EMF5 [HTSEMI]
General purpose transistors (dual transistors); 通用晶体管（双晶体管）
| 型号： | EMF5 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | General purpose transistors (dual transistors) |
| 文件： | 总2页 (文件大小：553K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF5
General purpose transistors (dual transistors)
FEATURES
z
z
z
z
2SA2018 and DTC144E are housed independently in a package.
Mounting possible with SOT-563 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area be cut in half.
SOT-563
1
Marking: F5
(3)
(2) (1)
Equivalent circuit
DTr2
Tr1
R1
R2
(4)
(5)
(6)
Tr1 Absolute maximum ratings (Ta=25℃)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Value
-15
Units
V
V
-12
V
-6
-500
150
mA
mW
℃
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature
TJ
150
Tstg
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
-15
-12
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-10μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-10μA, IC=0
V
V
ICBO
IEBO
hFE
VCB=-15V, IE=0
VEB=-6V, IC=0
-0.1
-0.1
μA
μA
Emitter cut-off current
DC current gain
VCE=-2V, IC=-10mA
270
680
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=-200mA, IB=-10mA
VCE=-2V, IE=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
-0.25
V
260
6.5
MHz
pF
Collector output capacitance
Cob
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
EMF5
Tr2 Absolute maximum ratings(Ta=25℃)
Parameter
Supply voltage
Symbol
VCC
VIN
Limits
50
Unit
V
V
Input voltage
-10~+40
30
IO
Output current
mA
IC(MAX)
Pd
100
Power dissipation
150
mW
℃
Junction temperature
Storage temperature
Tj
150
℃
Tstg
-55~150
Electrical characteristics (Ta=25℃)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Min.
Typ
Max.
Unit
Conditions
VCC=5V, IO=100μA
VO=0.3V, IO=2mA
IO/II=10mA/0.5mA
VI=5V
0.5
Input voltage
V
3.0
Output voltage
Input current
0.1
0.3
0.18
0.5
V
mA
μA
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
IO(off)
GI
VCC=50V, VI=0
VO=5V, IO=5mA
-
68
32.9
0.8
R1
47
1
61.1
1.2
KΩ
R2/R1
fT
-
250
MHz
VCE=10V, IE=-5mA, f=100MHz
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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