DTA115EE_09 [ROHM]

-100mA / -50V Digital transistors (with built-in resistors); -100mA / -50V数字晶体管(具有内置电阻)
DTA115EE_09
型号: DTA115EE_09
厂家: ROHM    ROHM
描述:

-100mA / -50V Digital transistors (with built-in resistors)
-100mA / -50V数字晶体管(具有内置电阻)

晶体 数字晶体管
文件: 总3页 (文件大小:142K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
-100mA / -50V Digital transistors  
(with built-in resistors)  
DTA115EM / DTA115EE / DTA115EUA / DTA115EKA  
Applications  
Inverter, Interface, Driver  
Features  
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input  
resistors (see equivalent circuit).  
2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input,  
and parasitic effects are almost completely eliminated.  
3)Only the on/off conditions need to be set for operation, making the device design easy.  
4)Higher mounting densities can be achieved.  
Structure  
PNP epitaxial planar silicon transistor (Resistor built-in type)  
Dimensions (Unit : mm)  
DTA115EM  
DTA115EE  
0.7  
1.6  
0.3  
1.2  
0.32  
0.55  
(3)  
(
3
)
(
)( )  
2
1
(
)
( )  
1
0.22  
2
0.13  
0.2  
0.2  
0.4 0.4  
0.5  
(1) IN  
(2) GND  
(3) OUT  
(1) GND  
(2) IN  
(3) OUT  
0.15  
0.8  
0.5  
0.5  
ROHM : VMT3  
DTA115EUA  
ROHM : EMT3  
DTA115EKA  
1.0  
Abbreviated symbol : 19  
2.9  
Abbreviated symbol : 19  
1.1  
0.8  
2.0  
0.9  
0.7  
0.4  
0.2  
0.3  
( )  
3
(
)
3
(
)
( )  
1
2
( )  
2
( )  
1
(1) GND  
(2) IN  
(3) OUT  
(1) GND  
(2) IN  
0.95 0.95  
1.9  
0.650.65  
1.3  
0.15  
ROHM : UMT3  
EIAJ : SC-70  
0.15  
ROHM : SMT3  
EIAJ : SC-59  
(3) OUT  
Each lead hsa same dimensions  
Each lead hsa same dimensions  
Abbreviated symbol : 19  
Abbreviated symbol : 19  
Packaging specifications  
Inner circuit  
Package  
Packging type  
Code  
VMT3 EMT3 UMT3 SMT3  
Taping Taping Taping Taping  
R
1
OUT  
IN  
T2L  
TL  
T106 T146  
R
2
Part No.  
Basic ordering unit (pieces) 8000 3000 3000 3000  
GND (+)  
DTA115EM  
DTA115EE  
DTA115EUA  
DTA115EKA  
IN  
OUT  
GND (+)  
R1=R2=100kΩ  
www.rohm.com  
2009.06 - Rev.C  
1/2  
c
2009 ROHM Co., Ltd. All rights reserved.  
DTA115EM / DTA115EE / DTA115EUA / DTA115EKA  
Data Sheet  
Absolute maximum ratings (Ta=25C)  
Parameter  
Symbol  
Limits  
50  
Unit  
V
Supply voltage  
Input voltage  
VCC  
40 to +10  
20  
100  
V
I
V
I
O
mA  
Output current  
I
C(Max.)  
PD  
DTA115EM / DTA115EE  
150  
Power  
mW  
dissipation  
DTA115EUA / DTA115EKA  
200  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical characteristics (Ta=25C)  
Parameter  
Min.  
Typ.  
Max.  
Unit  
Symbol  
Conditions  
= −100μA  
V
V
I(off)  
V
CC= −5V, I  
= −0.3V, I  
= −5mA, I  
= −5V  
CC= −50V, V  
= −5mA, V  
O
3  
82  
70  
0.8  
0.1  
100  
1
0.5  
0.3  
0.15  
0.5  
130  
1.2  
Input voltage  
V
I(on)  
VO  
O= −1mA  
V
mA  
μA  
kΩ  
Output voltage  
Input current  
V
O(on)  
IO  
I= −0.25mA  
I
I
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
IO(off)  
I=0V  
GI  
IO  
O
= −5V  
R1  
R
2/R  
1
250  
MHz  
Transition frequency  
fT  
V
CE= −10V, I  
E=5mA, f=100MHz  
Characteristics of built-in transistor  
Electrical characteristic curves  
100  
10m  
5m  
1k  
VCC=5V  
VO=0.3V  
VO=5V  
Ta=100°C  
50  
500  
2m  
1m  
Ta=100°C  
20  
10  
5
200  
100  
50  
Ta=25°C  
500μ  
Ta=25°C  
200μ  
100μ  
50μ  
Ta=25°C  
Ta= −40°C  
Ta= −40°C  
2
1
20  
10  
5
Ta= −40°C  
20μ  
10μ  
5μ  
500m  
Ta=100°C  
200m  
100m  
100μ 200μ  
2
1
2μ  
1μ  
500μ 1m 2m  
5m 10m 20m  
50m 100m  
0
500m  
1
1.5  
2
2.5  
3
10μ 20μ  
50μ 100μ 200μ  
500μ 1m 2m  
5m 10m  
OUTPUT CURRENT : I  
O
(A)  
INPUT VOLTAGE : V  
I
(off) (V)  
OUTPUT CURRENT : I (A)  
O
Fig.1 Input voltage vs. Output current  
(ON characteristics)  
Fig.2 Output current vs. Input voltage  
(OFF characteristics)  
Fig.3 DC current gain vs. Output current  
1
IO/II=20/1  
500m  
Ta=100°C  
200m  
100m  
50m  
Ta=25°C  
Ta= −40°C  
20m  
10m  
5m  
2m  
1m  
10μ 20μ  
50μ 100μ 200μ  
500μ 1m 2m  
5m 10m  
OUTPUT CURRENT : I (A)  
O
Fig.4 Output voltage vs. Output current  
www.rohm.com  
2009.06 - Rev.C  
2/2  
c
2009 ROHM Co., Ltd. All rights reserved.  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
The Products specified in this document are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
against the possibility of physical injury, fire or any other damage caused in the event of the  
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM  
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed  
scope or not in accordance with the instruction manual.  
The Products are not designed or manufactured to be used with any equipment, device or  
system which requires an extremely high level of reliability the failure or malfunction of which  
may result in a direct threat to human life or create a risk of human injury (such as a medical  
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,  
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of  
any of the Products for the above special purposes. If a Product is intended to be used for any  
such special purpose, please contact a ROHM sales representative before purchasing.  
If you intend to export or ship overseas any Product or technology specified herein that may  
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to  
obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2009 ROHM Co., Ltd. All rights reserved.  
R0039  
A

相关型号:

DTA115EF

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
ETC

DTA115EFA

TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
ETC

DTA115EFAC1

Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, FTR, 3 PIN
ROHM

DTA115EG-AE3-R

PNP DIGITAL TRANSISTOR
UTC

DTA115EG-AL3-R

PNP DIGITAL TRANSISTOR
UTC

DTA115EH

トランジスタ
ETC

DTA115EK

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
ETC

DTA115EKAT146

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN
ROHM

DTA115EKAT147

Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
ROHM

DTA115EKAT246

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
ROHM

DTA115EKT146

Small Signal Bipolar Transistor,
ROHM