2SC5876T106 [ROHM]
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, 3 PIN;
| 型号： | 2SC5876T106 |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, 3 PIN 晶体 小信号双极晶体管 开关 光电二极管 |
| 文件： | 总4页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Medium power transistor (60V, 0.5A)
2SC5876
Features
Dimensions (Unit : mm)
1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
UMT3
1.25
2.1
4) Complements the 2SA2088
0.1Min.
Each lead has same dimensions
(1)Emitter
(2)Base
(3)Collector
Abbreviated symbol : VS
Applications
Small signal low frequency amplifier
High speed switching
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Code
Taping
T106
Type
Basic ordering unit
(pieces)
3000
2SC5876
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
60
Unit
VCBO
VCEO
VEBO
V
V
V
A
A
60
6
I
C
0.5
1.0
Collector current
Power dissipation
∗
∗
1
2
I
CP
PC
200
mW
Junction temperature
Tj
150
°C
°C
Range of storage temperature
Tstg
−55 to +150
∗
1 Pw=10ms
∗
2 Each terminal mounted on a recommended land.
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2011.03 - Rev.B
1/3
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○ 2011 ROHM Co., Ltd. All rights reserved.
2SC5876
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Max.
−
Conditions
Unit
V
BVCBO
BVCEO
BVEBO
60
−
Collector−base breakdown voltage
Collector−emitter breakdown voltage
I
I
C
=
100μA
−
−
−
V
C=
1mA
60
6
V
−
I
E
=
100μA
Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
−
−
μA
μA
V
V
CB
=
40V
−
−
−
1.0
1.0
300
390
−
I
CBO
EBO
CE(sat)
FE
EB
=
4V
I
Collector−emitter staturation voltage
DC current gain
IC=100mA, IB=10mA
V
150
mV
−
−
120
−
V
CE
=
2V, I
C
=50mA
h
∗
1
Transition frequency
300
fT
MHz
pF
V
CE
=
=
10V, I
10V, I
E= −100mA, f=10MHz
−
V
CB
E=0mA, f=1MHz
Collector output capacitance
Turn-on time
−
−
−
−
5
Cob
ton
ns
ns
ns
70
I
I
I
V
C
=500mA,
−
−
−
B1
=
50mA
Storage time
130
tstg
B2= −50mA
CC 25V
∗
1
Fall time
tf
80
∗
1 Pulse measurement
hFE RANK
Q
R
120-270
180-390
Electrical characteristic curves
1000
1000
1000
V
CE=2V
Ta=25°C
Ta=25°C
CE=5V
Ta=125°C
V
CC=25V
V
IC/IB=10/1
Tstg
100
Ta=25°C
100
10
1
V
CE=2V
Ta= −40°C
V
CE=3V
Tf
100
Ton
10
10
0.01
1
0.001
0.1
1
10
0.01
0.1
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Switching Time
Fig.2 DC current gain vs. collector
current
Fig.3 DC current gain vs. collector
current
10
10
10
1
Ta=25°C
I
C/IB=10/1
IC/IB=10/1
Ta= −40°C
1
1
Ta=125°C
Ta=25°C
Ta=125°C
IC/IB=20/1
0.1
0.1
0.01
0.1
Ta=25°C
I
C/I
B
=10/1
Ta= −40°C
0.01
0.01
0.001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.6 Base-emitter saturation voltage
vs. collector current
Fig.4 Collector-emitter saturation voltage
vs. collector current
Fig.5 Collector-emitter saturation voltage
vs. collector current
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2011.03 - Rev.B
2/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
2SC5876
Data Sheet
1
1000
100
100
Ta=25°C
f=1MHz
Ta=25°C
CE=10V
V
Ta=125°C
0.1
10
Ta=25°C
10
1
Ta= −40°C
V
CE=2V
0.01
1
0
0.5
1
1.5
−0.001
−0.01
−0.1
−1
(A)
−10
0.1
1
10
100
BASE TO EMITTER VOLTAGE : VBE (V)
BASE TO COLLECTOR VOLTAGE : VCB (V)
EMITTER CURRENT : I
E
Fig.7 Ground emitter propagat on
characteristics
Fig.8 Transition frequency
Fig.9 Collector output capacitance
Switching characteristics measurement circuits
RL=50Ω
VIN
I
B1
B2
I
C
VCC 25V
P
W
I
P
W
50 S
Duty cycle 1%
I
B1
I
B2
Base current
waveform
90%
I
C
Collector current
waveform
10%
Ton
Tstg Tf
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2011.03 - Rev.B
3/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
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R1120A
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