2SC5532B [ETC]
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-220FN ; 晶体管| BJT | NPN | 400V V（ BR ） CEO | 5A I（C ） | TO- 220FN\n
| 型号： | 2SC5532B |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-220FN
|
| 文件： | 总1页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5532
Transistors
High-voltage Switching Transistor
(400V, 5A)
2SC5532
!Features
CE(sat)
C
B
1) Low V
. (Typ. 0.6V at I / I = 5/1A)
2) High switching speed. (tf : Max. 1µs at Ic =4A)
3) Wide SOA (safe operating area).
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
400
400
7
Unit
VCBO
VCEO
VEBO
V
V
V
I
C
5
A
Collector current
I
CP
7
A
*
Collector power dissipation
Junction temperature
Storage temperature
W (Tc = 25°C)
P
C
30
150
Tj
°C
°C
Tstg
-55~+150
Single pulse, Pw = 100ms.
*
!Packaging specifications and hFE
Type
2SC5532
Package
TO-220FN
h
FE
AB
-
Code
Basic ordering unit (pieces)
500
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
400
400
-
-
-
-
V
V
I
I
I
C
C
E
= 50µA
= 1mA
7
-
-
-
V
= 50µA
CB = 400V
EB = 5V
I
CBO
-
10
10
1
µA
µA
V
V
V
Emitter cutoff current
I
EBO
-
-
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
-
-
I
C
/I
/I
B
= 5A/1A
= 5A/1A
*
*
V
BE(sat)
-
-
1.5
V
I
C
B
-
-
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
h
FE
16
-
50
-
V
V
V
CE/IC = 5V/2A
f
T
15
80
-
MHz
pF
µs
µs
µs
CB = 10V , I
CB = 10V , I
E
= −0.5A , f = 5MHz
= 0A , f = 1MHz
*
Cob
-
-
E
t
on
-
1
I
I
C
= 4A , R
B1 = −IB2 = 0.4A
CC 200V
L
= 50Ω
Storage time
t
stg
-
-
2.5
1
Fall time
t
f
-
-
V
Measured using pulse current.
*
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