BV1HAL85EFJ_技术文档

Datasheet

Load Switch IC

34 V Breakdown Voltage

Variable Overcurrent Detection

1ch Load Switch

BV1HAL85EFJ

General Description

Key Specifications

BV1HAL85EFJ is a single Nch MOSFET high side load

switch applicable to 8.0 V to 32.0 V input. It has a built-in

overcurrent protection, Thermal shutdown protection,

soft-start function and low power output OFF function. It

is equipped with error flag notification pin to indicate

thermal shutdown and overcurrent. Single chip power

supply management is possible.

 Input Voltage Range:

 Output ON Resistance:

 Variable Overcurrent Detection: 2.5 A to 6.5 A (Typ)

 Standby Current:

 Operating Temperature Range:

8.0 V to 32.0 V

85 mΩ (Typ)

0.5 μA (Max)

-40 °C to +85 °C

Package

W (Typ) x D (Typ) x H (Max)

HTSOP-J8

4.9 mm x 6.0 mm x 1.0 mm

Features

 Dual TSD^{(Note 1)}

 Low On-Resistance Single Nch MOSFET Switch

 Variable Output Soft-Start Time

 Overcurrent Protection Function (Latch-Off)

 Thermal Shutdown Protection Function (TSD)

 Low Voltage Output OFF Function (UVLO)

 Error Flag Notification Pin

(Note 1) This IC has thermal shutdown function (Junction temperature

detect) and ΔTj Protection function (Power-MOS

steep temperature rising detect).

Applications

 Multifunction Machine and TV

 Overcurrent Monitoring of Various Power Lines and

Power Management

Application Circuit

12 V / 24 V

CIN = 1 µF

IN

OUT

SS

RSS

C_OUT

ILIM

GND

FLAG

Load

R_LIM

N.C.

EN

10 kΩ to

100 kΩ

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

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Table of Contents

General Description........................................................................................................................................................................1

Features..........................................................................................................................................................................................1

Applications ....................................................................................................................................................................................1

Key Specifications ..........................................................................................................................................................................1

Package..........................................................................................................................................................................................1

Application Circuit...........................................................................................................................................................................1

Table of Contents............................................................................................................................................................................2

Pin Configuration ............................................................................................................................................................................3

Pin Description................................................................................................................................................................................3

Block Diagram ................................................................................................................................................................................3

Definition.........................................................................................................................................................................................4

Absolute Maximum Ratings ............................................................................................................................................................5

Thermal Resistance........................................................................................................................................................................6

Recommended Operating Conditions...........................................................................................................................................10

Electrical Characteristics...............................................................................................................................................................10

Typical Performance Curves.........................................................................................................................................................11

Measurement Setup .....................................................................................................................................................................17

Timing Chart .................................................................................................................................................................................19

Function Description.....................................................................................................................................................................20

1.Truth Table .............................................................................................................................................................................20

2. Overcurrent Protection ..........................................................................................................................................................21

2.1 Latch-off due to Fixed Overcurrent Limit (I_OCD1)...............................................................................................................21

2.2 Duration of Fixed Overcurrent Limit (I_OCD1) is less than t_BLANK.........................................................................................23

2.3 Latch-off due to Variable Overcurrent Detection (I_OCD2)...................................................................................................25

2.4 Duration of Variable Overcurrent Detection (I_OCD2) is less than t_BLANK..............................................................................25

2.5 Setting Variable Overcurrent Detection............................................................................................................................26

3. Setting Soft Start Function ....................................................................................................................................................27

4. Thermal Shutdown Function, ΔTj Protection Function...........................................................................................................30

4.1 Thermal Shutdown Function............................................................................................................................................30

4.2 ΔTj Protection Function....................................................................................................................................................30

4.3 The case of connecting the capacitance load..................................................................................................................31

5. Output Load is Open.............................................................................................................................................................34

I/O Equivalence Circuit .................................................................................................................................................................35

Operational Notes.........................................................................................................................................................................36

Ordering Information.....................................................................................................................................................................38

Marking Diagram ..........................................................................................................................................................................38

Physical Dimension and Packing Information...............................................................................................................................39

Revision History............................................................................................................................................................................40

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Pin Configuration

HTSOP-J8

(TOP VIEW)

Pin Description

Pin No.

Pin Name

SS

Function

1

2

3

4

Variable soft-start time setting pin

ILIM

Variable overcurrent detection setting pin

Ground pin

GND

FLAG

Error flag output pin (Active low when TSD and OCD is detected.)

Enable pin (Pull-down resistor is connected internally.)

Active High to turn on the switch

5

EN

6

N.C.

OUT

IN

Not connected pin^{(Note 1)}

Switch output pin

7,8

EXP-PAD

Power input pin, switch input pin

(Note 1) GND short connection is recommended for the N.C. pin. It can also be open since the N.C. pin is not connected inside the IC.

Block Diagram

IN

Gate Control

Control

Clamp

CLK

Charge

Pump

Power MOS FET

Gate Driver

OUT

SS

EN

lnternal

supply

Control

Logic

Protect

TSD

FLAG

UVLO

for TSD,OCP

ILIM

OCD

GND

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Definition

I_IN

IN

V_DSV_IN

I_EN

EN

I_OUT

OUT

V_OUT

I_FLAG

I_SS

FLAG

SS

V_FLAG

I_ILIM

ILIM

GND

I_GND

Figure 1. Voltage and Current Definition

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Absolute Maximum Ratings (Ta = 25 °C)

Item

Symbol

Rating

unit

Power Supply Output Voltage

Power Supply Voltage (IN)

Storage Temperature Range

Maximum Junction Temperature

EN Input Voltage

V_DS

V_IN

-0.3 to Internal limit^{(Note 1)}

-0.3 to +34

-55 to +150

150

V

Tstg

Tjmax

V_EN

°C

V

-0.3 to +7.0

Internal limit^{(Note 2)}

10

FLAG Output Voltage

V_FLAG

I_OUT

V

Output Current

A

FLAG Output Current

I_FLAG

mA

Active Clamp Capability (single pulse)

46.0

mJ

E_AS

Tj_(START)= 25 °C, I_OUT(START)= 1 A^{(Note 3)(Note 4)}

Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated

over the absolute maximum ratings.

Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the

properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing

board size and copper area so as not to exceed the maximum junction temperature rating.

(Note 1) Internal limit according to output clamp voltage

(Note 2) Internal limit according to fixed overcurrent limit

(Note 3) This is the maximum value of active clamp tolerance (single pulse) under the conditions of I_OUT(START)= 1 A, V_IN= 24 V.

The OUT pin potential drops less than 0 V during turned off when L load is connected in the OUT pin.

The energy at this time is consumed in BV1HAL85EFJ. This energy is expressed in the equation below.

푅_ꢀ× ꢁ_{푂푈푇ꢂ푆푇퐴ꢃ푇)}

퐿

푉

퐼푁

− 푉_퐷푆

푅_ꢀ

퐸_퐴푆= 푉_퐷푆

×

× [

× 푙푛 (1 −

ꢄ + ꢁ_{푂푈푇ꢂ푆푇퐴ꢃ푇)}]

푅_ꢀ

푉 − 푉_퐷푆

퐼푁

Following equation simplifies under the assumption of R_L= 0 Ω.

1

2

푉

퐼푁

퐸_퐴푆

=

× 퐿 × ꢁ_{푂푈푇ꢂ푆푇퐴ꢃ푇)}^ꢅ× ꢂ 1 −

)

푉

퐼푁

− 푉_퐷푆

(Note 4) Not 100 % tested.

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Thermal Resistance^{(Note 1)}

Parameter

Symbol

Typ

Unit

Condition

HTSOP-J8

(Note 2)

123.1

38.3

27.0

°C/W

1s

2s

Between Junction and Surroundings Temperature

Thermal Resistance

(Note 3)

(Note 4)

θ_JA

2s2p

(Note 1) The thermal impedance is based on JESD51-2A (Still-Air) standard. It is used in the chip of BV1HAL85EFJ.

(Note 2) JESD51-3 standard FR4 114.3 mm x 76.2 mm x 1.57 mm 1-layer (1s)

(Top copper foil: ROHM recommended Footprint + wiring to measure, 2 oz. copper.)

(Note 3) JESD51-5 standard FR4 114.3 mm x 76.2 mm x 1.60 mm 2-layers (2s)

(Top copper foil: ROHM recommended Footprint + wiring to measure / Copper foil area on the reverse side of PCB: 74.2 mm x 74.2 mm,

copper (top & reverse side) 2 oz.)

(Note 4) JESD51-5/- 7 standard FR4 114.3 mm x 76.2 mm x 1.60 mm 4-layers (2s2p)

(Top copper foil: ROHM recommended Footprint + wiring to measure / 2 inner layers and copper foil area on the reverse side of PCB: 74.2 mm x 74.2 mm,

copper (top & reverse side/inner layers) 2 oz./1 oz.)

■

PCB Layout 1 Layer (1s)

Figure 2. PCB Layout 1 Layer (1s)

Dimension

Board Finish Thickness

Board Dimension

Value

1.57 mm ± 10 %

76.2 mm x 114.3 mm

FR4

Board Material

Copper Thickness (Top/Bottom Layers)

Copper Foil Area Dimension

0.070 mm (Cu : 2 oz)

Footprint / 100 mm²/ 600 mm²/ 1200 mm²

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Thermal Resistance – continued

■

PCB Layout 2 Layers (2s)

Figure 3. PCB Layout 2 Layers (2s)

Dimension

Value

1.60 mm ± 10 %

76.2 mm x 114.3 mm

FR4

Board Finish Thickness

Board Dimension

Board Material

Copper Thickness (Top/Bottom Layers)

Thermal Vias Separation / Diameter

0.070 mm (Cu +Plating)

1.2 mm / 0.3 mm

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Thermal Resistance – continued

■

PCB Layout 4 Layers (2s2p)

Figure 4. PCB Layout 4 Layers (2s2p)

Dimension

Value

1.60 mm ± 10 %

76.2 mm x 114.3 mm

FR4

Board Finish Thickness

Board Dimension

Board Material

Copper Thickness (Top/Bottom Layers)

Copper Thickness (Inner Layers)

Thermal Vias Separation / Diameter

0.070 mm (Cu +Plating)

0.035 mm

1.2 mm / 0.3 mm

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Thermal Resistance – continued

■

Transient Thermal Resistance (Single Pulse)

1000

100

10

1

1s footprint

2s

2s2p

0

0.0001 0.001

0.01

0.1

1

10

100

1000

Pulse Time [s]

Figure 5. θ_JAvs Pulse Time

■

Thermal Resistance (θ_JAvs Copper foil area - 1s)

140

120

100

80

60

40

20

0

200

400

600

800

1000

1200

Copper Foil Area (1s) [mm²]

Figure 6. θ_JAvs Copper Foil Area (1s)

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Recommended Operating Conditions

Parameter

Power Supply^{(Note 1)}

Operating Temperature

Symbol

Min

Typ

Max

Unit

V_IN

8.0

-40

-

32.0

+85

V

Topr

°C

(Note 1) Do not exceed the maximum junction temperature.

