2SB1241 [ROHM]
Power Transistor; 功率晶体管
| 型号： | 2SB1241 |
| 厂家： | 
ROHM |
| 描述： | Power Transistor |
| 文件： | 总3页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB1260 / 2SB1181 / 2SB1241
Transistors
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
!Features
!External dimensions (Units : mm)
1) High breakdown voltage and high
current.
2SB1260
2SB1181
+0.2
2.3
6.5±0.2
−
0.1
C0.5
CEO
C
BV = −80V, I =−1A
+0.2
5.1
+0.2
4.5
0.5±
0.1
−
0.1
−0.1
+0.2
1.5
FE
2) Good h linearity.
−0.1
1.6±0.1
CE(sat)
3) Low V
.
4) Complements the 2SD1898 /
2SD1863 / 2SD1733.
0.65
±0.1
0.75
(1) (2) (3)
0.9
0.2 2.3±
+0.1
0.4
−0.05
0.55
±0.1
0.5±0.1
3.0±0.2
2.3±
0.2
0.4±0.1
1.5±0.1
0.4±0.1
1.5±0.1
1.0±0.2
!Structure
(1) (2) (3)
Epitaxial planar type
PNP silicon transistor
(1) Base
(2) Collector
(3) Emitter
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
Abbreviated
symbol: BH
ROHM : MPT3
EIAJ : SC-62
∗
2SB1241
2.5±0.2
6.8±0.2
0.65Max.
0.5±0.1
(1) (2)
2.54
(3)
2.54
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
* Denotes hFE
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
-80
V
V
-80
-5
V
I
C
-1
A(DC)
A(Pulse)
Collector current
*1
I
CP
-2
0.5
2SB1260
*2
*3
2
W
Collector power
dissipation
PC
2SB1241, 2SB1181
2SB1181
1
10
W(Tc=25˚C)
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
-55~+150
*1 Single pulse, Pw=100ms
*2 When mounted on a 40×40×0.7 mm ceramic board.
*3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
2SB1260 / 2SB1181 / 2SB1241
Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
-80
-
-
-
I
I
I
C
=-50µA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
-80
-
V
C=-1mA
-5
-
-
V
E
=-50µA
CB=-60V
EB=-4V
I
CBO
EBO
CE(sat)
-
-
-1
-1
-0.4
390
390
-
µA
µA
V
V
V
I
-
-
-
Emitter cutoff current
V
-
82
120
-
IC/IB=-500mA/-50mA
Collector-emitter saturation voltage
2SB1260, 2SB1181
DC current transfer ratio
-
-
h
FE
V
CE=-3V, I =-0.1A
C
2SB1241
-
-
2SB1260, 2SB1241
Transition frequency
100
100
25
MHz
MHz
pF
V
V
V
CE=-5V, IE=50mA, f=30MHz
f
T
2SB1181
-
-
CE=-10V, I
CB=-10V, I
E
E
=50mA, f=30MHz
=0A, f=1MHz
Output capacitance
Cob
-
-
!Packaging specifications and hFE
Package
Code
Taping
TV2
TL
T100
Basic ordering
unit (pieces)
2500
2500
-
1000
hFE
Type
-
-
2SB1260
2SB1241
2SB1181
PQR
QR
-
-
PQR
-
FE
h
values are classified as follows :
Item
P
Q
R
hFE
82~180
120~270
180~390
!Electrical characteristic curves
1000
500
-1000
Ta=25˚C
Ta=25˚C
Ta=25˚C
-1.0
-0.8
-0.6
VCE=-5V
-0.45mA
-0.4mA
-0.35mA
-0.3mA
-100
-10
200
100
50
VCE=-3V
-0.25mA
-0.2mA
-0.4
-0.2
0
-1V
-0.15mA
-0.1mA
-1
20
-0.05mA
I
B
=0mA
10
-1 -2
-0.1
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : VBE (V)
-5 -10 -20 -50-100 -200-500-1000-2000
COLLECTOR CURRENT : I (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
C
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
Fig.3 DC current gain vs.
collector current
2SB1260 / 2SB1181 / 2SB1241
Transistors
1000
1000
500
Ta=25˚C
CE=-5V
Ta=25˚C
Ta=25˚C
f=1MHz
=0A
V
500
-2
-1
I
E
200
100
50
200
100
-0.5
50
-0.2
20
10
20
10
I
C/I
B
=20
-0.1
10
-0.05
5
5
-0.02
-0.01
2
1
2
1
1
2
5
10 20
50 100 200 5001000
(mA)
-1 -2
-5 -10 -20 -50-100-200-500-1000-2000
COLLECTOR CURRENT : I (mA)
-0.1 -0.2
-0.5 -1 -2
-5 -10 -20 -50 -100
C
EMITTER CURRENT : I
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.5 Gain bandwidth product vs.
emitter current
Fig.4 Collector-emitter saturation
voltage vs. collector current
Fig.6 Collector output capacitance
vs. collector-base voltage
10
1000
Ta=25˚C
Ta=25˚C
f=1MHz
IC=0A
Ta=25˚C
I
I
C Max. (Pulse)
5
2
Single
*
-2
Single
*
I
C Max. (Pulse)
nonrepetitive
pulse
500
nonrepetitive
pulse
DC
C Max
.
1
-1
P
500m
W
=
200
100
50
10ms
P
-0.5
W=100ms
200m
100m
50m
-0.2
-0.1
20m
10m
5m
Printed circuit board:
1.7 mm thick with collector
copper plating at least 1 cm2.
*
20
10
-0.05
2m
1m
0.1 0.2 0.5
1
2
5 10 20 50 100200 5001000
-0.1 -0.2
-0.5
-1
-2
-5
-10
-0.5 -1
-2
-5 -10 -20
-50 -100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig. 7 Emitter input capacitance
vs. emitter-base voltage
Fig.9 Safe operating area (2SB1241)
Fig. 8 Safe operating area
(2SB1260)
-5
Ta=25˚C
Single
*
-2
-1
nonrepetitive
pulse
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-0.1 -0.2 -0.5 -1 -2
-5 -10 -20 -50 -100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
(2SB1181)
相关型号：
2SB1241TV2
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN
ROHM
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN
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2SB1241TV2/R
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