600

100

40

S

P_D

30 (Tc = 25ºC)

W

mJ

A

5.0

Ω

pF

ns

V

2

E_AS

I_AS

60

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

3

150

Tch

Tstg

ºC

20

I_D= 1.5A, V_DD250V,

R_L= 167Ω, V_GS= 10V

See Figure 2 on Page 5.

–55 to +150

30

t_{d (off)}

t_f

65

1: P

100µs, duty cycle 1%

W

*

2: V = 50V, L = 13mH, I = 3A, unclamped, R = 50Ω,

DD

L

G

100

1.0

*

See Figure 1 on Page 5.

V_SD

1.5

I_SD= 3A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

3.0

5

5V

6V

10V

V_DS=20V

V_GS=10V

2.5

2.0

1.5

1.0

0.5

0

4

3

2

4.8V

4.5V

2.0

T_C=125°C

1.0

0

25°C

1

0

V

_GS= 4V

–55°C

3.0

150

0

5

10

15

20

0

2

4

6

8

0

0.5

1.0

1.5

2.0

2.5

V_GS(V)

V_DS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

20

R_{DS (ON)}– T_CCharacteristics (typical)

10

I

_D=1.5A

V_GS=10V

V_DS= 20V

5

8

6

4

2

0

T_C= –55°C

15

25°C

I_D=3A

125°C

10

1

I_D=1.5A

5

0.5

0.2

0.05 0.1

0

0.5

I_D(A)

1

3

—

50

0

50

100

3

5

10

20

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

20

P

_D– Ta Characteristics

(Tc = 25ºC)

3000

3.0

V_GS= 0V

f =1MHz

30

10

5

I_D(pulse)max

I_Dmax

2.5

2.0

1000

500

Ciss

20

10

1

0.5

1.5

V_GS= 0V

100

1.0

Coss

Crss

0.1

5V,10V

50

0.05

0.5

0

Without heatsink

0

10

0.01

0

0.5

1.0

1.5

10

20

30

40

50

0

50

100

Ta (ºC)

0.5

1

5

10

50 100

500 1000

V_DS(V)

V_SD(V)

42

2SK2945

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

900

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR)DSS

I_GSS

I_DSS

V_TH

V_DSS

V_GSS

I_D

900

V

±100

100

4.0

±30

V_DS= 900V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 2.5A

V_GS= 10V, I_D= 2.5A

±5

A

2.0

1

I_{D (pulse)}

±20

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

4.5

2.3

880

140

70

S

P_D

35 (Tc = 25ºC)

W

mJ

A

3.0

Ω

pF

ns

V

2

E_AS

I_AS

120

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

5

150

Tch

Tstg

ºC

25

I_D= 2.5A, V_DD250V,

R_L= 100Ω, V_GS= 10V,

See Figure 2 on Page 5.

–55 to +150

30

t_{d (off)}

t_f

80

1: P

100µs, duty cycle 1%

W

*

2: V = 50V, L = 9mH, I = 5A, unclamped, R = 50Ω,

DD

L

G

70

*

See Figure 1 on Page 5.

V_SD

0.9

7.5

1.5

I_SD= 5A, V_GS= 0V

t_rr

µs

I_SD= ±100mA

43

2SK3002

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

200

max

V_(BR)DSS

I_GSS

I_DSS

V_TH

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

V_DSS

V_GSS

I_D

200

V

±100

100

4.0

±20

V_DS= 200V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 10V, I_D= 4A

V_GS= 10V, I_D= 4A

±8

A

2.0

2.5

1

I_{D (pulse)}

±32

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

5.5

270

450

280

120

15

S

P_D

30 (Tc = 25ºC)

W

mJ

A

350

mΩ

pF

ns

V

2

E_AS

I_AS

55

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

8

150

Tch

Tstg

ºC

I

_D= 4A, V_DD100V,

R_L= 25Ω, V_GS= 10V,

See Figure 2 on Page 5.

–55 to +150

25

t_{d (off)}

t_f

50

1: P

100µs, duty cycle 1%

W

*

2: V = 50V, L = 1.5mH, I = 8A, unclamped, R = 50Ω,

DD

L

G

65

*

See Figure 1 on Page 5.