Electrical Characteristics (Unless otherwise specified V_IN= 8.0 V to 32.0 V, Tj = -40 °C to +85 °C, R_LIM= 100 kΩ)

Parameter

[Power Supply]

Symbol

Min

Typ

Max

Unit

Condition

V_IN= 24 V, V_EN= 0 V,

Tj = 25 °C

V_IN= 24 V, V_EN= 0 V,

Tj = 25 °C

Standby Current

Operating Current

I_STB

I_CC

-

0.5

µA

2.00

3.50

mA

UVLO Detection Voltage

UVLO Hysteresis Voltage

[Input (V_EN)]

V_UVLO

-

6.0

1.3

V

V_UVHYS

0.5

0.9

EN High Voltage

V_ENH

V_ENL

V_ENHYS

I_ENH

2.1

-

V

EN Low Voltage

0.9

0.80

100

+1

EN Hysteresis Voltage

EN High Input Current

EN Low Input Current

[Power MOS Output]

Output ON Resistance

0.10

-

0.45

50

-

V

μA

V_EN= 5 V

V_EN= 0 V

I_ENL

-1

R_ON

I_LSW

-

85

-

120

0.5

mΩ

V_EN= 5 V, Tj = 25 °C

V_EN= 0 V, V_OUT= 0 V,

Tj = 25 °C

Output Leakage Current

µA

V_IN= 24 V, Tj = 25 °C

V/ms R_SS= 100 kΩ, R_L= 100 Ω,

V_OUT:20 %→80 %

Output ON Slew Rate

SR_ON

SR_OFF

t_ON

0.45

-

0.75

0.18

30

1.05

0.60

42

V_IN= 24 V, Tj = 25 °C

R_SS= 100 kΩ, R_L= 100 Ω,

V_OUT:80 %→20 %

V_IN= 24 V, Tj = 25 °C

R_SS= 100 kΩ, R_L= 100 Ω,

V_EN:50 %→V_OUT:80 %

V_IN= 24 V, Tj = 25 °C

R_SS= 100 kΩ, R_L= 100 Ω,

V_EN:50 %→V_OUT:20 %

V_EN= 0 V,

Output OFF Slew Rate

Output ON Delay Time

V/μs

18

ms

Output OFF Delay Time

Output Clamp Voltage

t_OFF

-

180

50

450

55

μs

V_DSCLP

45

V

I_OUT= 10 mA

[FLAG]

FLAG Low Output Voltage

FLAG Pin Leakage Current

V_FLAG

I_LFLAG

-

0.5

1

V

I_FLAG= 1 mA

V_FLAG= 5 V

µA

The time from overcurrent

detection to V_FLAG= Low.

FLAG Output Delay Time

t_BLANK

15

30

45

ms

[Diagnostic Functions]

Thermal Shutdown Detection^{(Note 1)}

Thermal Shutdown Hysteresis^{(Note 1)}

ΔTj Protection^{(Note 1)}

T_TSD

T_TSDHYS

T_DTJ

150

-

175

15

200

°C

A

-

105

30

ΔTj Protection Hysteresis^{(Note 1)}

T_DTJHYS

I_OCD1

-

Fixed Overcurrent Limit

8.7

3.0

13.0

4.5

17.3

6.1

Tj = 25 °C

Variable Overcurrent Detection

I_OCD2

A

R_LIM= 100 kΩ, Tj = 25 °C

(Note 1) Not 100 % tested.

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Typical Performance Curves

(Unless otherwise specified V_IN= 24 V, V_EN= 5 V, Tj = 25 °C)

0.6

0.4

0.2

0

0.6

0.4

0.2

0

-0.2

-0.4

-0.6

-0.4

V_EN= 0 V

-0.6

0

5

10

15

20

25

30

35

-50

-25

0

25

50

75

100

Supply Voltage: V_IN[V]

Junction Temperature: Tj [°C]

Figure 7. Standby Current vs Supply Voltage

Figure 8. Standby Current vs Junction Temperature

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

V_EN= 5 V

0

5

10

15

20

25

30

35

-50

-25

0

25

50

75

100

Supply Voltage: V_IN[V]

Junction Temperature: Tj [°C]

Figure 9. Operating Current vs Supply Voltage

Figure 10. Operating Current vs Junction Temperature

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Typical Performance Curves – continued

(Unless otherwise specified V_IN= 24 V, V_EN= 5 V, Tj = 25 °C)

5

4

3

2

1

0

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-50

-25

0

25

50

75

100

-50

-25

0

25

50

75

100

Junction Temperature: Tj [°C]

Figure 11. UVLO Detection Voltage vs Junction Temperature

Figure 12. UVLO Hysteresis Voltage vs Junction Temperature

4.0

3.5

3.0

2.5

150

125

100

V_ENH

2.0

1.5

1.0

0.5

0.0

75

I_ENH

50

V_ENL

25

I_ENL

0

-50

-25

0

25

50

75

100

-50

-25

0

25

50

75

100

Junction Temperature: Tj [°C]

Figure 13. EN Voltage vs Junction Temperature

Figure 14. EN Input Current vs Junction Temperature

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Typical Performance Curves – continued

(Unless otherwise specified V_IN= 24 V, V_EN= 5 V, Tj = 25 °C)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

160

140

120

100

80

60

40

20

0

-50

-25

0

25

50

75

100

0

5

10

15

20

25

30

35

Junction Temperature: Tj [°C]

Supply Voltage: V_IN[V]

Figure 15. EN Hysteresis Voltage vs Junction Temperature

Figure 16. Output ON Resistance vs Supply Voltage

200

180

160

140

120

100

80

0.6

0.4

0.2

0

-0.2

-0.4

-0.6

60

40

20

0

-50

-25

0

25

50

75

100

-50

-25

0

25

50

75

100

Junction Temperature: Tj [°C]

