2SD2439P [SANKEN]

Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FM100, TO-3PF, 3 PIN;
2SD2439P
型号: 2SD2439P
厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述:

Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FM100, TO-3PF, 3 PIN

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Equivalent circuit  
C
E
B
Darlington 2 S D2 4 3 9  
(70)  
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588)  
Application : Audio, Series Regulator and General Purpose  
(Ta=25°C)  
(Ta=25°C)  
External Dimensions FM100(TO3PF)  
Absolute maximum ratings  
Electrical Characteristics  
2SD2439  
2SD2439  
100max  
100max  
150min  
5000min  
2.5max  
3.0max  
55typ  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Symbol  
Conditions  
Unit  
Unit  
µA  
µA  
V
±0.2  
5.5  
±0.2  
15.6  
160  
ICBO  
VCB=160V  
±0.2  
V
3.45  
150  
IEBO  
VEB=5V  
V
5
V(BR)CEO  
hFE  
IC=30mA  
V
±0.2  
ø3.3  
10  
1
VCE=4V, IC=7A  
IC=7A, IB=7mA  
IC=7A, IB=7mA  
VCE=12V, IE=2A  
VCB=10V, f=1MHz  
A
a
b
V
V
IB  
VCE(sat)  
VBE(sat)  
fT  
A
PC  
80(Tc=25°C)  
150  
W
°C  
°C  
MHz  
pF  
Tj  
1.75  
2.15  
0.8  
95typ  
Tstg  
COB  
–55 to +150  
+0.2  
-0.1  
1.05  
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)  
Typical Switching Characteristics (Common Emitter)  
+0.2  
±0.1  
1.5  
±0.1  
0.65  
-0.1  
5.45  
5.45  
1.5  
3.35  
4.4  
C
Weight : Approx 6.5g  
a. Type No.  
b. Lot No.  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(mA)  
IB2  
(mA)  
ton  
(µs)  
tstg  
(µs)  
tf  
(µs)  
B
E
70  
10  
7
10  
–5  
7
–7  
0.5typ  
10.0typ  
1.1typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=4V)  
10  
3
10  
8
8
6
4
2
2
6
IC=10A  
IC=7A  
0.6mA  
4
IC=5A  
1
IB=0.4mA  
2
0
0
0
0
2
4
6
0.2 0.5  
1
5
10  
50 100 200  
0
1
2
2.5  
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=4V)  
(VCE=4V)  
3
40000  
70000  
50000  
125˚C  
Typ  
1
10000  
5000  
25˚C  
10000  
5000  
0.5  
–30˚C  
1000  
500  
1000  
02  
0.1  
1
5
10  
50 100  
Time t(ms)  
500 1000 2000  
0.5  
1
5
10  
0.2  
0.5  
1
5
10  
Collector Current IC(A)  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=12V)  
80  
30  
100  
80  
10  
5
60  
40  
Typ  
60  
1
40  
0.5  
Without Heatsink  
Natural Cooling  
20  
20  
0
0.1  
Without Heatsink  
3.5  
0
0.05  
3
5
10  
50  
100  
200  
–0.02  
–0.1  
–1  
Emitter Current IE(A)  
–10  
0
50  
100  
150  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
152  

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