RB225T-60FH [ROHM]
暂无描述;型号: | RB225T-60FH |
厂家: | ROHM |
描述: | 暂无描述 整流二极管 肖特基二极管 局域网 |
文件: | 总4页 (文件大小:985K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
Schottky barrier diode
RB225T-60
Applications
Dimensions (Unit : mm)
Structure
Switching power supply
4.5±0.3
ꢀꢀꢀ 0.1
2.8±0.2
ꢀꢀꢀ 0.1
10.0±0.3
ꢀꢀꢀ 0.1
Features
(1) (2) (3)
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
①
1.2
1.3
Construction
Silicon epitaxial planar
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
①
Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter
Limits
60
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
60
V
30
Average rectified forward current(*1)
Io
A
100
150
IFSM
Tj
Forward current surge peak (60Hz/1cyc) (*1)
Junction temperature
A
C
C
Storage temperature
40 to 150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=108C
Electrical characteristic (Ta=25C)
Parameter
Forward characteristics
Conditions
IF=15A
Symbol
Min.
Typ.
Max.
0.63
600
Unit
V
VF
IR
-
-
-
-
-
-
Reverse characteristics
Thermal impedance
μA
VR=60V
1.75
junction to case
jc
C/W
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2011.04 - Rev.C
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Data Sheet
RB225T-60
ꢀ
Electrical characteristic curves
Ta=150C Ta=125C
1000000
100000
10000
1000
100
10000
1000
100
10
100
f=1MHz
Ta=150C
10
Ta=75C
Ta=25C
Ta=125C
Ta=-25C
Ta=25C
Ta=75C
1
0.1
Ta=-25C
10
1
1
0.1
0.01
0
5
10
15
20
25
30
0
10
20
30
40
50
60
0
100 200
300
400
500 600
700
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
VF-IF CHARACTERISTICS
600
590
580
570
560
550
500
450
400
350
300
250
200
150
100
50
2200
2150
2100
2050
2000
1950
1900
Ta=25C
IF=15A
Ta=25C
VR=60V
n=30pcs
Ta=25C
f=1MHz
VR=0V
n=30pcs
n=10pcs
AVE:70.1uA
AVE:2030.9pF
AVE:580.0mV
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
30
25
20
15
10
5
1000
100
10
Ta=25C
IF=0.5A
1cyc
Ifsm
Ifsm
IR=1A
8.3ms
8.3ms 8.3ms
1cyc
Irr=0.25*IR
n=10pcs
AVE:176.0A
AVE:23.3ns
1
0
0
1
10
NUMBER OF CYCLES
100
trr DISPERSION MAP
IFSM DISPERSION MAP
IFSM-CYCLE CHARACTERISTICS
50
40
30
20
10
0
100
10
1
1000
100
10
IM=100mA
1ms
IF=10A
Ifsm
DC
t
time
300us
D=1/2
Rth(j-a)
Rth(j-c)
Sin(=180)
0.1
1
10
100
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
TIME:t(ms)
FSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
I
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© 2011 ROHM Co., Ltd. All rights reserved.
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2011.04 - Rev.C
Data Sheet
RB225T-60
ꢀ
80
70
60
50
40
30
20
10
0
30
25
20
15
80
70
60
50
40
30
20
10
0
Io
0A
0V
Io
0A
0V
VR
t
VR
D=t/T
t
DC
D=t/T
VR=30V
Tj=150C
VR=30V
Tj=150C
T
Sin(=180)
D=1/2
T
DC
D=1/2
D=1/2
10
DC
Sin(=180)
5
0
Sin(=180)
0
10
20
30
40
50
60
0
25
50
75
100
125
150
0
25
50
75
100
125
150
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(C)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Ta)
Derating Curve"(Io-Tc)
30
25
20
15
10
5
No break at 30kV
AVE:18.5kV
0
C=200pF
C=100pF
R=0
R=1.5k
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.C
Notice
N o t e s
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More detail product informations and catalogs are available, please contact us.
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