V_SD

1.0

450

1.5

I_SD= 8A, V_GS= 0V

t_rr

ns

I_SD= ±100mA

44

2SK3003

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

200

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

(BR)DSS

I_GSS

I_DSS

V_TH

V_DSS

V_GSS

I_D

200

V

±100

100

4.0

±20

±18

V_DS= 200V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 10V, I_D= 9A

V_GS= 10V, I_D= 9A

A

2.0

7

1

I_{D (pulse)}

±72

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

11

130

850

550

250

20

S

P_D

35 (Tc = 25ºC)

120

W

mJ

A

175

mΩ

pF

ns

V

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

18

Tch

Tstg

150

ºC

I_D= 9A, V_DD100V,

R_L= 11.1Ω, V_GS= 10V,

See Figure 2 on Page 5.

–55 to +150

50

t_{d (off)}

t_f

65

1: P

100µs, duty cycle 1%

W

*

2: V = 25V, L = 650µH, I = 18A, unclamped, R = 50Ω,

DD

L

G

80

*

See Figure 1 on Page 5.

V_SD

1.0

500

1.5

I_SD= 18A, V_GS= 0V

t_rr

ns

I_SD= ±100mA

45

2SK3004

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

250

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

(BR)DSS

I_GSS

I_DSS

V_TH

V_DSS

V_GSS

I_D

250

V

±100

100

4.0

±20

±18

V_DS= 250V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 10V, I_D= 9A

V_GS= 10V, I_D= 9A

A

2.0

7

1

I_{D (pulse)}

±72

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

11

200

850

550

250

20

S

P_D

35 (Tc = 25ºC)

120

W

mJ

A

250

mΩ

pF

ns

V

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

18

Tch

Tstg

150

ºC

I_D= 9A, V_DD100V,

R_L= 11.1Ω, V_GS= 10V,

See Figure 2 on Page 5.

–55 to +150

50

t_{d (off)}

t_f

65

1: P

100µs, duty cycle 1%

W

*

2: V = 25V, L = 670µH, I = 18A, unclamped, R = 50Ω,

DD

L

G

80

*

See Figure 1 on Page 5.

V_SD

1.0

700

1.5

I_SD= 18A, V_GS= 0V

t_rr

ns

I_SD= ±100mA

I_D– V_DSCharacteristics (typical)

I_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

0.30

20

18

V_DS=10V

5.5V

10V

V_GS=10V

15

0.25

0.20

15

10

5V

10

0.15

0.10

0.05

0

T_C=125°C

4.5V

5

0

V

_GS= 4V

25°C

–55°C

0

5

10

15

20

0

2

4

6

8

0

5

10

I_D(A)

15

18

V_GS(V)

V_DS(V)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

0.5

20

V_DS=10V

I_D=9A

V_GS=10V

T_C= –55°C

10

25°C

8

6

0.4

0.3

0.2

0.1

0

125°C

5

I_D=18A

4

1

I_D=9A

2

0

0.5

0.3

0.05 0.1

0.5

1

5

10 18

150

3

5

10

20

—

50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

100

P

_D– Ta Characteristics

40

(Tc = 25ºC)

3000

18

V_GS= 0V

50

I_D(pulse)max

I_Dmax

f =1MHz

15

10

1000

Ciss

30

20

10

5

500

Coss

1

0.5

100

50

5

0

0.1

0.05

Crss

Without heatsink

0

10

0.01

0

10

20

30

40

50

0

0.5

1.0

1.5

0

50

100

Ta (ºC)

150

0.5

1

5

10

50 100

500

V_DS(V)

V_SD(V)

46

2SK3199

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR)DSS

I_GSS

I_DSS

V_TH

V_DSS

V_GSS

I_D

500

V

±100

100

4.0

±30

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 2.5A

V_GS= 10V, I_D= 2.5A

±5

A

2.0

3.5

3.0

5.2

1.2

650

250

110

18

1

I_{D (pulse)}

±20

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

P_D

30 (Tc = 25ºC)

W

mJ

A

1.5

Ω

pF

ns

V

2

E_AS

I_AS

35

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

5

150

Tch

Tstg

ºC

I_D= 2.5A, V_DD250V,

R_L= 100Ω, V_GS= 10V,

See Figure 2 on Page 5.

–55 to +150

30

t_{d (off)}

t_f

60

1: P

100µs, duty cycle 1%

W

*

2: V = 30V, L = 2.6mH, I = 5A, unclamped, R = 50Ω,

DD

L

G

65

*

See Figure 1 on Page 5.

