RB061US-30 [ROHM]
Schottky Barrier Diode; 肖特基二极管
| 型号： | RB061US-30 |
| 厂家： | 
ROHM |
| 描述： | Schottky Barrier Diode |
| 文件： | 总5页 (文件大小：1114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RB061US-30
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
General rectification
Features
1)Small power mold type. (TSMD8)
2)Low VF
●
3)High reliability
TSMD8
Structure
(7) (6) (5)
(8）
ROHM : TSMD8
Manufacture Date
Silicon epitaxial planer
Structure
●
1pin mark
（1）（2（）3）（4）
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
30
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
30
V
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
2
Io
IFSM
Tj
A
8
A
125
°C
°C
-
+
Storage temperature
Tstg
40 to 125
(*1)Mounted on epoxy board. 180° Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF1
VF2
IR
Min.
Typ.
0.30
0.35
280
80
Max.
0.35
0.40
900
-
Unit
V
Conditions
IF=1.0A
IF=2.0A
VR=15V
-
-
-
-
-
Forward voltage
V
Reverse current
μA
pF
ns
VR=20V, f=1MHz
IF=0.5A, IR=1A, Irr=0.25*IR
Capacitance between terminal
Reverse recovery time
Ct
trr
-
20
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.09 - Rev.A
1/4
Data Sheet
RB061US-30
ꢀ
10
1000
100
10
Ta=75°C
Ta=125°C
Ta=125°C
1
Ta=75°C
Ta=25°C
0.1
0.01
1
Ta=25°C
0.1
Ta=−25°C
Ta=−25°C
0.01
0.001
0.001
0
100
200
300
400
500
0
5
10
15
20
25
30
FORWARD VOLTAGE：VF(mV)
REVERSE VOLTAGE：VR(V)
VF-IF CHARACTERISTICS
VR-IR CHARACTERISTICS
1000
100
10
400
390
380
370
360
350
f=1MHz
Ta=25°C
VF=2A
n=30pcs
AVE:357.7mV
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
300
250
200
150
100
600
590
580
570
560
550
540
530
520
510
500
Ta=25°C
f=1MHz
VR=0V
Ta=25°C
VR=15V
n=30pcs
n=10pcs
AVE:147.5μA
AVE:514.4pF
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.09 - Rev.A
Data Sheet
RB061US-30
ꢀ
200
175
150
125
100
75
30
25
20
15
10
5
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1cyc
8.3ms
AVE:58.5A
AVE:8.2ns
50
25
0
0
I
FSM DISPERSION MAP
trr DISPERSION MAP
100
80
60
40
20
0
100
80
IFSM
IFSM
t
8.3ms 8.3ms
1cyc
60
40
20
0
1
10
100
1
10
100
NUMBER OF CYCLES
TIME:t(ms)
IFSM-CYCLE CHARACTERISTICS
IFSM-t CHARACTERISTICS
1000
2
1.8
1.6
1.4
1.2
1
Mounted on epoxy board
Rth(j-a)
D=1/2
100
10
1
Rth(j-c)
Sin(θ＝180)
0.8
0.6
0.4
0.2
0
DC
0.001
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
2
2.5
3
3.5
4
TIME:t(s)
AVERAGE RECTIFIED
Rth-t CHARACTERISTICS
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.09 - Rev.A
Data Sheet
RB061US-30
ꢀ
0.015
0.01
4
3.5
3
Io
0A
0V
DC
VR
t
D=t/T
VR=15V
Tj=125°C
T
D=1/2
2.5
2
DC
1.5
1
0.005
Sin(θ＝180)
D=1/2
Sin(θ＝180)
0.5
0
0
0
25
50
75
100
125
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.09 - Rev.A
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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