2SD2671TL [ROHM]
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN;
| 型号： | 2SD2671TL |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN 放大器 |
| 文件： | 总3页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2671
Transistors
Low frequency amplifier
2SD2671
zExternal dimensions (Unit : mm)
zApplication
Low frequency amplifier
Driver
TSMT3
1.0MAX
2.9
0.4
0.85
0.7
(
(
)
)
3
zFeatures
1) A collector current is large.
2) VCE(sat) : max. 370mV
At lc=1.5A / lB=75mA
( )
2
1
0.95 0.95
1.9
0.16
(1) Base
(2) Emitter
(3) Collector
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emiter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Limits
30
30
6
2
4
Unit
V
V
V
A
A∗1
mW
W
Collector current
Power dissipation
ICP
500
PC
∗2
1
Junction temperature
Range of storage temperautre
∗1 Single pluse, Pw=1ms
Tj
Tstg
150
−55 to +150
°C
°C
∗2 Mounted on a 25×25×
t0.8mm Ceramic substrate
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
Min.
Typ.
Max.
Unit
V
Conditions
Collector-base breakdown voltae
Collector-emitter breakdown voltae
Emitter-base breakdown voltage
Collector cutoff current
30
30
6
−
−
−
−
−
180
−
280
20
−
−
−
100
100
370
680
−
I
I
I
C
=10µA
=1mA
V
C
V
E
=10µA
CB=30V
EB=6V
I
CBO
EBO
CE(sat)
FE
−
−
−
270
−
nA
nA
mV
−
MHz
pF
V
V
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current gain
V
I
C
=1.5A, I
CE=2V, I
CE=2V, I
B
=75mA
=200mA∗
=−200mA, f=100MHz∗
h
V
V
V
C
Transition frequency
f
T
E
CB=10V, I
E
=0A, f=1MHz
Collector output capacitance
Cob
−
−
∗ Pulsed
Rev.B
1/2
2SD2671
Transistors
zPackaging specifications
Package
Taping
TL
Type
Code
Basic ordering unit (Pieces)
3000
2SD2671
zElectrical characteristic curves
10
1000
10
IC/IB=20/1
Pulsed
VCE=−2V
Pulsed
IC/IB=20/1
Pulsed
Ta=125 C
Ta=25 C
Ta=−25 C
Ta=−25 C
Ta=25 C
Ta=125 C
1
Ta=−25 C
Ta=25 C
Ta=125 C
1
100
0.1
0.1
0.001
10
0.001
0.01
0.001
0.01
0.1
1
10
0.01
0.1
1
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.3 Base-emitter saturation voltage
vs. collector current
Fig.1 DC current gain
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
vs. collector current
10
1000
1000
VCE=−2V
Pulsed
Ta=25 C
VCE=−2V
f= 100MHz
IC=0A
f=1MHz
Ta=25 C
Cob
Ta=125 C
Ta=25 C
1
Ta=−25 C
0.1
100
100
Cib
0.01
0.001
10
0.01
10
0.001
0.6
0.8
1.2
1
0.4
0
1.4
0.2
0.1
1
10
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
BASE TO EMITTER CURRENT : VBE (V)
EMITTER CURRENT : IE (A)
Fig.4 Grounded emitter propagation
characteristics
Fig.5 Gain bandwidth product
vs. emitter current
Fig.6 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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