V_SD

0.9

2

1.5

I_SD= 5A, V_GS= 0V

t_rr

µs

I_SD= ±100mA, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

5

2.0

10V

5V

V_GS=10V

4

1.5

1.0

0.5

4.8V

3

2

1

0

T_C=125°C

2

4.5V

1

0

25°C

V

_GS= 4V

–55°C

0

5

0

2

4

6

8

10

0

2

4

6

8

10

0

1

2

3

4

V_GS(V)

V_DS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

15

3.5

50

V_DS= 20V

I_D=2.5A

V_GS=10V

3.0

2.5

2.0

1.5

10

T_C= –55°C

10

25°C

5

I_D=5A

1

5

125°C

1.0

0.5

0

0.5

I_D=2.5A

0.1

0.05 0.1

0

0.5

I_D(A)

1

5

2

5

10

20

150

—

50

0

50

100

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

(Tc = 25ºC)

2000

5

30

V_GS= 0V

30

I_D(pulse)max

f =1MHz

1000

500

10

I_Dmax

5

4

3

2

Ciss

20

10

1

100

50

0.5

Coss

Crss

5V,10V

0.1

1

0.05

V_GS= 0V

10

5

Without heatsink

0

0.01

0

0.5

1.0

1.5

1

5

10

50 100

V_DS(V)

1000

10

20

30

40

50

0

50

100

150

V_DS(V)

V_SD(V)

Ta (ºC)

47

2SK3200

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

500

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±30V

(BR)DSS

I_GSS

I_DSS

V_TH

V_DSS

V_GSS

I_D

500

V

±100

100

4.0

±30

V_DS= 500V, V_GS= 0V

V_DS= 10V, I_D= 1mA

V_DS= 20V, I_D= 5A

V_GS= 10V, I_D= 5A

±10

A

2.0

5.0

3.0

9.0

0.85

920

390

190

25

1

I_{D (pulse)}

±40

A

*

Re _(yfs)

R_{DS (on)}

Ciss

Coss

Crss

t_{d (on)}

t_r

S

P_D

35 (Tc = 25ºC)

W

mJ

A

1.1

Ω

pF

ns

V

2

E_AS

I_AS

50

10

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Tch

Tstg

150

ºC

I_D= 5A, V_DD250V,

R_L= 50Ω, V_GS= 10V,

See Figure 2 on Page 5.

–55 to +150

35

t_{d (off)}

t_f

75

1: P

100µs, duty cycle 1%

W

*

2: V = 30V, L = 940µH, I = 10A, unclamped, R = 50Ω,

DD

L

G

55

*

See Figure 1 on Page 5.

V_SD

1.1

80

1.5

I_SD= 10A, V_GS= 0V

I_SD= 5A, V_GS= 0V,

di/dt = 100A/µs

t_rr

ns

48

2SK3332

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

150

max

V_(BR)DSS

I_GSS

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= +20V, –10V

V_DSS

V_GSS

I_D

150

+20, –10

±12

V

±100

100

2.0

I_DSS

V_DS= 150V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 6A

V_GS= 10V, I_D= 6A

V_GS= 4V, I_D= 6A

A

V_TH

1.0

6

1

Re _(yfs)

11

150

170

870

320

210

20

S

I_{D (pulse)}

±48

A

*

200

230

P_D

30 (Tc = 25ºC)

100

W

mJ

A

R_{DS (on)}

mΩ

2

E_AS

I_AS

*

Ciss

Coss

Crss

t_{d (on)}

t_r

pF

ns

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

12

Tch

Tstg

150

ºC

–55 to +150

I_D= 6A, V_DD70V,

R_L= 12Ω, V_GS= 10V,

See Figure 2 on Page 5.

50

1: P

100µs, duty cycle 1%

W

t_{d (off)}

t_f

85

*

2: V = 25V, L = 1.2mH, I = 12A, unclamped, R = 50Ω,

DD

L

G

40

*

See Figure 1 on Page 5.