Figure 17. Output ON Resistance vs Junction Temperature

Figure 18. Output Leakage Current vs Junction Temperature

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Typical Performance Curves – continued

(Unless otherwise specified V_IN= 24 V, V_EN= 5 V, Tj = 25 °C)

1.20

0.6

0.5

0.4

0.3

0.2

0.1

0

R_SS= 100 kΩ

R_L= 100 Ω

R_SS= 100 kΩ

R_L= 100 Ω

1.05

0.90

0.75

0.60

0.45

0.30

0.15

0.00

-50

-25

0

25

50

75

100

-50

-25

0

25

50

75

100

Junction Temperature: Tj [°C]

Figure 19. Output ON Slew Rate vs Junction

Temperature

Figure 20. Output OFF Slew Rate vs Junction Temperature

80

70

60

50

40

30

20

10

0

200

180

160

140

120

100

80

60

40

R_SS= 100 kΩ

R_L= 100 Ω

R_SS= 100 kΩ

R_L= 100 Ω

20

0

-50

-25

0

25

50

75

100

-50

-25

0

25

50

75

100

Junction Temperature: Tj [°C]

Figure 21. Output ON Delay Time vs Junction

Temperature

Figure 22. Output OFF Delay Time vs Junction Temperature

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Typical Performance Curves – continued

(Unless otherwise specified V_IN= 24 V, V_EN= 5 V, Tj = 25 °C)

80

70

60

50

40

30

0.5

0.4

0.3

0.2

0.1

0.0

20

I_OUT= 10 mA

V_EN= 0 V

10

0

-50

-25

0

25

50

75

100

-50

-25

0

25

50

75

100

Junction Temperature: Tj [°C]

Figure 23. Output Clamp Voltage vs Junction

Temperature

Figure 24. FLAG Low Output Voltage vs Junction

Temperature

20

18

16

14

12

10

8

45

40

35

30

25

20

15

10

5

6

4

2

0

-50

-25

0

25

50

75

100

-50

-25

0

25

50

75

100

Junction Temperature: Tj [°C]

Figure 25. FLAG Output Delay Time vs Junction

Temperature

Figure 26. Fixed Overcurrent Limit vs Junction Temperature

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Typical Performance Curves – continued

(Unless otherwise specified V_IN= 24 V, V_EN= 5 V, Tj = 25 °C)

8

7

6

5

4

3

2

1

0

1000

100

10

Tj_(START)= 25 ºC

Tj_(START)= 150 ºC

1

-50

-25

0

25

50

75

100

0.1

1.0

Output Current: I_OUT[A]

10.0

Junction Temperature: Tj [°C]

Figure 27. Variable Overcurrent Detection vs Junction

Temperature

Figure 28. Active Clamp Energy vs Output Current

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Measurement Setup

VIN

IN

SS

OUT

EN

OUT

EN

ILIM

FLAG

5.1 kΩ

GND

VEN

VFLAG

Figure 29. Standby Current

Figure 30. Operating Current

EN Low Input Current

Output Leakage Current

FLAG Pin Leakage Current

VIN

IN

SS

OUT

I_OUT

ILIM

1 kΩ

EN

FLAG

GND

VEN

GND

VEN

Figure 31. UVLO Detection Voltage

UVLO Hysteresis Voltage

EN High Voltage

Figure 32. Output ON Resistance

Output Clamp Voltage

EN Low Voltage

EN Hysteresis Voltage

EN High Input Current

EN Low Input Current

Thermal Shutdown Detection

Thermal Shutdown Hysteresis

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Measurement Setup – continued

VIN

IN

SS

OUT

EN

OUT

EN

I_OUT

100 Ω

Monitor

RSS

ILIM

FLAG

Monitor

5.1 kΩ

GND

5.1 kΩ

Monitor

VEN

VFLAG

VEN

VFLAG

Figure 33. Output ON Slew Rate

Output OFF Slew Rate

Figure 34. FLAG Low Output Voltage

Output ON Delay Time

Output OFF Delay Time

FLAG Output Delay Time

VIN

IN

SS

OUT

EN

I_OUT

ILIM

RLIM

FLAG

5.1 kΩ

GND

VEN

Monitor

VFLAG

Figure 35. Fixed Overcurrent Limit

Variable Overcurrent Detection

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Timing Chart

Input Voltage

V_IN

t

50 %

EN Voltage

V_EN

50 %

t

t_OFF

t_ON

80 %

Output Voltage

V_OUT

20 %

t

SR_ON

SR_OFF

Error Flag

V_FLAG

t

Figure 36. Output ON / OFF Timing Chart

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Function Description

1. Truth Table

Table 1. Protection Detection and Error FLAG Output

Control

Logic

EN

Input

Voltage

V_IN

Junction

Temperature

Tj

Output

Current

I_OUT

Output State

OUT

Error Flag Output

V_FLAG

Mode

I_OUT< I_OCD2

ON

H

Normal

Overcurrent

Detection

I_OUT> I_OCD2

Tj < T_TSD

I_OUT> I_OCD2

t_BLANKafter

Latch Off

L

Latch Off ^{(Note 1)}

V_IN> V_UVLO

H

Output

Limited

Overcurrent

Limitation

I_OUT> I_OCD1

H

Tj > T_TSD

-

OFF

L

TSD protection

ΔTj protection

Stand-by

ΔTj^{(Note 2 )}> T_DTJ

V_IN< V_UVLO

-

H

L

-

Stand-by

(Note 1) When thermal shutdown protection is triggered while overcurrent protection is active, output is Latch Off even if t < t_BLANK. The condition of Latch Off release is

switching of EN voltage (V_EN) or IN voltage (V_IN).

