2SB1241QTV2 [ROHM]
Transistor;
| 型号： | 2SB1241QTV2 |
| 厂家： | 
ROHM |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB1260 / 2SB1181 / 2SB1241
Transistors
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
zExternal dimensions (Unit : mm)
zFeatures
1) Hight breakdown voltage and high current.
2SB1260
2SB1181
+
0.2
2.3
BVCEO= −80V, I
2) Good hFE linearty.
3) Low VCE(sat)
C
= −1A
6.5 0.2
0.2
−
0.1
C0.5
+
5.1
+
0.2
0.5 0.1
−
0.1
4.5
−0.1
+
0.2
1.5
1.6 0.1
−0.1
.
4) Complements the 2SD1898 / 2SD1863 /
2SD1733.
0.65 0.1
0.75
(1) (2) (3)
0.9
+
0.1
0.4
−0.05
0.55 0.1
1.0 0.2
0.5 0.1
3.0 0.2
2.3 0.2 2.3 0.2
0.4 0.1
1.5 0.1
0.4 0.1
1.5 0.1
(1) (2) (3)
(1) Base
(2) Collector
(3) Emitter
zStructure
Epitaxial planar type
PNP silicon transistor
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
ROHM : MPT3
EIAJ : SC-62
Abbreviated
symbol: BE
∗
2SB1241
2.5 0.2
6.8 0.2
0.65Max.
0.5 0.1
(1) (2)
2.54
(3)
2.54
1.05
0.45 0.1
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
Denotes hFE
∗
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−80
−80
−5
Unit
VCBO
VCEO
VEBO
V
V
V
I
C
−1
A (DC)
A (Pulse)
Collector current
∗1
I
CP
−2
0.5
2
2SB1260
∗2
∗3
W
Collector power
dissipation
P
C
2SB1241, 2SB1181
2SB1181
1
10
W (Tc=25°C
)
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to 150
1 2SB1260 : Pw=20ms duty=1/2
∗
2SB1241 : Single pulse, Pw=100ms
2 2SB1260 : When mounted on a 40
×
40×
0.7 mm ceramic board.
∗
3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
∗
Rev.C
1/3
2SB1260 / 2SB1181 / 2SB1241
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
−80
−80
−5
−
I
I
I
C
= −50
= −1mA
= −50
µ
A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
V
C
−
−
V
E
µA
I
CBO
EBO
CE(sat)
−
−1
−1
−0.4
390
390
−
µ
A
A
V
V
CB= −60V
EB= −4V
I
−
−
µ
Emitter cutoff current
V
−
−
V
I
C/I
B
= −500mA/ −50mA
= −0.1A
=50mA, f=100MHz
Collector-emitter saturation voltage
2SB1260, 2SB1181
DC current transfer ratio
82
120
−
−
−
−
h
FE
V
CE= −3V, I
C
2SB1241
−
Transition frequency 2SB1181
f
T
100
20
25
MHz
pF
pF
V
V
CE= −10V, I
CB= −10V
E
2SB1260
−
−
Output capacitance
Cob
I =0A
f=1MHz
E
2SB1181, 2SB1241
−
−
zPackaging specifications and hFE
Package
Code
Taping
TV2
TL
T100
Basic ordering
unit (pieces)
2500
2500
1000
hFE
Type
2SB1260
2SB1241
2SB1181
PQR
QR
−
−
−
−
−
PQR
−
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180 120 to 270 180 to 390
zElectrical characteristic curves
1000
500
−1000
Ta=25°C
Ta=25°C
Ta
=25°C
−1.0
−0.8
−0.6
V
CE= −5V
−4.5mA
−100
−10
−4mA
−3.5mA
−3mA
200
100
50
V
CE= −3V
−2.5mA
−2mA
−1V
−0.4
−0.2
0
−1.5mA
−1mA
−1
20
−0.5mA
I
B
=0mA
10
−1 −2
−0.1
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current
Rev.C
2/3
2SB1260 / 2SB1181 / 2SB1241
Transistors
1000
1000
500
Ta
=25°C
Ta=25°C
Ta
1MHz
0A
=25°C
500
V
CE= −5V
f
=
−2
−1
I =
E
200
100
200
100
50
−0.5
50
−0.2
20
10
20
10
I
C/I
B
=20
−0.1
10
−0.05
5
5
−0.02
2
1
2
1
−0.01
1
2
5
10 20
50 100 200 500 1000
−0.1 -0.2
−0.5 -1 −2
−5 −10 −20 −50 −100
−
1
−
2
−
5
−
10
−
20
−50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I (mA)
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
Fig.5 Gain bandwidth product
vs. emitter current
Fig.4 Collector-emitter saturation
voltage vs. collector current
1000
500
10
−10
Ta=25°C
Ta
1MHz
0A
=
25°C
Ta=25°C
∗Single
5
2
Single
∗
f
=
nonrepetitive
I
C Max.(Pulse)
I
C Max (Pulse)
.
nonrepetitive
pulse
I =
C
pulse
IC Max
.
DC
P
−1
1
W
=
10ms
500m
200
100
50
200m
100m
50m
−0.1
20m
10m
5m
−0.01
20
10
Printed circuit board:
∗
1.7 mm thick with collector
copper plating at least 1 cm2.
2m
1m
0.1 0.2 0.5
−0.001
−0.1 −0.2
−0.5
−1
−2
−5
−10
1
2
5 10 20 50 100200 5001000
−0.1
−1
−10
−100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig. 7 Emitter input capacitance
vs. emitter-base voltage
Fig.9 Safe operating area
(2SB1241)
Fig.8 Safe operating area
(2SB1260)
−5
Ta=25°C
Single
∗
−2
−1
nonrepetitive
pulse
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
(2SB1181)
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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