RB068L-40 [ROHM]
Schottky Barrier Diode; 肖特基二极管
| 型号： | RB068L-40 |
| 厂家： | 
ROHM |
| 描述： | Schottky Barrier Diode |
| 文件： | 总5页 (文件大小：1157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RB068L-40
lApplications
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
General rectification
2.0
2.6±0.2
lFeatures
1)Small power mold type. (PMDS)
2)Ultra Low IR
2
7
0.1±0.02
ꢀꢀꢀ 0.1
3)High reliability
①
②
PMDS
2.0±0.2
1.5±0.2
lStructure
Silicon epitaxial planer
lStructure
ROHM : PMDS
JEDEC : SOD-106
①
②
dot (year week factory)
lTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ 1.55±0.05
φ 1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
40
40
V
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)
Junction temperature
2
40
Io
IFSM
Tj
A
A
125
C
C
Storage temperature
Tstg
-40 to +150
(*1)Mounted on epoxy board. 180°Half sine wave
lElectrical characteristics (Ta=25C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
0.69
1
Unit
V
Conditions
VF
IR
IF=2.0A
VR=40V
-
-
-
-
Reverse current
mA
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.12 - Rev.A
1/4
Data Sheet
RB068L-40
ꢀ
10000
1000
1000
100
10
Ta=150°C
Ta=150°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=125°C
Ta=75°C
100
10
1
1
Ta=25°C
0.1
Ta=-25°C
0.01
0.001
0.1
0
100
200
300
400
500
600
700
0
10
20
30
40
REVERSE VOLTAGE：VR(V)
FORWARD VOLTAGE：VF(mV)
VR-IR CHARACTERISTICS
VF-IF CHARACTERISTICS
1000
100
10
700
680
660
640
620
600
580
560
540
f=1MHz
Ta=25°C
IF=2A
n=30pcs
AVE:621.1mV
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
600
500
400
300
200
100
Ta=25°C
f=1MHz
VR=0V
Ta=25°C
VR=40V
n=30pcs
n=10pcs
AVE:55.667nA
AVE:328.0pF
IR DISPERSION MAP
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.12 - Rev.A
Data Sheet
RB068L-40
ꢀ
30
25
20
15
10
5
200
150
100
50
Ta=25°C
1cyc
Ifsm
IF=0.1A
IR=0.11A
Irr=0.1*IR
n=10pcs
8.3ms
AVE:111.0A
AVE:16.2ns
0
0
trr DISPERSION MAP
IFSM DISPERSION MAP
300
250
200
150
100
50
200
150
100
50
Ifsm
Ifsm
t
8.3ms 8.3ms
1cyc
0
1
0
10
100
1
10
100
TIME:t(ms)
NUMBER OF CYCLES
IFSM-t CHARACTERISTICS
IFSM-CYCLE CHARACTERISTICS
3
2
1
0
1000
Mounted on epoxy board
Rth(j-a)
Rth(j-c)
100
10
1
D=1/2
Sin(θ＝180)
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0
1
2
3
4
5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.12 - Rev.A
Data Sheet
RB068L-40
ꢀ
0.05
0.04
0.03
0.02
5
4
3
2
1
0
Io
0A
0V
VR
t
D=t/T
VR=20V
Tj=150°C
T
DC
D=1/2
DC
D=1/2
Sin(θ＝180)
0.01
0
Sin(θ＝180)
0
25
50
75
100
125
150
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
5
4
3
2
1
0
30
25
20
15
10
5
Io
0A
0V
No break at 30kV
VR
t
D=t/T
VR=20V
Tj=150°C
T
DC
D=1/2
AVE:17.6kV
Sin(θ＝180)
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
0
0
25
50
75
100
125
150
ESD DISPERSION MAP
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.12 - Rev.A
Notice
N o t e s
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© 2011 ROHM Co., Ltd. All rights reserved.
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