2SD2672 [ROHM]
Low frequency amplifier; 低频放大器
| 型号： | 2SD2672 |
| 厂家： | 
ROHM |
| 描述： | Low frequency amplifier |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2672
Transistors
Low frequency amplifier
2SD2672
!External dimensions (Units : mm)
!Application
Low frequency amplifier
Driver
2.8
1.6
!Features
1) A collector current is large. (4A)
2) VCE(sat) ≤ 250mV
At IC = 2A / IB = 40mA
0.3 0.6
Each lead has same dimensions
ROHM : TSMT3
Abbreviated symbol : YX
(1) Emitter
(2) Base
(3) Collector
!Packaging specifications
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Symbol
Limits
15
12
6
4
8
Unit
V
V
V
A
Package
Taping
T146
VCBO
VCEO
VEBO
Code
Basic ordering unit (pieces)
Type
Collector-emitter voltage
Emitter-base voltage
3000
2SD2672
I
C
Collector current
I
CP
A
P
Tj
Tstg
C
500
150
−55~+150
mW
°C
°C
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, PW=1ms
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
Min.
Typ.
−
Max.
−
Unit
V
Conditions
15
12
6
I
I
I
C
=10µA
=1mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
V
C
−
−
V
E
=10µA
CB=15V
EB=6V
I
CBO
EBO
CE(sat)
FE
−
−
100
100
250
680
−
nA
nA
mV
−
V
V
I
−
−
Emitter cutoff current
V
−
70
−
I
C=2A, I
B
=40mA
=200mA
=−200mA, f=100MHz
=0A, f=1MHz
Collector-emitter saturation voltage
DC current gain
h
270
−
V
V
V
CE=2V, I
C
f
T
250
60
MHz
pF
CE=2V, IE
Transition frequency
CB=10V, I
E
Cob
−
−
Corrector output capacitance
Pulsed
1/2
2SD2672
Transistors
!Electrical characteristic curves
1
1000
1
0.1
Ta=125°C
I
C/IB=20/1
I
C/IB=20/1
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
Ta=25°C
Ta=−40°C
Ta=25°C
100
0.1
Ta=125°C
Ta=125°C
0.01
0.001
Ta=−40°C
V
CE=2V
Pulsed
0.01
10
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
Fig.3 Collector-emitter saturation voltage
vs. collector current
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
vs. collector current
10
V
1000
1000
BE=2V
Ta=25°C
Pulsed
V
CE=−2V
Cib
f=100MHz
1
Cob
100
Ta=25°C
Ta=125°C
100
0.1
Ta=−40°C
10
0.01
Ta
=
25℃
0A
1MHz
I
C=
f
=
0.001
1
10
0
1
2
0.01
0.1
1
10
0.001
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB V)
(
BASE TO EMITTER CURRENT : VBE (V)
EMITTER CURRENT : IE (A)
COLLECTOR TO BASE VOLTAGE : VCB V)
(
Fig.5 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Fig.6 Gain bandwidth product
vs. emitter current
Fig.4 Grounded emitter propagation
characteristics
10000
Ta=25°C
CE=−5V
f=100MHz
V
tdon
1000
100
tstg
tf
10
1
tr
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.7 Switching time
2/2
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