2SC5526 [ETC]
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 12A I(C) | TO-220FN ; 晶体管| BJT | NPN | 60V V（ BR ） CEO | 12A I（C ） | TO- 220FN\n
| 型号： | 2SC5526 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 12A I(C) | TO-220FN
|
| 文件： | 总1页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5526
Transistors
High-speed Switching Transistor
(60V, 12A)
2SC5526
!External dimensions (Units: mm)
!Features
1) Low saturation voltage.
C
(Typ. V
CE(sat) =
0.15V at I / I 6A / 0.3A)
B =
10.0
4.5
2) High switching speed.
2.8
3.2
φ
(Typ. tf = 0.1µs at Ic = 6A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA2007.
1.2
1.3
0.8
0.75
2.54
2.54
2.6
(
) (
)
(
2
3
1
)
(
)
(1) Base Gate
( ) ( )
( )
1 2
3
(
)
)
(2) Collector Drain
(3) Emitter Source
!Absolute maximum ratings (Ta = 25°C)
(
ROHM : TO-220FN
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
V
100
60
V
5
V
A(DC)
A(Pulse)
W
12
I
C
Collector current
20
*
2
25
P
C
Collector power dissipation
W(Tc=25°C)
°C
Junction temperature
Storage temperature
Tj
150
Tstg
−55 ∼ +150
°C
Single pulse, Pw=100ms
*
!Packaging specifications and hFE
Type
2SC5526
Package
TO-220FN
EF
hFE
Code
Basic ordering unit (pieces)
−
500
!Electrical characteristics (Ta = 25°C)
Parameter
Typ.
Conditions
Symbol
Min.
Max.
Unit
−
−
−
−
−
−
−
−
−
−
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
−
BVCBO
BVCEO
BVEBO
100
60
5
−
−
−
−
−
−
100
V
V
V
µA
µA
V
V
V
V
−
I
I
I
V
C
=
=
=
CB
EB
50µA
1mA
50µA
C
E
I
CBO
10
10
0.3
0.5
1.2
1.5
320
−
=
=
100V
5V
I
EBO
V
Emitter cutoff current
I
I
I
I
C
/I
/I
/I
/I
B
=
6A/0.3A
8A/0.4A
6A/0.3A
8A/0.4A
*
V
CE(sat)
BE(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
C
C
C
B
B
B
=
=
=
*
*
*
V
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
V
V
CE
/
I
C
=
2V/2A
10V , I = 1A , f
10V , I 0A , f
= 5
0.3A
hFE
−
f
T
MHz
pF
80
CB
=
=
E
=
=
30MHz
1MHz
*
−
Cob
−
−
−
V
CE
E =
200
−
−
µs
I
C
=
6A , R
−IB2
CC 30V
L
Ω
ton
tstg
0.3
1.5
0.3
µs
µs
I
B1
=
=
Storage time
−
V
Fall time
tf
0.1
Measured using pulse current
*
相关型号：
2SC5526F
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN
ROHM
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