EMF4 [ROHM]
Power management (dual transistors); 电源管理(双晶体管)![EMF4](http://pdffile.icpdf.com/pdf1/p00094/img/icpdf/EMF4_493522_icpdf.jpg)
型号: | EMF4 |
厂家: | ![]() |
描述: | Power management (dual transistors) |
文件: | 总5页 (文件大小:90K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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EMF4
Transistors
Power management (dual transistors)
EMF4
2SA2018 and DTC123EE are housed independently in a EMT6 package.
!Application
Power management circuit
!External dimensions (Units : mm)
!Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1.2
1.6
!Structure
Silicon epitaxial planar transistor
ROHM : EMT6
Each lead has
same dimensions
Abbreviated symbol:F4
!Equivalent circuits
(3)
(2) (1)
DTr2
Tr1
R1
R2
(4)
(5)
(6)
R
1
=2.2kΩ
=2.2kΩ
R2
!Package, marking, and packaging specifications
Type
EMF4
EMT6
F4
Package
Marking
Code
T2R
Basic ordering unit(pieces)
8000
1/4
EMF4
Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−15
−12
Unit
V
V
VCBO
VCEO
VEBO
−6
V
I
C
−500
−1.0
150(TOTAL)
150
−55~+150
mA
A
mW
°C
°C
Collector current
∗1
∗2
I
CP
Power dissipation
Junction temperature
Range of storage temperature
P
Tj
Tstg
C
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
DTr2
Parameter
Symbol
Limits
50
Unit
V
Supply voltage
VCC
Input voltage
Collector current
V
IN
−10~+20
100
100
150(TOTAL)
150
−55~+150
V
∗1
∗2
I
C
mA
mA
mW
°C
I
O
Output current
Power dissipation
P
Tj
Tstg
C
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor.
°C
∗2 Each terminal mounted on a recommended land.
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Min.
Typ.
−
−
−
−
Max.
−
−
Unit
V
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
−12
−15
−6
−
−
−
270
−
−
I
I
I
C
=−1mA
=−10µA
V
C
−
V
E=−10µA
I
CBO
EBO
CE(sat)
FE
−100
−100
−250
680
−
nA
nA
mV
−
MHz
pF
V
V
CB=−15V
EB=−6V
Emitter cut-off current
I
−
Collector-emitter saturation voltage
DC current gain
V
−100
−
260
6.5
I
C
=−200mA, I
B
=−10mA
=−10mA
=10mA, f=100MHz
=0mA, f=1MHz
h
V
V
V
CE=−2V, I
CE=−2V, I
CB=−10V, I
C
Transition frequency
f
T
E
E
Collector output capacitance
Cob
−
DTr2
Parameter
Symbol
Min.
−
3.0
−
−
−
Typ.
−
−
100
−
−
Max.
0.5
−
300
3.8
0.5
−
Unit
V
Conditions
=100µA
=20mA
V
V
I(off)
V
CC=5V, I
=0.3V, I
O
Input voltage
I(on)
V
V
V
V
V
V
V
O
O
Output voltage
V
O(on)
mV
mA
µA
−
MHz
kΩ
−
O
=10mA, I
I
=0.5mA
Input current
I
I
I
=5V
CC=50V, V
=5V, I
CE=10V, I
Output current
I
O(off)
I
=0V
DC current gain
G
I
20
−
O
O
=20mA
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
f
T
−
1.54
0.8
250
2.2
1.0
−
2.86
E
=−5mA, f=100MHz ∗
R1
−
−
R2/R1
1.2
2/4
EMF4
Transistors
!Electrical characteristic curves
Tr1
1000
1000
1000
100
10
V
CE=2V
V
CE=2V
Ta=25°C
Ta=125°C
Pulsed
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
100
10
1
100
10
I
C
/I
B
=50
C
°
C
C
°
°
I
C/I
B
=20
40
−
IC/IB
=10
Ta=125
Ta=25
Ta=
1 1
10
100
1000
11
10
100
1000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 DC current gain vs.
collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
10000
1000
100
1000
I
C
/I
B
=20
VCE=2V
I
C B=20
/I
Pulsed
Ta=25°C
Pulsed
Pulsed
Ta=−40°C
Ta=25°C
Ta=125°C
100
10
100
10
Ta=25°C
Ta=125°C
Ta=−40°C
11
10
100
1000
11
10
100
1000
10 1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwidth product
vs. emitter current
vs. collector current ( ΙΙ )
1000
I
E
=
0A
f
=
1MHz
Ta=25°C
100
Cib
10
1
Cob
0.1
1
10
100
V)
COLLECTOR TO BASE VOLTAGE : VCB
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/4
EMF4
Transistors
DTr2
100
10m
5m
1k
V
CC=5V
VO=0.3V
V
O
=5V
500
50
2m
Ta=100°C
25°C
−40°C
20
10
200
100
1m
500µ
Ta=100°C
25°C
−40°C
Ta=−40°C
25°C
100°C
200µ
50
5
100µ
50µ
20
10
5
2
1
20µ
10µ
5µ
500m
200m
100m
2
1
2µ
1µ
0
0.5
1.0
1.5
2.0
2.5
3.0
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
OUTPUT CURRENT : I (A)
O
Fig.10 Output current vs. input voltage
(OFF characteristics)
Fig.9 Input voltage vs. output current
(ON characteristics)
Fig.11 DC current gain vs. output
current
1
lO
/lI
=20
500m
200m
100m
50m
Ta=100°C
25°C
−40°C
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I (A)
O
Fig.12 Output voltage vs. output
current
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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EMF4T2R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, EMT6, 6 PIN
ROHM
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