STM9926 [SAMHOP]
Dual N-Channel E nhancement Mode F ield E ffect Transistor; 双N信道E nhancement模式F屈服ê ffect晶体管
| 型号： | STM9926 |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | Dual N-Channel E nhancement Mode F ield E ffect Transistor |
| 文件： | 总7页 (文件大小：668K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TM9926
S amHop Microelectronics C orp.
J an. 10 2008 ver1.0
Dual N-C hannel E nhancement Mode Field E ffect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
VDS S
ID
R DS (ON) ( m
Ω
) Max
28 @ VG S = 4.0V
38 @ VG S = 2.5V
20V
S urface Mount P ackage.
E S D P rotected.
6.5A
D1 D1 D2 D2
8
7
6
5
S O-8
1
2
3
4
1
S 1 G 1 S 2 G 2
ABS OLUTE MAXIMUM R ATING S (T
P arameter
A
=25 C unless otherwise noted)
Limit
Unit
V
S ymbol
Drain-S ource Voltage
20
V
V
DS
G S
10
V
G ate-S ource Voltage
I
D
Drain C urrent-C ontinuous a @ T
-P ulsed b
J
=25 C
6.5
30
1.7
2
A
A
I
DM
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
A
I
S
P
D
W
C
Operating J unction and S torage
Temperature R ange
T
J
, TS TG
-55 to 150
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-Ambient a
R
J A
62.5
C/W
1
S TM9926
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
=
Typ C Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
V
G S 0V, ID 250uA
=
=
20
Drain-S ource Breakdown Voltage
V
BVDS S
uA
uA
I
I
DS S
G S S
V
V
DS 16V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
10V,VDS 0V
=
10
=
b
ON C HAR AC TE R IS TIC S
1.5
28
38
V
G S (th)
0.5
0.9
23
30
16
V
G ate Threshold Voltage
V
V
V
DS =VG S , I
D
= 250uA
=
=
G S 4.0V, I
D
6.5A
5A
m ohm
m ohm
S
Drain-S ource On-S tate R esistance
R
DS (ON)
=
=
G S 2.5V, I
D
gFS
Forward Transconductance
=
V
DS
5.0V, I 6.5A
=
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
540
160
100
P
P
P
F
F
F
C
IS S
V
DS =8V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
15
20
Turn-On Delay Time
t
D(ON)
ns
ns
ns
ns
nC
V
DD = 10V,
= 1A,
G E N = 4.5V,
I
D
R ise Time
tr
V
R
R
Turn-Off Delay Time
Fall Time
tD(OFF)
36
11
L
= 10 ohm
G E N = 10 ohm
tf
V
V
DS =10V, I
DS =10V, I
D
=6.5A,VG S =4V
=6.5A,VGS =2.5V
6.4
Total G ate C harge
Q
g
D
nC
4.6
1.1
2.8
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
nC
nC
V
V
DS =10V, I
G S =4V
D
= 6.5 A
gd
2
S TM9926
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
Diode F orward Voltage
V
S D
V
G S = 0V, Is =1.7A
1.2
0.72
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
15
12
20
VG S =8V
VG S =3V
16
VG S =2.5V
VG S =2V
9
6
12
8
Tj=125 C
-55 C
4
3
0
VG S =1.5V
2.5
25 C
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
0.5
1.0
1.5
2.0
3.0
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
60
1.5
1.4
1.3
1.2
1.1
1.0
0
50
40
V
G S =4V
I
D=6.5A
VG S =2.5V
VG S =4V
30
20
V
G S =2.5V
=5A
I
D
10
1
1
4
8
12
16
20
0
150
25
50
75
100
125
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
S TM9926
1.20
1.15
1.4
ID=250uA
V
DS =V G S
1.2
I
D=250uA
1.0
0.8
0.6
0.4
1.10
1.05
1.00
0.95
0.90
0.2
0.0
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
60
20.0
ID=6.5A
50
40
125 C
10.0
5.0
25 C
30
20
25 C
75 C
125 C
75 C
10
0
1.0
0
1
2
4
6
8
0
0.3
0.6
0.9
1.2
1.5
VG S , G ate-S ource Voltage (V)
V
S D, B ody Diode F orward V oltage (V )
Figure 7. On-R esistance vs.
G ate-S ource Voltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S TM9926
5
4
3
2
600
500
400
C iss
V
I
DS =10V
=6.5A
D
300
C oss
200
C rss
1
0
100
6
0
0
2
4
8
10
12
6
3
0
1
2
4
5
6
7
8
Qg, T otal G ate C harge (nC )
VDS , Drain-to S ource Voltage (V)
F igure 10. G ate C harge
Figure 9. C apacitance
50
30
10
600
t
i
m
1
i
0
L
m
)
Tr
s
N
O
(
R DS
1
100
60
0
0
m
TD(off)
TD(on)
s
1
Tf
s
D
C
1
10
0.1
V
G S =10V
S ingle P ulse
=25 C
V DS =10V ,ID=1A
V G S =4.5V
1
T
A
0.03
600
1
6
10
60 100 300
0.1
1
10
60
V
DS , Drain-S ource V oltage (V )
R g, G ate R esistance (
Ω
)
F igure 12. Maximum S afe
F igure 11.switching characteristics
Operating Area
9
1
0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R thJ A (t)=r (t) * R thJ A
th
2. R J A=S ee Datasheet
3. TJ M-TA = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
S TM9926
PAC KAG E OUTLINE DIME NS IONS
S O-8
1
L
E
D
0.015X45°
0.008
TYP.
e
B
0.016 TYP.
0.05 TYP.
H
MILLIME TE R S
INC HE S
S YMBOLS
MIN
MAX
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0°
MAX
0.069
0.010
0.196
0.157
A
A1
D
E
1.75
0.25
4.98
3.99
6.20
1.27
8°
1.35
0.10
4.80
3.81
5.79
0.41
0°
H
0.244
0.050
8°
L
6
S TM9926
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
A0
E2
P2
B0
D0
D1
E
E1
P0
8.0
P1
4.0
T
K0
PACKAGE
ψ1.5
+ 0.1
- 0.0
SOP 8N
150㏕
ψ1.5
(MIN)
5.5
±0.05
0.3
±0.05
12.0
±0.3
2.0
±0.05
5.20
2.10
1.75
6.40
SO-8 Reel
UNIT:㎜
REEL SIZE
H
K
R
TAPE SIZE
M
N
W1
G
S
W
V
2.0
±0.15
62
±1.5
12.4
+ 0.2
330
± 1
16.8
- 0.4
ψ12.75
+ 0.15
12 ㎜
ψ330
7
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