STM9433 [SAMHOP]
P-Channel E nhancement Mode Field Effect Transistor; P沟道é nhancement模式场效应晶体管
| 型号： | STM9433 |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | P-Channel E nhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：652K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S TM9433
S amHop Microelectronics C orp.
P reliminary May.21, 2004
P -C hannel E nhancement Mode Field E ffect Transistor
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
VDS S
ID
R DS (ON) ( m
Ω
) Max
50 @ VG S = -4.5V
80 @ VG S = -2.5V
-5A
-18V
S urface Mount P ackage.
D
8
D
7
D
6
D
5
S O-8
1
1
2
3
4
S
S
S
G
ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)
A
Limit
18
Unit
V
P arameter
S ymbol
Drain-S ource Voltage
V
V
DS
G S
V
G ate-S ource Voltage
12
I
D
Drain C urrent-C ontinuous a @ T
-P ulsed b
J
=125 C
A
-5
-12.5
-1.7
2.5
A
I
DM
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
A
I
S
P
D
W
C
Operating J unction and S torage
Temperature R ange
T
J
, TS TG
-55 to 150
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-Ambient a
C
/W
R
J A
50
1
S TM9433
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
=
Typ C Max
P arameter
C ondition
Min
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
-18
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS -16V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
=
=
G S
12V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
-1.5
V
G S (th)
-0.6
-8
V
G ate Threshold Voltage
V
V
V
V
V
DS =VG S , I
=
D
= -250uA
=
-0.96
m-ohm
m-ohm
50
80
G S -4.5V, I
G S = -2.5V, I
D
D
-5.1A
Drain-S ource On-S tate R esistance
R
DS (ON)
= -2.0A
DS = -5V, VG S = -4.5V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
6
Forward Transconductance
=
=
- 5.3A
DS -15V, I
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
995
150
87
P
P
P
F
F
F
C
IS S
V
DS =-10V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
6.1
14.8
59
Turn-On Delay Time
t
D(ON)
ns
ns
V = -10V
D
I
V
R
D
= -1A
R ise Time
tr
G E N = -4.5V
G E N = 6 ohm
Turn-Off Delay Time
Fall Time
tD(OFF)
ns
ns
tf
29.6
9.6
Q
g
nC
nC
nC
Total G ate C harge
G ate-S ource C harge
G ate-Drain C harge
V
V
DS =-10V, I
G S =-4.5V
D
= -1A
1.2
Q
Q
gs
2.8
gd
2
S TM9433
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
C
Typ Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
Diode F orward Voltage
V
S D
V
G S = 0V, Is =-1.7A
-1.2
-0.82
Notes
a.S urface Mounted on FR 4 Board, t <=10sec.
b.P ulse Test:P ulse Width<=300us, Duty C ycle<= 2%.
c.G uaranteed by design, not subject to production testing.
25
20
15
10
25
-VG S =3V
25 C
-VG S =10,9,8,7,6,5,4V
20
15
-VG S =2.5V
-VG S =2V
125 C
-55 C
10
5
5
0
0
0
6
0.3
0.6
0.9
1.8
2
4
8
12
1.2
1.5
0
10
-VG S , G ate-to-S ource Voltage (V)
-VDS , Drain-to-S ource Voltage (V)
Figure 2. Transfer C haracteristics
Figure 1. Output C haracteristics
1.8
1.6
1.4
1.2
1500
1250
V
G S =-4.5V
=-5.1A
I
D
C iss
1000
750
500
1.0
0.8
250
C oss
C rss
0
0
0.6
-55 -25
0
25
125
5
10
15
20
25
30
50
75
100
T j, J unction T emperature ( C )
-VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Temperature
Figure 3. C apacitance
3
S TM9433
1.3
1.15
1.10
1.05
V
DS =V G S
ID=-250uA
1.2
I
D
=-250uA
1.1
1.0
0.9
1.00
0.95
0.90
0.85
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
18
15
12
20.0
V
G S =0V
10.0
8
4
V
DS =-15V
15
1.0
0
0
5
10
20
0.4
0.6
0.7
0.9
1.1
1.3
-IDS , Drain-S ource C urrent (A)
-V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5
30
V
DS =-10V
=-1A
t
i
4
3
2
10
1
I
D
m
1
i
0
L
m
)
s
N
O
1
1
(
0
s
R DS
0
m
s
D
C
0.1
V
G S =-4.5V
S ingle P ulse
=25 C
1
0
T
A
0.03
0.1
1
10
30 50
0
2
6
8
10 12 14 16
4
Qg, T otal G ate C harge (nC )
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
S TM9433
-VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
10%
VG S
R G E N
G
90%
50%
50%
S
IN
10%
INVE R TE D
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
2
1
Duty C ycle=0.5
0.2
DM
P
0.1
0.1
1
t
0.05
2
t
1. R thJ A (t)=r (t) * R thJ A
2. R thJ A=S ee Datasheet
3. TJ M-TA = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
0.02
S ingle P ulse
10-3
0.01
10-4
10-2
10-1
1
10
100
S quare Wave P ulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance C urve
5
S TM9433
PAC KAG E OUTLINE DIME NS IONS
S O-8
1
L
E
D
0.015X45°
0.008
TYP.
e
B
0.016 TYP.
0.05 TYP.
H
MILLIME TE R S
INC HE S
S YMBOLS
MIN
MAX
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0°
MAX
0.069
0.010
0.196
0.157
A
A1
D
E
1.75
0.25
4.98
3.99
6.20
1.27
8°
1.35
0.10
4.80
3.81
5.79
0.41
0°
H
0.244
0.050
8°
L
6
S TM9433
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:㎜
A0
E2
P2
B0
D0
D1
E
E1
P0
8.0
P1
4.0
T
K0
PACKAGE
ψ1.5
+ 0.1
- 0.0
SOP 8N
150㏕
ψ1.5
(MIN)
5.5
±0.05
0.3
±0.05
12.0
±0.3
2.0
±0.05
5.20
2.10
1.75
6.40
SO-8 Reel
UNIT:㎜
REEL SIZE
H
K
R
TAPE SIZE
M
N
W1
G
S
W
V
2.0
±0.15
62
±1.5
12.4
+ 0.2
330
± 1
16.8
- 0.4
ψ12.75
+ 0.15
12 ㎜
ψ330
7
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