2SC5876 [ROHM]
Medium power transistor (60V, 0.5A); 中等功率晶体管（ 60V ， 0.5A ）
| 型号： | 2SC5876 |
| 厂家： | 
ROHM |
| 描述： | Medium power transistor (60V, 0.5A) |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5876
Transistor
Medium power transistor (60V, 0.5A)
2SC5876
!External dimensions (Units : mm)
!Features
1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
UMT3
1.25
2.1
4) Complements the 2SA2088
0.1Min.
Each lead has same dimensions
(1)Emitter
(2)Base
(3)Collector
Abbreviated symbol : VS
!Applications
Small signal low frequency amplifier
High speed switching
!Structure
NPN Silicon epitaxial planar transistor
!Packaging specifications
Package
Code
Taping
T106
Type
Basic ordering unit
(pieces)
3000
2SC5876
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
60
Unit
VCBO
VCEO
VEBO
V
V
V
A
A
60
6
I
C
0.5
1.0
Collector current
Power dissipation
1
2
I
CP
P
C
200
mW
Junction temperature
Tj
150
°C
°C
Range of storage temperature
Tstg
−55~+150
1 Pw=10ms
2 Each terminal mounted on a recommended land.
1/3
2SC5876
Transistor
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
−
Conditions
Unit
V
BVCBO
BVCEO
BVEBO
60
−
Collector−base breakdown voltage
Collector−emitter breakdown voltage
I
I
C
=
100µA
−
−
−
V
C=
1mA
60
6
V
−
I
E
=
100µA
Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
−
−
µA
µA
V
V
CB
EB
=40V
−
−
−
1.0
1.0
300
390
−
I
CBO
EBO
CE(sat)
FE
=4V
I
Collector−emitter staturation voltage
DC current gain
IC=100mA, IB=10mA
V
150
mV
−
−
120
−
V
CE
=2V, I
C
=50mA
h
1
Transition frequency
300
fT
MHz
pF
V
V
CE
CB
=
10V, I
10V, I
E
E
= −100mA, f=10MHz
−
=
=0mA, f=1MHz
Collector output capacitance
Turn-on time
−
−
−
−
5
Cob
Ton
Tstg
ns
ns
ns
70
I
I
I
C
=500mA,
50mA
B2= −50mA
−
−
−
B1
=
Storage time
130
1
Fall time
Tf
VCC 25V
80
1 Pulse measurement
!hFE RANK
Q
R
120-270
180-390
!Electrical characteristic curves
10
1000
100
1000
100
10
Single non
repetitive pulse
V
CE=2V
Ta=25°C
CC=25V
/I =10/1
Ta=125°C
V
I
C B
Tstg
500µs
1
Ta=25°C
1ms
10ms
Ta= −40°C
Tf
100ms
DC
Ton
0.1
10
0.01
1
0.001
0.01
0.1
1
10
0.1
1
10
100
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : I
C
(A)
Fig.2 Switching Time
Fig.1 Safe operating area
Fig.3 DC current gain vs. collector
current
1000
10
10
Ta=25°C
CE=5V
Ta=25°C
IC/IB=10/1
V
1
0.1
1
100
10
1
VCE=2V
Ta=125°C
V
CE=3V
IC/IB=20/1
0.1
Ta=25°C
Ta= −40°C
I
C/I
B
=10/1
0.01
0.001
0.01
0.001
0.01
0.1
1
0.01
0.1
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs. collector
current
Fig.5 Collector-emitter saturation voltage
vs. collector current
Fig.6 Collector-emitter saturation voltage
vs. collector current
2/3
2SC5876
Transistor
10
1000
100
1
Ta=25°C
IC/IB=10/1
V
CE=10V
Ta= −40°C
1
Ta=125°C
0.1
Ta=25°C
Ta=125°C
Ta=25°C
0.1
10
1
Ta= −40°C
V
CE=2V
0.01
0.01
0
0.5
1
1.5
0.001
0.01
0.1
1
10
−0.001
−0.01
−0.1
−1
−10
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(A)
EMITTER CURRENT : I
E
(A)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Ground emitter propagat on
characteristics
Fig.9 Transition frequency
100
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.10 Collector output capacitance
!Switching characteristics measurement circuits
RL=50Ω
V
IN
I
I
B1
B2
I
C
V
CC 25V
P
W
P
W
50 S
Duty cycle 1%
I
B1
I
B2
Base current
waveform
90%
I
C
Collector current
waveform
10%
Ton
Tstg Tf
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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