2SC554-C [SECOS]
NPN Plastic Encapsulated Transistor;型号: | 2SC554-C |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | NPN Plastic Encapsulated Transistor |
文件: | 总2页 (文件大小:224K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SC554
2A, 100V
ꢀPꢀ Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-89
ꢀ
Low Saturation Voltage
High Speed Switching
ꢀ
4
MARKING
1
C554
2
3
B
C
A
E
E
C
PACKAGE INFORMATION
Package
MPQ
Leader Size
B
D
K
SOT-89
1K
7 inch
F
G
H
ORDER INFORMATION
J
L
Collector
24
Part Number
Type
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
2SC554
Lead (Pb)-free
A
B
C
D
4.40
3.94
1.40
2.25
4.60
4.25
1.60
2.60
G
H
J
0.40
0.58
1.50 TYP
3.00 TYP
1
Base
2SC554-C
Lead (Pb)-free and Halogen-free
K
0.32
0.35
0.52
0.44
E
F
1.55 TYP.
L
0.89
1.20
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
100
100
6
Unit
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
Collector Current-Continuous
Collector Power Dissipation
Thermal Resistance From Junction-Ambient
Junction & Storage Temperature
2
A
PC
500
250
mW
°C/W
°C
RθJA
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
Typ.
Max.
Unit
V
Test conditions
IC=0.1mA, IE=0
100
-
-
-
-
100
V
IC=1mA, IB=0
6
-
-
-
V
IE=0.1mA, IC=0
-
1
µA
µA
VCB=100V, IE=0
Emitter Cut-off Current
IEBO
-
-
1
VEB=4V, IC=0
DC Current Gain
hFE
82
-
-
270
0.2
0.3
-
VCE=3V, IC=100mA
IC=500mA, IB=25mA
IC=1A, IB=50mA
VCE=5V, IC=100mA
VCB=10V, IE=0, f=1MHz
-
Collector-Emitter Saturation Voltage
VCE(sat)
V
-
-
Transition Frequency
fT
30
-
-
MHz
pF
Collector Output Capacitance
Cob
16
-
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Oct-2018 Rev. A
Page 1 of 2
2SC554
2A, 100V
ꢀPꢀ Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Oct-2018 Rev. A
Page 2 of 2
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