DTA115EEBTL [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN;
| 型号： | DTA115EEBTL |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN 晶体 小信号双极晶体管 数字晶体管 开关 光电二极管 |
| 文件： | 总3页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTA115GUA / DTA115GKA
Transistors
Digital transistors (built-in resistor)
DTA115GUA / DTA115GKA
zExternal dimensions (Unit : mm)
zFeatures
1) The built-in bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing of the
input, and parasitic effects are almost completely
eliminated.
DTA115GUA
1.25
2.1
2) Only the on / off conditions need to be set
for operation, making device design easy.
3) Higher mounting densities can be achieved.
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
zEquivalent circuit
DTA115GKA
C
B
R
E
1.6
2.8
E : Emitter
C : Collector
B : Base
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
−50
Unit
V
VCBO
VCEO
VEBO
−50
V
−5
V
I
C
−100
200
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Pc
Tj
150
Tstg
−55 to +150
zPackage, marking, and packaging specifications
Type
DTA115GUA
UMT3
K19
DTA115GKA
SMT3
Package
Marking
K19
Packaging code
T106
T146
Basic ordering unit (pieces)
3000
3000
Rev.A
1/2
DTA115GUA / DTA115GKA
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
I
I
I
C
= −50µA
= −1mA
BVCBO
BVCEO
BVEBO
−50
−50
−5
−
−
−
−
−
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
C
−
−
V
E
= −72µA
CB= −50V
EB= −4V
I
CBO
EBO
CE(sat)
FE
−
−0.5
−58
−0.3
−
µA
µA
V
V
V
I
−30
−
−
Emitter cutoff current
V
−
Collector-emitter saturation voltage
DC current transfer ratio
I
I
C= −5mA, IB= −0.25mA
h
82
70
−
−
−
C
= −5mA, VCE= −5V
R
100
250
130
−
kΩ
MHz
−
Emitter-base resistance
f
T
V
CE= −10V, IE=5mA, f=100MHz
Transition frequency
Transition frequency of the device.
zElectrical characteristics curves
1k
1
VCE=5V
IC/IB=20/1
500
500m
Ta=25°C
Ta=100°C
200
100
50
200m
100m
50m
Ta=25°C
Ta=100°C
Ta= −40°C
Ta= −40°C
20
10
5
20m
10m
5m
2
1
2m
1m
10µ 20µ
50µ 100µ 200µ 500µ 1m 2m
5m 10m
10µ 20µ
50µ 100µ 200µ 500µ 1m 2m
5m 10m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
相关型号：
DTA115EFAC1
Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, FTR, 3 PIN
ROHM
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