RB225NS-40 [ROHM]
Schottky Barrier Diode; 肖特基二极管
| 型号： | RB225NS-40 |
| 厂家： | 
ROHM |
| 描述： | Schottky Barrier Diode |
| 文件： | 总5页 (文件大小：1177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RB225NS-40
lApplications
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
General rectification
RB225
NS40
lFeatures
①
1)Cathode common dual type.(LPDS)
2)Low IR
lConstruction
lStructure
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
Manufacture Year, Week and Day
①
①
② ③
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Tc=25C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
40
40
V
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
30
Io
IFSM
Tj
A
100
A
150
C
C
Storage temperature
Tstg
-40 to +150
(*1) 60Hz half sin wave, vesistive load at Tc=70°C. 1/2 Io per diode
lElectrical characteristics (Tj=25C)
Parameter
Forward voltage
Symbol
VF
Min.
Typ.
0.53
0.08
-
Max.
0.63
0.5
Unit
V
Conditions
IF=15A
-
-
-
IR
VR=40V
Reverse current
mA
°C/W
Thermal resistance
2.00
Rth (J-C)
junction to case
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.A
1/4
Data Sheet
RB225NS-40
ꢀ
100
1000000
100000
10000
1000
100
Ta=125°C
Ta=150°C
Ta=150°C
10
1
Ta=125°C
Ta=75°C
Ta=75°C
Ta=25°C
Ta=25°C
10
Ta=-25°C
0.1
0.01
Ta=-25°C
1
0.1
0
100
200
300
400
500
600
0
5
10
15
20
25
30
35
40
REVERSE VOLTAGE：VR(V)
FORWARD VOLTAGE：VF(mV)
VR-IR CHARACTERISTICS
VF-IF CHARACTERISTICS
560
550
540
530
520
510
10000
1000
100
f=1MHz
Ta=25°C
IF=15A
n=30pcs
AVE:534.5mV
10
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1000
900
800
700
600
500
400
300
200
100
0
2550
2540
2530
2520
2510
2500
2490
2480
2470
2460
2450
Ta=25°C
f=1MHz
VR=0V
Ta=25°C
VR=40V
n=30pcs
n=10pcs
AVE:2515.6pF
AVE:78.7mA
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
Data Sheet
RB225NS-40
ꢀ
300
250
200
150
100
50
50
45
40
35
30
25
20
15
10
5
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1cyc
8.3ms
AVE:27.4ns
AVE:176.0A
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
1000
100
10
IFSM
IFSM
time
8.3ms
8.3ms
1cyc.
100
10
1
10
100
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10
1
50
40
30
20
10
0
D=1/2
Rth(j-a)
Rth(j-c)
Sin(θ＝180)
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0
10
20
30
40
50
TIME:t(s)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Rth-t CHARACTERISTICS
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.10 - Rev.A
Data Sheet
RB225NS-40
ꢀ
50
40
30
20
10
0
10
8
D.C.
D=1/2
6
D=1/2
Sin(θ＝180)
DC
4
Io
0A
0V
Sin(θ＝180)
2
VR
t
D=t/T
VR=20V
Tj=150°C
T
0
0
10
20
30
40
0
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
30
25
20
15
10
5
No break at 30kV
AVE:25.7kV
0
C=200pF
C=100pF
R=0Ω
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
N o t e s
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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