(Note 2) The temperature difference of Power MOS FET and control in the IC.

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Function Description – continued

2. Overcurrent Protection

This IC has two overcurrent detection functions: Fixed Overcurrent Limit (I_OCD1) to protect the IC and Variable Overcurrent

Detection (I_OCD2) to protect the load. Variable Overcurrent Detection (I_OCD2) is set by an external resistor R_LIMat the ILIM

Pin.

2.1 Latch-off due to Fixed Overcurrent Limit (I_OCD1

)

Figure 37 and Figure 38 show the timing chart of the Latch-off function when Fixed Overcurrent Limit (I_OCD1) is

detected.

④

EN Voltage

V_EN

t

③

Output Voltage

V_OUT

t

①

Latch-off

②

I_OCD1

I_OCD2

Output Current

I_OUT

Normal Current

t

t_SS

t_BLANK

Error FLAG

V_FLAG

t

Figure 37. The timing chart with Latch-off when I_OUTafter Fixed Overcurrent Limit (I_OCD1) detection is equal to I_OCD2or higher

①

②

When I_OUTexceeds the Fixed Overcurrent Limit (I_OCD1), I_OUTdecreases momentarily then becomes

I_OUT≥ I_OCD2

I_OUTincreases until it reaches I_OCD1

The time it takes for I_OUT= I_OCD1(t_SS) depends on the setting of Soft Start Function by external resistor R_SS(Table

3, 4). When I_OUT= I_OCD1, Output voltage (V_OUT) = Load resistance (R_L) × Fixed Overcurrent Limit (I_OCD1

.

)

③

④

When I_OUTexceeds the Variable Overcurrent Detection (I_OCD2) and the duration exceeds t_BLANK, output is latched

off and Error FLAG V_FLAGis set to Low.

When EN is turned OFF, Latch-Off function is released and Error FLAG V_FLAGis set to High.

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2.1 Latch-off due to Fixed Overcurrent Limit (I_OCD1) – continued

④

EN Voltage

V_EN

t

③

Output Voltage

V_OUT

①

Latch-off

②

I_OCD1

I_OCD2

Output Current

I_OUT

Normal Current

t_SS

t_BLANK

Error FLAG

V_FLAG

Figure 38. The timing chart with Latch-off when I_OUTafter Fixed Overcurrent Limit (I_OCD1) detection is less than I_OCD2

①

②

When I_OUTexceeds the Fixed Overcurrent Limit (I_OCD1), I_OUTdecreases momentarily then becomes

I_OUT< I_OCD2

I_OUTincreases until it reaches I_OCD1

The time it takes for I_OUT= I_OCD1(t_SS) depends on the setting of Soft Start Function by external resistor R_SS(Table

3, 4). When I_OUT= I_OCD1, Output voltage (V_OUT) = Load resistance (R_L) × Fixed Overcurrent Limit (I_OCD1

.

)

③

④

When I_OUTexceeds the Variable Overcurrent Detection (I_OCD2) and the duration exceeds t_BLANK, output is latched

off and Error FLAG V_FLAGis set to Low.

When EN is turned OFF, Latch-Off function is released and Error FLAG V_FLAGis set to High.

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2. Overcurrent Protection – continued

2.2 Duration of Fixed Overcurrent Limit (I_OCD1) is less than t_BLANK

Figure 39 and Figure 40 show the timing chart without the Latch-off function when Fixed Overcurrent Limit (I_OCD1) is

detected.

EN Voltage

V_EN

t

④

③

Output Voltage

V_OUT

t

①

②

I_OCD1

I_OCD2

Output Current

I_OUT

Normal Current

t_SS

t_BLANK

Error FLAG

V_FLAG

Figure 39. The timing chart without Latch-off when I_OUTafter Fixed Overcurrent Limit (I_OCD1) detection is equal to I_OCD2or higher

①

②

When I_OUTexceeds the Fixed Overcurrent Limit (I_OCD1), I_OUTdecreases momentarily then becomes

I_OUT≥ I_OCD2

I_OUTincreases until it reaches I_OCD1

The time it takes for I_OUT= I_OCD1(t_SS) depends on the setting of Soft Start Function by external resistor R_SS(Table

3, 4)_.When I_OUT= I_OCD1, Output voltage (V_OUT) = Load resistance (R_L) × Fixed Overcurrent Limit (I_OCD1

.

)

③

④

When the duration where I_OUTexceeds the Variable Overcurrent Detection (I_OCD2) is less than t_BLANK

the output does not latch off.

,

Indicates t_BLANK

.

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2.2 Duration of Fixed Overcurrent Limit (I_OCD1) is less than t_BLANK– continued

EN Voltage

V_EN

t

③

④

Output Voltage

V_OUT

①

②

I_OCD1

I_OCD2

Output Current

I_OUT

Normal Current

t_SS

t_BLANK

Error FLAG

V_FLAG

Figure 40. The timing chart without Latch-off when I_OUTafter Fixed Overcurrent Limit (I_OCD1) detection is less than I_OCD2

①

②

When I_OUTexceeds the Fixed Overcurrent Limit (I_OCD1), I_OUTdecreases momentarily then becomes

I_OUT< I_OCD2

I_OUTincreases until it reaches I_OCD1

The time it takes for I_OUT= I_OCD1(t_SS) depends on the setting of Soft Start Function by external resistor R_SS(Table

3, 4)_.When I_OUT= I_OCD1, Output voltage (V_OUT) = Load resistance (R_L) × Fixed Overcurrent Limit (I_OCD1

.

)

③

④

When the duration where I_OUTexceeds the Variable Overcurrent Detection (I_OCD2) is less than t_BLANK

the output does not latch off.