V_SD

t_rr

1.0

500

1.5

I_SD= 12A, V_GS= 0V

ns

I_SD= ±100mA

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

12

R_{DS (ON)}– I_DCharacteristics (typical)

250

12

10V

V_DS=10V

3.4V

10

8

V_GS=4V

200

150

100

50

3.2V

8

V_GS=10V

3.0V

6

T_C=125°C

4

2.8V

2.6V

4

2

0

2

0

25°C

V

_GS= 2.4V

–55°C

0

12

0

2

4

6

8

10

0

1

2

3

4

5

0

2

4

6

8

10

V_GS(V)

V_DS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

450

50

V_DS=10V

T_C= –55°C

I_D=6A

400

8

6

4

25°C

10

V_GS= 4V

125°C

300

200

100

0

V_GS=10V

1

I_D=12A

I_D=6A

2

0

0.1

0.05 0.1

150

0.5

1

5

10 20

—

50

0

50

100

2

5

10

20

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

12

Safe Operating Area

P

_D– Ta Characteristics

(Tc = 25ºC)

5000

50

V_GS= 0V

I_D(pulse)max

30

f =1MHz

10

8

I_Dmax

10

Ciss

1000

5

500

20

10

6

5V,10V

Coss

Crss

100

50

1

4

0.5

2

V_GS= 0V

Without heatsink

0

10

0

0.1

0

0.5

1.0

1.5

10

20

30

40

50

1

5

10

50 100 200

0

50

100

150

V_DS(V)

V_SD(V)

Ta (ºC)

49

2SK3460

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

150

max

V

nA

µA

V

I_D= 100µA, V_GS= 0V

V_GS= +20V, –10V

(BR)DSS

V_DSS

V_GSS

I_D

150

+20, –10

±18

V

I_GSS

±100

100

2.0

I_DSS

V_DS= 150V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 9A

V_GS= 10V, I_D= 9A

V_GS= 4V, I_D= 9A

A

V_TH

1.0

13

1

Re _(yfs)

20

70

S

I_{D (pulse)}

±72

A

*

95

P_D

35 (Tc = 25ºC)

180

W

mJ

A

R_{DS (on)}

mΩ

80

105

2

E_AS

I_AS

*

Ciss

Coss

Crss

t_{d (on)}

t_r

1900

630

420

25

pF

ns

V

_DS= 10V, f = 1.0MHz,

V_GS= 0V

18

Tch

Tstg

150

ºC

–55 to +150

I_D= 9A, V_DD70V,

R_L= 7.8Ω, V_GS= 10V,

See Figure 2 on Page 5.

70

1: P

100µs, duty cycle 1%

W

t_{d (off)}

t_f

160

75

*

2: V = 25V, L = 930µH, I = 18A, unclamped, R = 50Ω,

DD

Lp

G

*

See Figure 1 on Page 5.

V_SD

t_rr

1.0

620

1.5

I_SD= 18A, V_GS= 0V

ns

I_SD= ±100mA

50

FKV550T

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

50

max

V_(BR)DSS

I_GSS

I_DSS

V

µA

V

I_D= 100µA, V_GS= 0V

V_GS= ±20V

V_DSS

V_GSS

I_D

50

±20

V

±10

100

2.5

V_DS= 50V, V_GS= 0V

V_DS= 10V, I_D= 250µA

V_DS= 10V, I_D= 25A

V_GS= 10V, I_D= 25A

±50

A

V_TH

1.0

20

1

I_{D (pulse)}

±150

A

*

Re _(yfs)

R_{DS (on)}

Ciss

S

P_D

35 (Tc = 25ºC)

150

W

mJ

A

10

2700

1100

500

20

13

mΩ

pF

ns

2

E_AS

I_AS

*

V_DS= 10V, f = 1.0MHz,

V_GS= 0V

Coss

Crss

t_{d (on)}

t_r

50

Tch

Tstg

150

ºC

I

_D= 25A, V_DD12V,

R_L= 0.48Ω, V_GS= 10V

See Figure 2 on Page 5.

–55 to +150

600

300

100

1.0

ns

t_{d (off)}

t_f

ns

1: P

100µs, duty cycle 1%

W

*

2: V = 20V, L = 72µH, I = 50A, unclamped, R = 50Ω,

DD

AS

G

ns

*

See Figure 1 on Page 5.

