RB063L-30 [DIODES]
Schottky barrier diode; 肖特基二极管
| 型号： | RB063L-30 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Schottky barrier diode |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB063L-30
Diodes
Schottky barrier diode
RB063L-30
zExternal dimensions (Units : mm)
zApplications
High frequency rectification
For switching power supply
1.5±0.2
CATHODE MARK
zFeatures
1) Compact power mold type. (PMDS)
2) Ultra low VF / Low IR.
3) VRM=30V guaranteed.
5
5
+0.02
−0.1
0.1
2.0±0.2
2.6±0.2
zConstruction
Silicon epitaxial planar
ROHM : PMDS
EIAJ : −
JEDEC : SOD-106
Date of manufacture EX. 1999.12 → 9, C
zAbsolute maximum ratings (Ta=25°C)
Parameter
Peak reverse voltage
Symbol
Limits
Unit
V
VRM
30
VR
30
V
DC reverse voltage
I
O
2
A
Mean rectifying current
Peak forward surge current (60Hz·1
Junction temperature
)
I
FSM
70
A
Tj
125
°C
°C
Tstg
−40 +125
Storage temperature
180° half sine wave when mounted on glass epoxy PCBs.
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
Min.
−
Typ.
−
Max.
0.395
200
Unit
Conditions
V
F
V
I
F
=2.0A
=30V
I
R
−
−
µA
V
R
RB063L-30
Diodes
zElectrical characteristic curves (Ta=25°C)
1000
10
100m
Ta=125°C
Ta=75°C
10m
1m
1
100m
10m
100µ
10µ
1µ
Ta=25°C
100
1m
0
10
20
30
0
0.1
0.2
0.3
0.4
(V)
0.5
0
10
20
30
(V)
40
REVERSE VOLTAGE : V
R
(V)
FORWARD VOLTAGE :
V
F
REVERSE VOLTAGE : V
R
Fig.3 Capacitance between
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
terminals characteristics
5.0
5.0
4.0
3.0
2.0
1.0
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
DC
I
F
I
F
D=0.8
I
O
I
O
Tp
Tp
D
D=0.5
T
4.0
3.0
2.0
1.0
0
T
sine
D
=Tp / T
VR=VRM / 2
=
Tp / T
D=0.3
V
R
=V
RM / 2
DC
DC
D=0.2
D=0.8
D=0.8
D=0.1
D=0.5
D=0.05
D=0.5
sine
sine
D=0.3
D=0.2
D=0.3
D=0.2
I
F
I
O
D=0.1
D=0.1
Tp
D
T
D=0.05
D=0.05
=Tp / T
Tj=Tj Max.
0
25
50
75
100
°C
125
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
25
50
75
100
125
AVERAGE RECTIFIED FORWARD CURRENT : I (A)
O
AMBIENT TEMPERATURE : Ta (°C
)
LEAD TEMPERATURE : T
L
(
)
Fig.5 Derating curve (I
O
- T
L)
Fig.6 Forward power dissipation
characteristics
Fig.4 Derating curve (I - Ta)
O
(When mounted on
alumina PCBs)
(When mounted on
alumina PCBs)
5.0
0.30
0.25
0.20
0.15
0.10
0.05
0
V
R
I
F
I
O
D=0.05
D=0.1
D=0.2
D=0.3
D=0.5
DC
4.0
3.0
2.0
1.0
0
Tp
D
Tj
=
Tj Max.
T
0
=
Tp / T
VR=V
RM / 2
DC
V
R
Tp
T
D=0.8
D=0.5
Tj=
Tj Max.
Tp / T
D=
sine
D=0.3
D=0.2
sine
D=0.1
D=0.05
D=0.8
0
25
50
75
100
125
0
2
4
6
8
10 12 14 16 18 20
AMBIENT TEMPERATURE : Ta (°C)
REVERSE VOLTAGE : V V)
R
(
Fig.8 Derating curve (IO - Ta)
Fig.7 Reverse power dissipation
characteristics
(when mounted on glass
epoxy PCBs)
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