2SC3272 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3272 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3272
DESCRIPTION
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·For power amplification
PINNINGꢀ see Fig.2ꢀ
PIN
1
DESCRIPTION
Emitter
2
Collector
Base
3
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
300
UNIT
Open emitter
Open base
V
V
V
A
A
W
ꢀ
300
Open collector
5
0.1
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
0.2
PC
TC=25ꢀ
10
Tj
150
Tstg
-55~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3272
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter saturation voltage
Collector-base breakdown voltage
IC=50mA ;IB=5m A
2.0
V
V
V
V
IC=10µA;IE=0
300
300
5
Collector-emitter breakdown voltage IC=1mA; IB=0
Emitter-base breakdown voltage
DC current gain
IE=10µA; IC=0
IC=10mA ; VCE=10V
VCB=200V; IE=0
39
180
0.5
0.5
ICBO
Collector cut-off current
Emitter cut-off current
Output capacitance
µA
µA
IEBO
VEB=4V; IC=0
COB
IE=0; VCB=30V;f=1MHz
IC=10mA ; VCB=30V
3
pF
fT
Transition frequency
50
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3272
PACKAGE OUTLINE
Fig.2 outline dimensions
3
相关型号：
2SC3272/M
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