2SC5525 [ROHM]
Transistor;
| 型号： | 2SC5525 |
| 厂家： | 
ROHM |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5103 / 2SC5525
Transistors
High-speed Switching Transistor (60V, 5A)
2SC5103 / 2SC5525
!Features
!External dimensions (Units : mm)
CE(sat)
1) Low V
C
(Typ. 0.15V at I / I 3 / 0.15A)
B =
2) High speed switching (tf : Typ. 0.1 µs at I 3A)
C =
2SC5103
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952 / 2SA2006.
5.5
0.9
1.5
C0.5
0.8Min.
(1) Base(Gate)
1.5
!Absolute maximum ratings (Ta = 25°C)
(2) Collector(Drain)
(3) Emitter(Source)
2.5
ROHM : CPT3
EIAJ : SC-63
9.5
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
100
Unit
V
V
VCBO
VCEO
VEBO
60
5
V
A(DC)
A(Pulse)
W
W(Tc=25°C)
W
5
10
Collector current
IC
*
1
10
2
25
2SC5103
2SC5525
2SC5525
Collector power
dissipation
10.0
4.5
P
C
2.8
3.2
φ
W(Tc=25°C)
°C
Junction temperature
Storage temperature
Tj
Tstg
150
−55 ∼ +150
°C
∗
Single pulse Pw=100ms
1.2
1.3
0.8
2.54
0.75
( )
(1) Base Gate
2.54
2.6
(
) (
) (
)
1
2
(
(
)
3
(
)
)
(2) Collector Drain
(
)
)
(
1
2
3
(3) Emitter Source
!Packaging specifications and hFE
ROHM : TO-220FN
Type
Package
2SC5103
CPT3
PQ
2SC5525
TO-220FN
EF
hFE
Code
Basic ordering unit (pieces)
TL
2500
−
500
!Electrical characteristics (Ta = 25°C)
Typ.
Conditions
Symbol
Min.
Max.
Unit
Parameter
−
−
−
−
−
0.15
−
−
−
−
−
−
−
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
V
V
V
µA
µA
V
V
V
V
−
I
I
I
V
V
I
I
I
I
C
C
E
=
=
=
50µA
1mA
50µA
100
60
5
−
−
−
−
−
−
82
100
−
−
−
10
10
0.3
0.5
1.2
1.5
270
320
−
I
CBO
CB
=
=
100V
5V
I
EBO
Emitter cutoff current
EB
C
/I
/I
/I
/I
B
=
3A/0.15A
4A/0.2A
3A/0.15A
4A/0.2A
∗
V
CE(sat)
BE(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
C
C
C
B
B
B
=
=
=
∗
∗
∗
V
DC current
transfer ratio
2SC5103
2SC5525
hFE
V
CE/IC = 2V/1A
−
−
MHz
pF
µs
µs
µs
f
T
120
80
−
−
0.1
Transition frequency
Output capacitance
Turn-on time
V
V
I
I
V
CB
CE
=
=
10V , I
10V , I
E
E
=
=
0.5A , f
0A , f
=
30MHz
∗
Cob
on
stg
−
= 1MHz
t
0.3
1.5
0.3
C
=
=
3A , R
−IB2
CC 30V
L
=
10Ω
Storage time
Fall time
Measured using pulse current.
t
−
−
B1
= 0.15A
t
f
∗
相关型号：
2SC5526F
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN
ROHM
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