V_SD

1.5

V

I_SD= 50A, V_GS= 0V

I_D– V_DSCharacteristics (typical)

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

(T = 25°C)

a

(T = 25°C)

a

(T = 25°C)

a

150

50

40

30

20

14

10V

6V

V_GS=10V

4.5V

V_DS=10V

12

10

8

100

4V

T_C=125°C

6

V_GS= 3.5V

50

0

4

10

0

25°C

2

–55°C

0

2

4

6

8

10

0

1

2

3

4

5

6

50

0

10

20

30

40

V_GS(V)

V_DS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V

_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

(T = 25°C)

a

1.0

0.8

0.6

0.4

20

200

V_DS=10V

I_D=25A

V_GS=10V

100

16

12

6

T_C= –55°C

25°C

50

125°C

I_D=50A

I_D=25A

4

0.2

0

10

5

0

1

5

10

50

150

0

4

8

12

16

20

—

50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

(T = 25°C)

c

(T = 25°C)

a

(Single shot pulse)

8000

5000

50

200

40

V_GS= 0V

f =1MHz

V_GS= 0V

I_D(pulse) max

100

50

T

a

= 25°C

40

30

20

10

30

20

10

Ciss

10

5

1000

500

Coss

Crss

1

0.5

Without heatsink

0

100

0

0.1

0

0.2 0.4

0.6

0.8 1.0

1.2

0

50

100

Ta (ºC)

150

10

20

30

40

50

0.1

0.5

1

5

10

50 100

V_DS(V)

V_SD(V)

51

2SJ424

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

max

V_DSS

V_GSS

I_D

–60

V

–60

V

nA

µA

V

I_D= –250µA, V_GS= 0V

(BR) DSS

±

20

I_GSS

500

V_GS

=

20V

±

5

A

I_DSS

–250

–4.0

V_DS= –60V, V_GS= 0V

V_DS= –10V, I_D= –250µA

V_DS= –10V, I_D= –2.5A

V_GS= –10V, I_D= –2.5A

±

I_{D (pulse)}

P_D

20 (Tch 150ºC)

25 (Tc = 25ºC)

150

A

V_TH

–2.0

W

ºC

Re _(yfs)

R_{DS (on)}

Ciss

1.0

1.6

0.35

270

170

75

S

Tch

0.5

Ω

Tstg

–55 to +150

pF

ns

V_DS= –25V, f = 1.0MHz,

V_GS= 0V

Coss

t_on

I_D= –2.5A, V_DD= –30V,

V_GS= –10V,

See Figure 3 on Page 5.

t_off

35

52

2SJ425

Absolute Maximum Ratings

External dimensions

1 ...... FM20

Electrical Characteristics

(Ta = 25ºC)

Ratings

typ

Symbol

Ratings

Unit

Symbol

Unit

Conditions

min

max

V_DSS

V_GSS

I_D

–60

V

–60

V

nA

µA

V

I_D= –250µA, V_GS= 0V

(BR) DSS

±

20

I_GSS

500

V_GS

=

20V

±

8

A

I_DSS

–250

–4.0

V_DS= –60V, V_GS= 0V

V_DS= –10V, I_D= –250µA

V_DS= –10V, I_D= –4.0A

V_GS= –10V, I_D= –4.0A

±

I_{D (pulse)}

P_D

A

V_TH

–2.0

32 (Tch 150ºC)

30 (Tc = 25ºC)

150

W

ºC

Re _(yfs)

R_{DS (on)}

Ciss

1.8

2.8

0.2

580

360

90

S

Tch

0.28

Ω

Tstg

–55 to +150

pF

ns

V_DS= –25V, f = 1.0MHz,

V_GS= 0V

Coss

t_on

I_D= –4.0A, V_DD= –30V,

V_GS= –10V,

See Figure 3 on Page 5.

t_off

45

I_D– V_DSCharacteristics (typical)

10

I

_D– V_GSCharacteristics (typical)

R_{DS (ON)}– I_DCharacteristics (typical)

–

250

8

6

4

= –

10V

V_DS

=

–

V_GS

10V

=

–

7V

V_GS–10V

–

200

150

100

8

6

4

2

0

=

T_C125ºC

– 6V

25ºC

55ºC

–

2

0

50

0

–

5V

–

8

0

2

4

6

8

10

0

2

4

6

8

0

1

2

3

4

5

6

7

V_DS(V)

V_GS(V)

I_D(A)

Re (yfs) – I_DCharacteristics (typical)

