2SC3271F/M [ROHM]
0.1A, 300V, NPN, Si, POWER TRANSISTOR, TO-126FP, TO-126FP, 3 PIN;
| 型号： | 2SC3271F/M |
| 厂家： | 
ROHM |
| 描述： | 0.1A, 300V, NPN, Si, POWER TRANSISTOR, TO-126FP, TO-126FP, 3 PIN 晶体 放大器 晶体管 |
| 文件： | 总1页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F
Transistors
Chroma Amplifier Transistor (300V, 0.1A)
2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F
!Features
!External dimensions (Units: mm)
CEO
1) High breakdown voltage. (BV =300V)
2) Low collector output capacitance.
2SC4061K
CB
(Typ. 3pF at V =30V)
3) Ideal for chroma circuit.
1.6
2.8
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
0.3to0.6
ROHM : SMT3
!Absolute maximum ratings (Ta=25°C)
Each lead has same dimensions
EIAJ : SC-59
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
300
300
5
Unit
V
VCBO
VCEO
VEBO
V
2SC3415S
4
2
V
I
C
100
0.2
mA
2SC4061K
2SC3415S
2SC4015
0.3
Collector power
dissipation
W
P
C
1
*
0.45
1.2
2SC3271F
(1) Emitter
(2) Collector
(3) Base
W(Tc=25˚C)
5
Junction temperature
Storage temperature
Tj
150
-55~+150
˚C
˚C
0.45
2.5 0.5
Tstg
5
2
Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
*
ROHM : SPT
EIAJ : SC-72
( )
1
(
)
(
)
3
Taping specifications
2SC4015
2.5
6.8
!Packaging specifications and hFE
Type
2SC4061K 2SC3415S 2SC4015 2SC3271F
Package
SMT3
NP
SPT
NP
-
ATV
N
TO-126FP
N
hFE
0.65Max.
Marking
Code
AN
*
-
-
-
0.5
T146
3000
TP
5000
TV2
2500
(1) Emitter
Basic ordering unit (pieces)
( )
1
( ) ( )
2 3
1000
(2) Collector
(3) Base
Denotes hFE
2.54 2.54
*
1.05
0.45
ROHM : ATV
2SC3271F
Taping specifications
7.8
3.2
Tor 3.3
Rear 3.19
φ
φ
C0.7
1.6
0.95
1.75
2.3
0.8
2.3
(1) Emitter
(2) Collector
(3) Base
0.7
1.76
(
) ( ) (
)
1 2
3
ROHM : TO-126FP
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
300
300
5
-
-
-
-
V
V
I
I
I
C
=
50µA
100µA
50µA
C=
-
-
V
E=
I
CBO
EBO
CE(sat)
-
-
0.5
0.5
2
µA
µA
V
V
V
CB
=
200V
Emitter cutoff current
I
-
-
EB
=4V
Collector-emitter saturation voltage
V
-
-
I
C/I
B
=
50mA/5mA
2SC4061K, 2SC3415S
2SC4015, 2SC3271F
56
56
50
-
-
-
180
120
-
-
DC current
transfer ratio
h
FE
V
CE/I
C=10V/10mA
-
Gain bandwidth product
f
T
100
3
MHz
pF
V
CE
CB
=
=
30V, I
30V, I
E
E
=-10mA, f
=100MHz
Collector output capacitance
Cob
-
V
=
0A, f=1MHz
相关型号：
2SC3271F/MP
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126FP, 3 PIN
ROHM
2SC3271F/NP
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126FP, 3 PIN
ROHM
2SC3272/M
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ROHM
2SC3272/MN
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ROHM
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