2SD2670 [ROHM]

Low frequency amplifier; 低频放大器
2SD2670
型号: 2SD2670
厂家: ROHM    ROHM
描述:

Low frequency amplifier
低频放大器

放大器
文件: 总3页 (文件大小:90K)
中文:  中文翻译
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2SD2670  
Transistors  
Low frequency amplifier  
2SD2670  
zExternal dimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
Driver  
Each lead has same dimensions  
0.4  
1.0MAX  
0.85  
0.7  
(
3
)
0~0.1  
zFeatures  
(1)  
(2)  
0.95 0.95  
1.9  
1) A collector current is large.  
2) VCE(sat) 250mV  
At lc=1.5A / lB=30mA  
0.16  
2.9  
(1) Base  
(2) Emitter  
(3) Collector  
ROHM : TSMT3 Abbreviated symbol : XX  
2SD2670  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
15  
12  
6
Unit  
V
V
VCBO  
VCEO  
VEBO  
V
I
C
3
6
500  
1 2  
A
Collector current  
Power siddipation  
I
CP  
A1  
mW  
W
P
C
Junction temperature  
Range of storage temperature  
1 Single pulse, Pw=1ms  
Tj  
Tstg  
150  
55 to +150  
°C  
°C  
2 Mounted on a 25×25×t 0.8mm Ceramic substrate  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
120  
360  
30  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
15  
12  
6
100  
100  
250  
680  
V
V
I
I
I
C
=10µA  
=1mA  
C
V
E
=10µA  
CB=15V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
270  
nA  
nA  
mV  
MHz  
pF  
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current gain  
V
I
C
=1.5A, I  
CE=2V, I  
CE=2V, I  
B
=30mA  
=500mA∗  
=−500mA, f=100MHz∗  
h
V
V
V
C
Transition frequency  
f
T
E
CB=10V, I  
E=0A, f=1MHz  
Collector output capacitance  
Cob  
Pulse  
Rev.A  
1/2  
2SD2670  
Transistors  
zPackaging specifications  
package  
Taping  
TL  
Type  
Code  
Basic ordering unit (pieces) 3000  
2SD2670  
zElectrical characteristic curves  
10  
10  
1000  
Ta=25 C  
Pulsed  
VCE=2V  
Pulsed  
IC/IB=20/1  
CE=2V  
Pulsed  
V
Ta=25 C  
Ta=100 C  
Ta=25 C  
1
Ta=40 C  
Ta=45 C  
IC/IB=50/1  
100  
1
Ta=100 C  
I
C/I  
B
=10/1  
0.1  
IC/IB=20/1  
0.01  
0.001  
0.1  
0.001  
10  
0.001  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : I  
C
(A)  
Fig.3 Base-emitter saturation voltage  
vs.collector current  
Fig.2 Collector-emitter saturation voltage  
vs. collector current  
Fig.1 DC current gain  
vs. collector current  
1000  
1000  
10  
IC=0A  
f=1MHz  
Ta=25 C  
Ta=25 C  
VCE=2V  
f= 100MHz  
IC/IB=20/1  
Pulsed  
Ta=100 C  
Ta=25 C  
1
Cib  
Ta=45 C  
100  
0.1  
0.01  
100  
Cob  
0.001  
10  
0.01  
10  
0.001  
0.1  
1
10  
0.1  
1
10  
0.01  
0.1  
1
10  
100  
EMITTER CURRENT : IE (A)  
EMITTER TO BASE VOLTAGE : VEB(V)  
COLLECTOR TO BASE VOLTAGE : VCB(V)  
BASE TO EMITTER CURRENT : VBE (V)  
Fig.5 Gain bandwidth product  
vs. emitter current  
Fig.4 Grounded emitter propagation  
characteristics  
Fig.6 Collector output capacitance  
vs. collector-base voltage  
Emitter input capacitance  
vs. emitter-base voltage  
Rev.A  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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