2SC5868TLQ [ROHM]
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN;
| 型号： | 2SC5868TLQ |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5868
Transistors
Medium power transistor (60V, 0.5A)
2SC5868
zExternal dimensions (Unit : mm)
zFeatures
1) High speed switching.
(Tf : Typ. : 80ns at IC = 500mA)
2) Low saturation voltage, typically
TSMT3
2.8
1.6
:
(Typ. 75mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2090
(1) Base
(2) Emitter
0.3 0.6
Each lead has same dimensions
(3) Collector
Abbreviated symbol : VS
zApplications
Small signal low frequency amplifier
High speed switching
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Package
Taping
TL
Code
Type
Basic ordering unit (pieces)
3000
2SC5868
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
60
Unit
VCBO
VCEO
VEBO
V
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
60
V
6
DC
Collector current
I
C
A
0.5
1.0
500
150
1
2
Pulsed
I
CP
A
P
C
mW
°C
°C
Power dissipation
Tj
Junction temperature
Range of storage temperature
Tstg
−55 to 150
1 Pw=10ms
2 Each terminal mounted on a recommended land
1/3
2SC5868
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
60
60
6
Typ.
−
Max.
−
Unit
V
Condition
=1mA
=100µA
BVCEO
BVCBO
BVEBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
I
I
C
C
−
V
−
−
V
−
E
=100µA
CB=40V
EB=4V
I
CBO
1.0
1.0
µA
µA
−
−
V
V
I
EBO
Emitter cut-off current
−
−
1
1
I
I
C
=100mA
=10mA
CE=2V
V
CE (sat)
300
390
mV
Collector-emitter saturation voltage
DC current gain
−
75
B
V
hFE
−
120
−
I
C=50mA
V
CE=10V
f
T
−
−
MHz
pF
Transition frequency
−
−
300
5
I
E
= −100mA
f=10MHz
CB=10V
=0mA
f=1MHz
V
Cob
Corrector output capacitance
IE
2
I
I
I
C=500mA
Ton
Tstg
Tf
−
−
−
ns
ns
ns
Turn-on time
Storage time
Fall time
−
−
−
70
130
80
B1=50mA
B2= −50mA
V
CC 25V
1 Non repetitive pulse
2 See Switching charactaristics measurement circuits
zhFE RANK
Q
R
120−270
180−390
zElectrical characteristic curves
1000
100
10
1000
10
Ta=25°C
CC=25V
/ I =10 / 1
VCE=2V
V
I
C
B
Tstg
1
Ta=125°C
Ta=25°C
Ta= −40°C
100
Tf
100ms
10ms
1ms
Ton
0.1
DC
500µs
Single
non repetitive
Pulsed
1
10
0.01
0.01
0.001
0.01
0.1
1
0.1
1
10
0.1
1
10
100
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Switching Time
Fig.3 DC Current Gain vs.
Fig.1 Safe Operating Area
Collector Current (Ι)
1000
100
10
10
10
Ta=25°C
Ta=25°C
IC / IB=10 / 1
1
0.1
1
0.1
VCE=5V
VCE=3V
VCE=2V
Ta=125°C
Ta=25°C
Ta= −40°C
I
I
C
C
/ I
/ I
B
B
=20 / 1
=10 / 1
1
0.01
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
Fig.4 DC Current Gain vs.
Fig.6 Collector-Emitter Saturation
Collector Current (ΙΙ)
Voltage vs. Collector Current (ΙΙ)
2/3
2SC5868
Transistors
1000
100
10
10
1
Ta=25°C
I
C
/ I
B
=10 / 1
VCE=2V
VCE=10V
Ta=125°C
Ta=25°C
Ta= −40°C
1
0.1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.01
0.01 0
1
0.001
0.01
0.1
1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
Fig.7 Base-Emitter Saturation
Fig.8 Grounded Emitter
Fig.9 Transition Frequency
Voltage vs. Collecter Current
Propagation Characteristics
100
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.10 Collector Output Capacitance
zSwitching characteristics measurement circuits
RL=50Ω
V
IN
I
I
B1
B2
I
C
VCC 25V
P
W
P
W
50 S
Duty cycle ≤ 1%
I
B1
I
B2
Base current
waveform
90%
I
C
Collector current
waveform
10%
Ton
Tstg Tf
3/3
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