,

Indicates t_BLANK

.

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2. Overcurrent Protection – continued

2.3 Latch-off due to Variable Overcurrent Detection (I_OCD2

)

Figure 41 shows the timing chart of the Latch-off function when Variable Overcurrent Detection (I_OCD2) is detected.

③

EN Voltage

V_EN

t

①

②

Output Voltage

V_OUT

t

Latch-off

Output Current

I_OUT

I_OCD1

I_OCD2

Normal Current

t_BLANK

Error FLAG

V_FLAG

Figure 41. The timing chart of Latch-off function due to Variable Overcurrent Detection (I_OCD2

)

①

②

③

When I_OUTexceeds the Variable Overcurrent Detection (I_OCD2) but is the Fixed Overcurrent Limit (I_OCD1) or less,

I_OUTis not limited.

When I_OUTexceeds the Variable Overcurrent Detection (I_OCD2) and the duration exceeds t_BLANK, output is latched

off and Error FLAG is set to Low.

When EN is turned OFF, Latch-Off function is released and Error FLAG is set to High.

2.4 Duration of Variable Overcurrent Detection (I_OCD2) is less than t_BLANK

Figure 42 shows the timing chart without the Latch-off function when Variable Overcurrent Detection (I_OCD2) is

detected.

EN Voltage

V_EN

t

①

②

③

Output Voltage

V_OUT

t

I_OCD1

I_OCD2

Output Current

I_OUT

Normal Current

t_BLANK

Error FLAG

V_FLAG

Figure 42. The timing chart of Variable Overcurrent Detection (I_OCD2) without latch-off function

①

②

③

When I_OUTexceeds the Variable Overcurrent Detection (I_OCD2) but is the Fixed Overcurrent Limit (I_OCD1) or less,

I_OUTis not limited.

When the duration where I_OUTexceeds the Variable Overcurrent Detection (I_OCD2) is less than t_BLANK

,

the output does not latch off.

Indicates t_BLANK

.

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2. Overcurrent Protection – continued

2.5 Setting Variable Overcurrent Detection

This IC has a Variable Overcurrent Detection (I_OCD2) that can be set by an external resistor R_LIM. The Variable

Overcurrent Detection (I_OCD2) value is set by R_LIMvalue as shown below. R_LIMshould be set from 50 kΩ to 200 kΩ.

Table 2. Variable Overcurrent Detection against R_LIMValue

Variable Overcurrent Detection (I_OCD2) [A]

R_LIM[kΩ]

Min

Typ

Max

50

4.20

6.46

8.72

70

3.60

2.93

2.53

2.33

1.65

1.51

5.53

4.50

3.89

3.59

2.64

2.44

7.47

6.08

5.25

4.85

3.69

3.66

100

120

130

170

200

10

9

8

7

6

5

4

3

2

1

0

Max

Typ

Min

0

50

100

150

200

250

R_LIM[kΩ]

Figure 43. Variable Overcurrent Detection vs R_LIM

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Function Description – continued

3. Setting Soft Start Function

This IC has a soft start function that can be set by an external resistor R_SS

.

The output on delay time (t_ON) and output on slew rate (SR_ON) set against R_SSvalue at V_IN= 12 V and V_IN= 24 V is

shown below. Set R_SSwithin 15 kΩ to 120 kΩ range. ^{(Note 1) (Note 2)}

Table 3. Output On Delay Time against R_SSValue (Tj = 25 °C)

Output ON Delay Time (t_ON) [ms]

R_SS[kΩ]

V_IN= 12 V

Typ

V_IN= 24 V

Typ

Min

Max

7.64

Min

Max

9.64

15

20

3.27

5.45

6.58

4.13

6.89

8.32

3.95

5.21

9.21

4.99

6.60

11.65

15.40

18.48

23.19

26.85

42.00

49.97

30

8.68

12.15

15.46

19.68

21.97

34.30

41.44

11.00

13.20

16.56

19.18

30.00

35.69

40

6.63

11.05

14.06

15.70

24.50

29.60

7.92

50

8.43

9.94

60

9.42

11.51

18.00

21.42

100

120

14.70

17.76

60

50

40

30

20

10

0

Max

Typ

Min

V_IN= 12 V,

Tj = 25 °C

0

20

40

60

80

100

120

140

R_SS[kΩ]

Figure 44. Output ON Delay Time vs R_SS(V_IN= 12 V, Tj = 25 °C)

(Note 1) In the case that V_INis 12 V, the Approximate expression for the output rising edge delay time (t_ON) set against R_SSvalue is expressed in the equation

below.

푡_푂푁ꢂꢆ푦푝) = 0.23 × 푅_푆푆+ 1.5

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3. Setting Soft Start Function – continued

60

Max

V_IN= 24 V,

Tj = 25 °C

Typ

Min

50

40

30

20

10

0

20

40

60

80

100

120

140

R_SS[kΩ]

Figure 45. Output ON Delay Time vs R_SS(V_IN= 24 V, Tj = 25 °C)

(Note 2) In the case that V_INis 24 V, the Approximate expression for the output rising edge delay time (t_ON) set against R_SSvalue is expressed in the equation

below.