V_DS– V_GSCharacteristics (typical)

R_{DS (ON)}– T_CCharacteristics (typical)

10

–

5

400

= –

10V

V_DS

=

–

T_C

55ºC

25ºC

=

I_D– 4A

=

–

V_GS

10V

5

–

4

3

2

300

200

125ºC

1

=

–

I_D

8A

4A

100

0

–1

0.5

0.3

0

–

150

0.1

–0.5

1

5

10

5

10

20

–50

0

50

100

I_D(A)

V_GS(V)

Tc (ºC)

Capacitance – V_DSCharacteristics (typical)

I_DR– V_SDCharacteristics (typical)

Safe Operating Area

P

_D– Ta Characteristics

(Tc = 25ºC)

–

30

–

50

2000

8

I_D(pulse) max

=

V_GS0V

–10V

=

f

1MHz

1000

500

I_Dmax

Ciss

–10

–

6

–

5

20

10

Coss

Crss

–

5V

–4

–1

100

50

–0.5

–

2

0

=

V_GS0V

Without heatsink

0

–0.1

–0.05

20

–10

–20

V_DS(V)

–30

–40

–50

–

4

0

1

2

3

–

1

–

10

– –

50 100

0

50

100

Ta (ºC)

150

0.5

5

V_SD(V)

V_DS(V)

53

Discontinued part guide

Discontinued Products

Substitute Part

Part Number

V

DSS

(V)

I

(A)

D

R_{DS (ON)}max (Ω)

Package

60

15

10

45

3

0.14

0.7

FM20

MT100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

FM100

FM20

2SJ426

—

450

60

2SK979

—

0.002

1.80

1.00

0.55

0.30

0.200

0.050

0.028

0.045

5.0

2SK1193

2SK1367

2SK1368

2SK1369

2SK1370

2SK1711

2SK1713

2SK1714

2SK1715

2SK2156A

2SK2207

2SK2208

2SK2238

2SK2239

2SK2240

2SK2241

2SK2242

2SK2243

2SK2244

2SK2245

2SK2804

—

400

60

2SK3199

2SK2701

2SK2704

2SK2706

2SK2778

—

5

10

15

10

22

30

40

25

3

60

—

60

—

60

—

900

450

2SK2943

2SK2945

2SK2803

2SK3199

2SK2702

2SK2704

2SK2705

2SK3199

5

3.0

1.5

3.50

2.00

1.50

0.95

0.75

0.55

0.45

1.5

3

5

7

10

12

15

5

Not for new design

(V) (A)

Substitute Part

Part Number

V

DSS

I

R_{DS (ON)}max (Ω)

Package

FM20

D

400

2

3.60

2SK1366

2SK2803

54

MEMO

55

Sanken Electric Co., Ltd.

1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo

PHONE: 03-3986-6164

FAX: 03-3986-8637

TELEX: 0272-2323 (SANKEN J)

Overseas Sales Offices

✽Asia

Sanken Electric Singapore Pte. Ltd.

150 Beach Road, #14-03 The Gateway West,

Singapore 0718

PHONE: 291-4755

FAX: 297-1744

Sanken Electric Hong Kong Co., Ltd.

1018 Ocean Centre, Canton Road,

Kowloon, Hong Kong

PHONE: 2735-5262

FAX: 2735-5494

TELEX: 45498 (SANKEN HX)

Sanken Electric Korea Co., Ltd.

SK Life B/D 6F,

168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea

PHONE: 82-2-714-3700

FAX: 82-2-3272-2145

✽North America

Allegro MicroSystems, Inc.

115 Northeast Cutoff, Box 15036

Worcester, Massachusetts 01615, U.S.A.

PHONE: (508)853-5000

FAX: (508)853-7861

✽Europe

Allegro MicroSystems Europe Limited.

Balfour House, Churchfield Road,

Walton-on-Thames, Surrey KT12 2TD, U.K.

PHONE: 01932-253355

FAX: 01932-246622

Contents of this catalog are subject to change due to modification

PRINTED in JAPAN

H1-T03EB0-0011010TA


型号：	2SK3332
厂家：	SANKEN ELECTRIC
描述：	Power Field-Effect Transistor, 12A I(D), 150V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, FM20, 3 PIN 局域网
文件：	总58页 (文件大小：737K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SK3332 [SANKEN]

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