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2SC5876_1 [ROHM]

Medium power transistor (60V, 0.5A); 中等功率晶体管（ 60V ， 0.5A ）
2SC5876_1
型号： 2SC5876_1
厂家： ROHM    ROHM
描述：

Medium power transistor (60V, 0.5A)
中等功率晶体管（ 60V ， 0.5A ）

晶体 晶体管
文件： 总4页 (文件大小：64K)
中文：  中文翻译
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2SC5876  
Transistor  
Medium power transistor (60V, 0.5A)  
2SC5876  
zExternal dimensions (Unit : mm)  
zFeatures  
1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA)  
2) Low saturation voltage, typically  
(Typ. : 150mV at IC = 100mA, IB = 10mA)  
3) Strong discharge power for inductive load and  
capacitance load.  
UMT3  
1.25  
2.1  
4) Complements the 2SA2088  
0.1Min.  
Each lead has same dimensions  
(1)Emitter  
(2)Base  
(3)Collector  
Abbreviated symbol : VS  
zApplications  
Small signal low frequency amplifier  
High speed switching  
zStructure  
NPN Silicon epitaxial planar transistor  
zPackaging specifications  
Package  
Code  
Taping  
T106  
Type  
Basic ordering unit  
(pieces)  
3000  
2SC5876  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
60  
Unit  
VCBO  
VCEO  
VEBO  
V
V
V
A
A
60  
6
I
C
0.5  
1.0  
Collector current  
Power dissipation  
∗
1
2
I
CP  
∗
P
C
200  
mW  
Junction temperature  
Tj  
150  
°C  
°C  
Range of storage temperature  
Tstg  
−55 to +150  
∗1 Pw=10ms  
∗2 Each terminal mounted on a recommended land.  
Rev.A  
1/3  
2SC5876  
Transistor  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
−
Conditions  
Unit  
V
BVCBO  
BVCEO  
BVEBO  
60  
−
Collector−base breakdown voltage  
Collector−emitter breakdown voltage  
I
I
C
=100µA  
=1mA  
−
−
−
V
C
60  
6
V
−
I
E
=100µA  
CB=40V  
EB=4V  
Emitter−base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
−
−
µA  
µA  
V
V
−
−
−
1.0  
1.0  
300  
390  
−
I
CBO  
EBO  
CE(sat)  
FE  
I
Collector−emitter staturation voltage  
DC current gain  
I
C
=100mA, I  
B
=10mA  
V
150  
mV  
−
−
120  
−
V
CE=2V, I =50mA  
C
h
∗1  
Transition frequency  
300  
fT  
MHz  
pF  
V
CE=10V, I  
CB=10V, I  
E
E
= −100mA, f=10MHz  
=0mA, f=1MHz  
−
V
Collector output capacitance  
Turn-on time  
−
−
−
−
5
Cob  
ton  
ns  
ns  
ns  
70  
I
I
I
V
C
=500mA,  
−
−
−
B1=50mA  
Storage time  
130  
tstg  
B2= −50mA  
∗
1
Fall time  
tf  
CC 25V  
80  
∗
1 Pulse measurement  
zhFE RANK  
Q
R
120-270  
180-390  
zElectrical characteristic curves  
10  
1000  
100  
1000  
100  
10  
Single non  
repetitive pulse  
V
CE=2V  
Ta=25°C  
Ta=125°C  
Ta=25°C  
V
CC=25V  
I
C/I  
B=10/1  
Tstg  
500µs  
1
1ms  
10ms  
Ta= −40°C  
Tf  
100ms  
DC  
Ton  
0.1  
10  
0.01  
1
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
0.01  
0.1  
1
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR EMITTER VOLTAGE : VCE (V)  
COLLECTOR CURRENT : I  
C
(A)  
Fig.2 Switching Time  
Fig.1 Safe operating area  
Fig.3 DC current gain vs. collector  
current  
1000  
10  
10  
Ta=25°C  
CE=5V  
Ta=25°C  
I
C/I  
B
=10/1  
V
1
0.1  
1
100  
10  
1
V
CE=2V  
Ta=125°C  
V
CE=3V  
IC/IB=20/1  
0.1  
Ta=25°C  
Ta= −40°C  
I
C/I  
B
=10/1  
0.01  
0.001  
0.01  
0.001  
0.01  
0.1  
1
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : I  
C
(A)  
Fig.4 DC current gain vs. collector  
current  
Fig.5 Collector-emitter saturation voltage  
vs. collector current  
Fig.6 Collector-emitter saturation voltage  
vs. collector current  
Rev.A  
2/3  
2SC5876  
Transistor  
10  
1000  
100  
1
Ta=25°C  
I
C/IB=10/1  
V
CE=10V  
Ta= −40°C  
1
Ta=125°C  
0.1  
Ta=25°C  
Ta=125°C  
Ta=25°C  
0.1  
10  
1
Ta= −40°C  
V
CE=2V  
0.01  
0.01  
0
0.5  
1
1.5  
0.001  
0.01  
0.1  
1
−0.001  
−0.01  
−0.1  
−1  
(A)  
−10  
BASE TO EMITTER VOLTAGE : VBE (V)  
COLLECTOR CURRENT : I  
C
(A)  
EMITTER CURRENT : I  
E
Fig.7 Base-emitter saturation voltage  
vs. collector current  
Fig.8 Ground emitter propagat on  
characteristics  
Fig.9 Transition frequency  
100  
Ta=25°C  
f=1MHz  
10  
1
0.1  
1
10  
100  
BASE TO COLLECTOR VOLTAGE : VCB (V)  
Fig.10 Collector output capacitance  
zSwitching characteristics measurement circuits  
RL=50Ω  
V
IN  
I
I
B1  
B2  
I
C
V
CC 25V  
P
W
P
W
50 S  
Duty cycle 1%  
I
B1  
I
B2  
Base current  
waveform  
90%  
I
C
Collector current  
waveform  
10%  
Ton  
Tstg Tf  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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