EMF4T2R [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, EMT6, 6 PIN;
| 型号： | EMF4T2R |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, EMT6, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF4
Transistors
Power management (dual transistors)
EMF4
2SA2018 and DTC123EE are housed independently in a EMT6 package.
!Application
Power management circuit
!External dimensions (Units : mm)
!Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1.2
1.6
!Structure
Silicon epitaxial planar transistor
ROHM : EMT6
Each lead has
same dimensions
Abbreviated symbol：F4
!Equivalent circuits
(3)
(2) (1)
DTr2
Tr1
R1
R2
(4)
(5)
(6)
R
1
=2.2kΩ
=2.2kΩ
R2
!Package, marking, and packaging specifications
Type
EMF4
EMT6
F4
Package
Marking
Code
T2R
Basic ordering unit(pieces)
8000
1/4
EMF4
Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−15
−12
Unit
V
V
VCBO
VCEO
VEBO
−6
V
I
C
−500
−1.0
150(TOTAL)
150
−55~+150
mA
A
mW
°C
°C
Collector current
∗1
∗2
I
CP
Power dissipation
Junction temperature
Range of storage temperature
P
Tj
Tstg
C
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
DTr2
Parameter
Symbol
Limits
50
Unit
V
Supply voltage
VCC
Input voltage
Collector current
V
IN
−10~+20
100
100
150(TOTAL)
150
−55~+150
V
∗1
∗2
I
C
mA
mA
mW
°C
I
O
Output current
Power dissipation
P
Tj
Tstg
C
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor.
°C
∗2 Each terminal mounted on a recommended land.
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Min.
Typ.
−
−
−
−
Max.
−
−
Unit
V
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
−12
−15
−6
−
−
−
270
−
−
I
I
I
C
=−1mA
=−10µA
V
C
−
V
E=−10µA
I
CBO
EBO
CE(sat)
FE
−100
−100
−250
680
−
nA
nA
mV
−
MHz
pF
V
V
CB=−15V
EB=−6V
Emitter cut-off current
I
−
Collector-emitter saturation voltage
DC current gain
V
−100
−
260
6.5
I
C
=−200mA, I
B
=−10mA
=−10mA
=10mA, f=100MHz
=0mA, f=1MHz
h
V
V
V
CE=−2V, I
CE=−2V, I
CB=−10V, I
C
Transition frequency
f
T
E
E
Collector output capacitance
Cob
−
DTr2
Parameter
Symbol
Min.
−
3.0
−
−
−
Typ.
−
−
100
−
−
Max.
0.5
−
300
3.8
0.5
−
Unit
V
Conditions
=100µA
=20mA
V
V
I(off)
V
CC=5V, I
=0.3V, I
O
Input voltage
I(on)
V
V
V
V
V
V
V
O
O
Output voltage
V
O(on)
mV
mA
µA
−
MHz
kΩ
−
O
=10mA, I
I
=0.5mA
Input current
I
I
I
=5V
CC=50V, V
=5V, I
CE=10V, I
Output current
I
O(off)
I
=0V
DC current gain
G
I
20
−
O
O
=20mA
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
f
T
−
1.54
0.8
250
2.2
1.0
−
2.86
E
=−5mA, f=100MHz ∗
R1
−
−
R2/R1
1.2
2/4
EMF4
Transistors
!Electrical characteristic curves
Tr1
1000
1000
1000
100
10
V
CE=2V
V
CE=2V
Ta=25°C
Ta=125°C
Pulsed
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
100
10
1
100
10
I
C
/I
B
=50
C
°
C
C
°
°
I
C/I
B
=20
40
−
IC/IB
=10
Ta=125
Ta=25
Ta=
1 1
10
100
1000
11
10
100
1000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 DC current gain vs.
collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
10000
1000
100
1000
I
C
/I
B
=20
VCE=2V
I
C B=20
/I
Pulsed
Ta=25°C
Pulsed
Pulsed
Ta=−40°C
Ta=25°C
Ta=125°C
100
10
100
10
Ta=25°C
Ta=125°C
Ta=−40°C
11
10
100
1000
11
10
100
1000
10 1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwidth product
vs. emitter current
vs. collector current ( ΙΙ )
1000
I
E
=
0A
f
=
1MHz
Ta=25°C
100
Cib
10
1
Cob
0.1
1
10
100
V)
COLLECTOR TO BASE VOLTAGE : VCB
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/4
EMF4
Transistors
DTr2
100
10m
5m
1k
V
CC=5V
VO=0.3V
V
O
=5V
500
50
2m
Ta=100°C
25°C
−40°C
20
10
200
100
1m
500µ
Ta=100°C
25°C
−40°C
Ta=−40°C
25°C
100°C
200µ
50
5
100µ
50µ
20
10
5
2
1
20µ
10µ
5µ
500m
200m
100m
2
1
2µ
1µ
0
0.5
1.0
1.5
2.0
2.5
3.0
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
OUTPUT CURRENT : I (A)
O
Fig.10 Output current vs. input voltage
(OFF characteristics)
Fig.9 Input voltage vs. output current
(ON characteristics)
Fig.11 DC current gain vs. output
current
1
lO
/lI
=20
500m
200m
100m
50m
Ta=100°C
25°C
−40°C
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I (A)
O
Fig.12 Output voltage vs. output
current
4/4
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