2SC3272 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管![2SC3272](http://pdffile.icpdf.com/pdf1/p00153/img/icpdf/2SC3272_846725_icpdf.jpg)
型号: | 2SC3272 |
厂家: | ![]() |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3272
DESCRIPTION
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·For power amplification
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Emitter
2
Collector
Base
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
300
UNIT
V
Open emitter
Open base
300
V
Open collector
5
V
0.1
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
0.2
A
PC
TC=25℃
10
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3272
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
PARAMETER
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
CONDITIONS
MIN
TYP.
MAX
UNIT
IC=50mA ;IB=5m A
2.0
V
V
V
V
IC=10μA;IE=0
300
300
5
IC=1mA; IB=0
IE=10μA; IC=0
IC=10mA ; VCE=10V
VCB=200V; IE=0
VEB=4V; IC=0
39
180
0.5
0.5
ICBO
Collector cut-off current
μA
μA
pF
IEBO
Emitter cut-off current
COB
Output capacitance
IE=0; VCB=30V;f=1MHz
IC=10mA ; VCB=30V
3
fT
Transition frequency
50
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3272
PACKAGE OUTLINE
Fig.2 outline dimensions
3
相关型号:
![](http://pdffile.icpdf.com/pdf1/p00021/img/page/2SC3272_105350_files/2SC3272_105350_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00021/img/page/2SC3272_105350_files/2SC3272_105350_2.jpg)
2SC3272/M
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ROHM
![](http://pdffile.icpdf.com/pdf2/p00223/img/page/2SB1086-R_1300663_files/2SB1086-R_1300663_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00223/img/page/2SB1086-R_1300663_files/2SB1086-R_1300663_2.jpg)
2SC3272/MN
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ROHM
![](http://pdffile.icpdf.com/pdf2/p00223/img/page/2SB1086-R_1300663_files/2SB1086-R_1300663_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00223/img/page/2SB1086-R_1300663_files/2SB1086-R_1300663_2.jpg)
2SC3272/MP
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ROHM
![](http://pdffile.icpdf.com/pdf1/p00021/img/page/2SC3272_105350_files/2SC3272_105350_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00021/img/page/2SC3272_105350_files/2SC3272_105350_2.jpg)
2SC3272/N
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ROHM
![](http://pdffile.icpdf.com/pdf2/p00223/img/page/2SB1086-R_1300663_files/2SB1086-R_1300663_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00223/img/page/2SB1086-R_1300663_files/2SB1086-R_1300663_2.jpg)
2SC3272/NP
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ROHM
![](http://pdffile.icpdf.com/pdf1/p00021/img/page/2SC3272_105350_files/2SC3272_105350_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00021/img/page/2SC3272_105350_files/2SC3272_105350_2.jpg)
2SC3272/P
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ROHM
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