RB068L100TE25 [ROHM]
Schottky Barrier Diode; 肖特基二极管型号: | RB068L100TE25 |
厂家: | ROHM |
描述: | Schottky Barrier Diode |
文件: | 总5页 (文件大小:382K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RB068L100
lApplications
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
General rectification
2.0
2.6±0.2
lFeatures
1)Small power mold type. (PMDS)
2)High reliability.
2
2
0.1±0.02
ꢀꢀꢀ 0.1
①
②
3)Low IR.
4)AEC-Q101 qualified
PMDS
2.0±0.2
1.5±0.2
lConstruction
Silicon epitaxial planer
lStructure
ROHM : PMDS
JEDEC : SOD-106
Manufacture Date
①
②
lTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ 1.55±0.05
φ 1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
100
100
V
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)
Junction temperature
2
60
Io
IFSM
Tj
A
A
150
C
C
Storage temperature
Tstg
-40 to +150
(*1)Mounted on epoxy board,60Hz half sine wave, Tc=83°C Max.
lElectrical characteristics (Ta=25C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
0.80
50
Unit
V
Conditions
VF
IR
IF=2.0A
VR=100V
-
-
-
-
Reverse current
μA
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.B
1/4
Data Sheet
RB068L100
ꢀ
10
1
1000
100
10
Tj=150°C
Tj=125°C
Tj=150°C
Tj=75°C
Tj=125°C
Tj=75°C
1
0.1
0.01
Tj=25°C
Tj=25°C
0.1
Tj=-40°C
0.01
0.001
Tj=-40°C
600
0.001
0
20
40
60
80
100
0
200
400
800
FORWARD VOLTAGE:VF(mV)
REVERSE VOLTAGE:VR(V)
VF-IF CHARACTERISTICS
VR-IR CHARACTERISTICS
1000
800
780
760
740
720
700
680
660
640
620
600
f=1MHz
Tj=25°C
IF=2.0A
n=20pcs
100
AVE:660.3mV
10
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
500
480
460
440
420
400
380
360
340
320
300
10000
Tj=25°C
VR=100V
n=20pcs
Tj=25°C
f=1MHz
VR=0V
n=10pcs
1000
AVE:406pF
AVE:312.0nA
100
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
2/4
2012.08 - Rev.B
Data Sheet
RB068L100
ꢀ
30
25
20
15
10
5
300
280
260
240
220
200
180
160
140
120
100
IF=0.5A
IR=1.0A
Irr=0.25×IR
AVE:238.5A
IFSM
8.3ms
1cyc
AVE:7.7ns
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
100
10
1000
100
10
IFSM
IFSM
t
8.3ms 8.3ms
1cyc
1
1
1
1
10
100
10
100
TIME:t(ms)
NUMBER OF CYCLES
IFSM-t CHARACTERISTICS
IFSM-CYCLE CHARACTERISTICS
1000
2
1.5
1
On glass-epoxy substrate
D.C.
Rth(j-a)
Rth(j-c)
D=1/2
100
10
1
Sin(θ=180)
0.5
0
0.1
0.001
0.01
0.1
1
10
100
1000
0
1
2
3
4
AVERAGE RECTIFIED
TIME:t(s)
FORWARD CURRENT:Io(A)
Rth-t CHARACTERISTICS
Io-Pf CHARACTERISTICS
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© 2012 ROHM Co., Ltd. All rights reserved.
3/4
2012.08 - Rev.B
Data Sheet
RB068L100
ꢀ
5
4
3
2
1
0
0.1
0.08
0.06
0.04
0.02
Io
0A
0V
VR
t
D=t/T
VR=50V
Tj=150°C
T
D.C.
D=1/2
D.C.
Sin(θ=180)
D=1/2
Sin(θ=180)
0
0
0
50
100
150
20
40
60
80
100
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
30
25
20
15
10
5
No break at 30kV
AVE:9.2kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
4/4
2012.08 - Rev.B
Notice
N o t e s
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A
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