RB225T-40_11 [ROHM]
Schottky Barrier Diode; 肖特基二极管
| 型号： | RB225T-40_11 |
| 厂家： | 
ROHM |
| 描述： | Schottky Barrier Diode |
| 文件： | 总4页 (文件大小：986K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RB225T-40
Applications
Dimensions(Unit : mm)
Structure
Switching power supply
4.5±0.3
ꢀꢀꢀ 0.1
2.8±0.2
ꢀꢀꢀ 0.1
10.0±0.3
ꢀꢀꢀ 0.1
(1) (2) (3)
Features
1)Cathode common type.(TO-220)
2)Low IR
3)High reliability
①
Construction
1.2
Silicon epitaxial planer
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
Manufacture Date
①
Absolute maximum ratings(Ta=25C)
Parameter
Limits
40
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
40
V
Average rectified forward current(*1)
Forward current surge peak （60Hz・1cyc）(*1)
Junction temperature
30
Io
A
100
150
IFSM
Tj
A
C
C
Storage temperature
40 to 150
Tstg
(*1)Tc=105Cmax Per chip:Io/2
Electrical characteristics(Ta=25C)
Parameter
Symbol
VF
Min.
Typ.
Max.
0.63
Unit
V
Conditions
Forward voltage
Reverse current
Thermal impedance
( ) : tentative
-
-
-
-
-
-
IF=15A
IR
500
μA
VR=40V
θjc
(1.75)
junction to case
C/W
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2011.04 - Rev.A
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1/3
Data Sheet
RB225T-40
Electrical characteristic curves
10000
1000
100
10
1000000
100000
10000
1000
100
100
Ta=150C Ta=125C
f=1MHz
Ta=150C
Ta=125C
Ta=75C
10
1
Ta=75C
Ta=25C
Ta=25C
Ta=-25C
Ta=-25C
10
0.1
0.01
1
1
0.1
0
5
10
15
20
25
30
0
100
200
300
400
500
600
0
5
10
15
20
25
30
35
40
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
2550
2540
2530
2520
2510
2500
2490
2480
2470
2460
2450
1000
900
800
700
600
500
400
300
200
100
0
560
550
540
530
520
510
Ta=25C
VR=40V
n=30pcs
Ta=25C
IF=15A
Ta=25℃
f=1MHz
VR=0V
n=30pcs
n=10pcs
AVE:2515.6pF
AVE:78.7uA
AVE:534.5mV
V
F DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
300
250
200
150
100
50
50
45
40
35
30
25
20
15
10
5
Ta=25C
IF=0.5A
Ifsm
Ifsm
1cyc
8.3ms 8.3ms
1cyc
IR=1A
8.3ms
AVE:27.4ns
Irr=0.25*IR
n=10pcs
AVE:176.0A
0
0
1
10
NUMBER OF CYCLES
FSM-CYCLE CHARACTERISTICS
100
IFSM DISPERSION MAP
trr DISPERSION MAP
I
100
10
1
1000
100
10
50
40
30
20
10
0
IM=100mA
1ms
time
300us
Mounted on epoxy board
IF=10A
D=1/2
Ifsm
t
Rth(j-a)
Rth(j-c)
DC
Sin(=180)
0.1
0
10
20
30
40
50
1
10
100
0.001 0.01
0.1
1
10
100
1000
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
TIME:t(ms)
FSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
I
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.A
Data Sheet
RB225T-40
50
40
30
20
10
0
10
8
50
40
30
20
10
0
Io
0A
0V
D=1/2
VR
t
DC
DC
D=t/T
D=1/2
VR=20V
Tj=150C
T
6
Sin(=180)
D=1/2
DC
4
Io
0A
0V
Sin(=180)
VR
2
0
t
Sin(=180)
D=t/T
VR=20V
Tj=150C
T
0
10
20
30
40
0
25
50
75
100
125
150
0
25
50
75
100
125
150
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(C)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
Derating Curve"(Io-Ta)
30
25
20
15
10
5
No break at 30kV
AVE:25.7kV
0
C=100pF
C=200pF
R=1.5k
R=0
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.A
Notice
N o t e s
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http://www.rohm.com/contact/
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R1120A
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