푡_푂푁ꢂꢆ푦푝) = 0.27 × 푅_푆푆+ 2.56

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3. Setting Soft Start Function – continued

Table 4. Output ON Slew Rate against R_SSValue (Tj = 25 °C)

Output ON Slew Rate (SR_ON) [V/ms]

R_SS[kΩ]

V_IN= 12 V

Typ

V_IN= 24 V

Typ

Min

Max

3.42

Min

Max

4.42

15

20

1.46

2.44

2.17

1.66

1.24

0.93

0.81

0.54

0.49

1.89

3.15

2.84

2.12

1.55

1.34

1.09

0.75

0.61

1.30

1.00

0.74

0.56

0.49

0.32

0.29

3.03

2.32

1.73

1.30

1.13

0.75

0.69

1.71

1.27

0.93

0.80

0.65

0.45

0.37

3.98

2.97

2.17

1.88

1.52

1.05

0.86

30

40

50

60

100

120

4

3

2

1

0

V_IN= 12 V,

Tj = 25 °C

Max

Typ

Min

0

20

40

60

80

100

120

140

R_SS[kΩ]

Figure 46. Output ON Slew Rate vs R_SS(V_IN= 12 V, Tj = 25 °C)

5

4

3

2

1

0

V_IN= 24 V,

Tj = 25 °C

Max

Typ

Min

0

20

40

60

80

100

120

140

R_SS[kΩ]

Figure 47. Output ON Slew Rate vs R_SS(V_IN= 24 V, Tj = 25 °C)

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Function Description – continued

4. Thermal Shutdown Function, ΔTj Protection Function

4.1 Thermal Shutdown Function (Thermal Shutdown Detection T_TSD, Thermal Shutdown Hysteresis T_TSDHYS

)

This IC has a built-in TSD function. When the temperature of the IC reaches Thermal Shutdown Detection (T_TSD) =

175 °C (Typ) or more, the output is turned off, and the FLAG outputs Low. Hysteresis (T_TSDHYS) is installed for thermal

shutdown function, and output automatically returns to normal when chip temperature become 160 °C (Typ) or less.

The condition for Latch-Off is when Variable Overcurrent Detection (I_OCD2) is reached and the temperature of IC

reaches Thermal Shutdown Detection (T_TSD) = 175 °C (Typ) or more. The condition for Latch-off Release is the

switching of EN voltage (V_EN) or IN voltage (V_IN).

4.2 ΔTj Protection Function (ΔTj Protection T_DTJ, ΔTj Protection Hysteresis T_DTJHYS

)

This IC has a ΔTj protection function. The output is turned off when chip temperature difference (ΔTj) of Power MOS

FET (T_POWER-MOS) and control (T_AMB) in the IC rises to 105 °C (Typ) or more. Furthermore, hysteresis (T_DTJHYS) is

installed for ΔTj protection function, and returns to its normal state when ΔTj becomes 75 °C (Typ) or less.

Figure 48 is shown that the timing chart of thermal shutdown function and ΔTj protection function with Latch-off

function.

The condition for Latch-off is when Thermal Shutdown Detection (T_TSD) is operated and Variable Overcurrent

Detection (I_OCD2) is reached.

EN

I_OCD1

I_OCD2

I_OUT

T_POWER-MOS

Thermal Shutdown Detection

T_TSD

Δ Tj Protection

Detect

T_AMB

T_DTJ

T_DTJ- T_DTJHYS

Tj

FLAG

Latch-off Release

Latch-off

ΔTj Protection Operation

Figure 48. Timing chart of thermal shutdown function and ΔTj protection function with Latch-off function

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4.2 ΔTj Protection Function (ΔTj Protection T_DTJ, ΔTj Protection Hysteresis T_DTJHYS) – continued

Figure 49 is shown that the timing chart of thermal shutdown function and ΔTj protection function without Latch-off

function.

The condition for without the activation of the Latch-off is when Thermal Shutdown Detection (T_TSD) is operated and

Variable Overcurrent Detection (I_OCD2) is not reached.

EN

I_OCD1

I_OCD2

I_OUT

Thermal Shutdown

Detection

T_POWER-MOS

T_TSD

T_TSDHYS

Δ Tj Protection

Detect

T_AMB

T_DTJ- T_DTJHYS

T_DTJ

Tj

FLAG

ΔTj Protection Operation

TSD Operation

Enable OFF

Figure 49. Timing chart of thermal shutdown function and ΔTj protection function without Latch-off function

4.3 The case of connecting the capacitance load

At startup, the load connected is used to detect ΔTj protection function. The R_SSregion where ΔTj protection function

is detected versus the output current (I_OUT

protection function.

)

^{(Note 3)}are shown in Figure 50 to Figure 55^{(Note 4)}. Pay attention to detect ΔTj

(Note 3) I_OUTis not including the capacitance load current at startup.

(Note 4) This results are used evaluation board of ROHM.

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4.3 The case of connecting the capacitance load – continued

120

105

90

V_IN= 12 V,

Tj = 25 °C,

C_OUT= 0 to 470 μF

SRon(MIN)

SR_ON(MIN)

SRon(TYP)

SR_ON(TYP)

SR (MAX)

SRon(MAX)

ON

75

ΔTj Protection

not detected

60

45

30

15

0

0.5

1

1.5

2

2.5

3

3.5

4

I_OUT[A]

Figure 50. ΔTj protection function detection region at startup (V_IN= 12 V, C_OUT= 0 to 470 μF)

120

V_IN= 24 V,

Tj = 25 °C,

C_OUT= 0 μF

ΔTj

Protection

detected

105

90

75

60

45

30

15

SRon(MIN)

SR_ON(MIN)

SRon(TYP)

SR_ON(TYP)

SRon(MAX)

SR_ON(MAX)

0

0.5

1

1.5

2

2.5

3

3.5

4

I_OUT[A]

Figure 51. ΔTj protection function detection region at startup (V_IN= 24 V, C_OUT= 0 μF)

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4.3 The case of connecting the capacitance load – continued

120

105

90

V_IN= 24 V,

Tj = 25 °C,

C_OUT= 100 μF

SRon(MIN)

