2SB1241TV2/R [ROHM]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN;
| 型号： | 2SB1241TV2/R |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN 电视 |
| 文件： | 总3页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistor (80V, 1A)
2SB1260 / 2SB1181 / 2SB1241
Features
Dimensions (Unit : mm)
1) Hight breakdown voltage and high current.
BVCEO=80V, IC = 1A
2) Good hFE linearty.
3) Low VCE(sat).
Complements the 2SD1898 / 2SD1863 / 2SD1733.
2SB1260
2SB1181
+
0.2
2.3
6.5 0.2
0.2
C0.5
+
5.1
+
0.2
0.5 0.1
4.5
1.5
1.6 0.1
0.65 0.1
0.75
(1) (2) (3)
0.9
+0.1
0.4
0.55 0.1
1.0 0.2
0.5 0.1
3.0 0.2
2.3 0.2 2.3 0.2
0.4 0.1
1.5 0.1
0.4 0.1
1.5 0.1
Structure
Epitaxial planar type
PNP silicon transistor
(1) (2) (3)
(1) Base
(2) Collector
(3) Emitter
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
ROHM : MPT3
EIAJ : SC-62
2SB1241
2.5 0.2
6.8 0.2
0.65Max.
0.5 0.1
(1) (2)
2.54
(3)
2.54
1.05
0.45 0.1
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−80
−80
−5
Unit
V
VCBO
VCEO
VEBO
V
V
I
C
−1
A (DC)
Collector current
∗1
I
CP
−2
A (Pulse)
0.5
2
2SB1260
∗2
∗3
W
Collector power
dissipation
PC
2SB1241, 2SB1181
2SB1181
1
10
W (Tc=25°C
)
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
1 2SB1260 : Pw=20ms duty=1/2
2SB1241 : Single pulse, Pw=100ms
2 2SB1260 : When mounted on a 40
∗
×40
×
0.7 mm ceramic board.
∗
3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
∗
www.rohm.com
2011.05 - Rev.F
1/2
c
○ 2011 ROHM Co., Ltd. All rights reserved.
2SB1260 / 2SB1181 / 2SB1241
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
−80
−80
−5
−
I
I
I
C
= −50
= −1mA
= −50
μ
A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
V
C
−
−
V
E
μ
A
I
CBO
EBO
CE(sat)
−
−1
−1
−0.4
390
390
−
μ
A
A
V
CB= −60V
EB= −4V
I
−
−
μ
V
Emitter cutoff current
V
−
−
V
I
C/I
B
= −500mA/ −50mA
= −0.1A
=50mA, f=100MHz
Collector-emitter saturation voltage
2SB1260, 2SB1181
120
120
−
−
−
−
h
FE
V
CE= −3V, I
C
DC current transfer ratio
2SB1241
−
Transition frequency 2SB1181
f
T
100
20
25
MHz
pF
pF
V
CE= −10V, I
CB= −10V
E
V
I
2SB1260
−
−
Output capacitance
Cob
E=0A
2SB1181, 2SB1241
−
−
f=1MHz
Packaging specifications and hFE
Package
Code
Taping
TV2
TL
T100
Basic ordering
unit (pieces)
2500
2500
1000
hFE
Type
2SB1260
2SB1241
2SB1181
QR
QR
QR
−
−
−
−
−
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
Electrical characteristic curves
4.5mA
5.0mA
4.0mA
3.5mA
500
400
300
200
100
0
1000
1000
100
10
Ta=25
℃
3.0mA
Ta=25
℃
VCE=-5V
2.5mA
2.0mA
100
10
1
VCE=-3V
1.5mA
1.0mA
VCE=-1V
IB=0.5mA
Ta=25
℃
Pulsed
0.1
1
10
100
1000
0
0.5
1
1.5
2
0.2
0.4
0.6
0.8
1
COLLECTOR CURRENT : IC [mA]
BASE TO EMITTER VOLTAGE : VBE [V]
COLLECOR - EMITTER VOLTAGE : VCE [V]
Fig.1 Ground Emitter Output Characteristics
Fig.2 Grounded Emitter Propagation
Characteristics
Fig.3 DC Current Gain vs Collector Current
1
1000
100
10
1000
Ta=25
℃
Ta=25
℃
Ta=25
℃
VCE=-5V
f=1MHz
IE=0A
Cib
IC=0A
0.1
IC/IB=20
10
100
Cob
0.01
10
0.1
1
10
100
1000
1
10
100
1000
1
10
100
COLLECTOR CURRENT : IC [mA]
EMITTER CURRENT : IE [mA]
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
Fig.4 Collector-Emitter Saturation
Voltage v s Collector Current
Fig.5 Transition Frewuency v s
Emitter Current
Fig.6 Emitter Input Capacitance v s. Emitter-Base Voltage
Collector Output Capacitance v s. Collector-Base
www.rohm.com
2011.05 - Rev.F
2/2
c
○ 2011 ROHM Co., Ltd. All rights reserved.
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