DTA115EG-AE3-R [UTC]
PNP DIGITAL TRANSISTOR;
| 型号： | DTA115EG-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | PNP DIGITAL TRANSISTOR |
| 文件： | 总3页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTA115E
PNP EPITAXIAL SILICON TRANSISTOR
PNP DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)
FEATURES
* Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see the
equivalent circuit).
* The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input They also have
the advantage of almost completely eliminating parasitic
effects.
* Only the on / off conditions need to be set for operation,
making device design easy.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
GND (+)
IN
OUT
GND (+)
ORDERING INFORMATION
Pin Assignment
Ordering Number
DTA115EG-AE3-R
Package
Packing
1
2
I
3
SOT-23
G
G
O
O
Tape Reel
Tape Reel
DTA115EG-AL3-R
SOT-323
I
Note: Pin Assignment: G: GND I: IN O: OUT
MARKING
www.unisonic.com.tw
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R220-016.C
DTA115E
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCC
RATINGS
-50
UNIT
V
Supply Voltage
Input Voltage
VIN
-40~+10
-20
V
IOUT
Output Current
mA
IC(MAX)
PD
-100
Power Dissipation
200
mW
°C
Junction Temperature
Storage Temperature
TJ
150
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
Input Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
VIN(OFF) VCC= -5V, IOUT=-100μA
VIN(ON) VOUT= -0.3V,IOUT= -1mA
VOUT(ON) IOUT= -5mA, IIN= -0.25mA
-0.5
V
-3
Output Voltage
Input Current
-0.1
-0.3
-0.15
-0.5
V
IIN
VIN= -5V
mA
μA
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
IOUT(OFF) VCC= -50V , VIN=0V
GI
R1
VOUT= -5V,IOUT= -5mA
82
70
100
1
130
1.2
kΩ
R2/R1
0.8
V
CE= -10 V, IE= 5mA, f=100MHz
Transition Frequency
fT
250
MHz
(Note)
Note: Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R220-016.C
DTA115E
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
www.unisonic.com.tw
QW-R220-016.C
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