SR_ON(MIN)

SRon(TYP)

SR_ON(TYP)

SRon(MAX)

SR_ON(MAX)

75

ΔTj

Protection

detected

60

45

30

15

0

0.5

1

1.5

2

2.5

3

3.5

4

I_OUT[A]

Figure 52. ΔTj protection function detection region at startup (V_IN= 24 V, C_OUT= 100 μF)

120

V_IN= 24 V,

Tj = 25 °C,

105

C_OUT= 220 μF

SRon(MIN)

SR_ON(MIN)

90

75

60

45

30

15

SRon(TYP)

SR_ON(TYP)

SRon(MAX)

SR_ON(MAX)

ΔTj

Protection

detected

0

0.5

1

1.5

2

2.5

3

3.5

4

I_OUT[A]

Figure 53. ΔTj protection function detection region at startup (V_IN= 24 V, C_OUT= 220 μF)

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4.3 The case of connecting the capacitance load – continued

120

105

90

V_IN= 24 V,

Tj = 25 °C,

C_OUT= 330 μF

SRon(MIN)

SR_ON(MIN)

SRon(TYP)

SR_ON(TYP)

SR (MAX)

SRon(MAX)

ON

75

ΔTj

Protection

detected

60

45

30

15

0

0.5

1

1.5

2

2.5

3

3.5

4

I_OUT[A]

Figure 54. ΔTj protection function detection region at startup (V_IN= 24 V, C_OUT= 330 μF)

120

V_IN= 24 V,

Tj = 25 °C,

C_OUT= 470 μF

105

90

75

60

45

30

15

SRon(MIN)

SR_ON(MIN)

SRon(TYP)

SR_ON(TYP)

SR (MAX)

SRon(MAX)

ON

ΔTj

Protection

detected

0

0.5

1

1.5

2

2.5

3

3.5

4

I_OUT[A]

Figure 55. ΔTj protection function detection region at startup (V_IN= 24 V, C_OUT= 470 μF)

5. Output Load is Open

When EN is OFF and no load is connected to OUT, output voltage does not fall to GND potential.

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I/O Equivalence Circuit

SS

ILIM

4 kΩ 10 kΩ

10 kΩ

1 kΩ 12 kΩ

10 kΩ

SS

ILIM

FLAG

EN

10 kΩ

150 Ω

EN

FLAG

OUT

IN

OUT

Resistance in the figures are typical values.

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Operational Notes

1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power

supply pins.

2. Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at

all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic

capacitors.

3. Ground Voltage

Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.

4. Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large currents. Also ensure that the ground traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5. Recommended Operating Conditions

The function and operation of the IC are guaranteed within the range specified by the recommended operating

conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical

characteristics.

6. Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow

instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power

supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and

routing of connections.

7. Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may

subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply

should always be turned off completely before connecting or removing it from the test setup during the inspection

process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during

transport and storage.

8. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and

unintentional solder bridge deposited in between pins during assembly to name a few.

9. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small

charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and

cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the

power supply or ground line.

10. Ceramic Capacitor

When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

11. Thermal Shutdown Function (TSD)

This IC has a built-in thermal shutdown function that prevents heat damage to the IC. Normal operation should always

be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the

junction temperature (Tj) will rise which will activate the TSD function that will turn OFF power output pins. When the Tj

falls below the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD function operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD function be used in a set design or for any purpose other than protecting the IC from

heat damage.

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BV1HAL85EFJ

Operational Notes – continued

12. Over Current Protection Function (OCP)

This IC incorporates an integrated overcurrent protection function that is activated when the load is shorted. This

protection function is effective in preventing damage due to sudden and unexpected incidents. However, the IC should

not be used in applications characterized by continuous operation or transitioning of the protection function.

13. Active Clamp Operation

The IC integrates the active clamp function to internally absorb the reverse energy which is generated when the

inductive load is turned off. When the active clamp operates, the thermal shutdown function does not work. Decide a

load so that the reverse energy is active clamp tolerance (refer to Figure 28. Active Clamp Energy vs Output Current)

or under when inductive load is used.

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BV1HAL85EFJ

Ordering Information

B V 1 H A L

8

5 E F

J

-

E 2

Package

EFJ: HTSOP-J8

Packaging and forming specification

E2: Embossed tape and reel

Marking Diagram

HTSOP-J8 (TOP VIEW)

Part Number Marking

1 H A L 8 5

LOT Number

Pin 1 Mark

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BV1HAL85EFJ

Physical Dimension and Packing Information

Package Name

HTSOP-J8

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11.May.2020 Rev.001

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BV1HAL85EFJ

Revision History

Date

Revision

001

Changes

11.May.2020

New Release

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TSZ22111 • 15 • 001

Notice

Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,

OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you

intend to use our Products in devices requiring extremely high reliability (such as medical equipment ^{(Note 1)}, transport

equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car

accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or

serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.

Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any

damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or

extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any

special or extraordinary environments or conditions. If you intend to use our Products under any special or

extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of

product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.

However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble

cleaning agents for cleaning residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PGA-E

Rev.004

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl₂, H₂S, NH₃, SO₂, and NO₂

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PGA-E

Rev.004


型号：	BV1HAL85EFJ
厂家：	ROHM
描述：	BV1HAL85EFJ是1个电路内置了Nch MOSFET的高边负载开关，输入电压范围为8.0V～32.0V。内置过电流保护功能、过热保护功能、软启动功能、低电压时输出OFF功能，具备过电流和过热的错误FLAG通知引脚。单芯片即可实现电源线的电源管理。开关软启动过电流保护
文件：	总43页 (文件大小：2028K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BV1HAL85EFJ [ROHM]

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