1SS400CSFH [ROHM]

Rectifier Diode, 1 Element, 0.1A, 90V V(RRM), Silicon, VMN2, 2 PIN;
1SS400CSFH
型号: 1SS400CSFH
厂家: ROHM    ROHM
描述:

Rectifier Diode, 1 Element, 0.1A, 90V V(RRM), Silicon, VMN2, 2 PIN

光电二极管
文件: 总5页 (文件大小:914K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
AEC-Q101 Qualified  
Switching Diode  
1SS400CSFH  
Applications  
Dimensions (Unit : mm)  
Land size figure (Unit : mm)  
High speed switching  
0.55  
0.16±0.05  
0.6±0.05  
Features  
1)Ultra small mold type.(VMN2)  
2)High reliability.  
VMN2  
0.156  
Construction  
0.37±0.03  
0.35±0.1  
Silicon epitaxial planer  
Structure  
ROHM : VMN2  
dot (year week factory)  
Taping dimensions (Unit : mm)  
φ1.55  
0.2±0.05  
2±0.05  
4±0.1  
φ0.5  
0.52  
2±0.05  
4.0±0.1  
0.7±0.05  
Absolute maximum ratings (Ta=25C)  
Parameter  
Limits  
90  
Symbol  
VRM  
VR  
Unit  
V
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
80  
V
Forward current (repetitive peak)  
Average rectified forward current  
Surge current (1S)  
225  
IFM  
mA  
mA  
mA  
C  
C  
100  
Io  
Isurge  
Tj  
500  
Junction temperature  
150  
Storage temperature  
55 to 150  
Tstg  
Electrical characteristics (Ta=25C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
VF  
IR  
IF=100mA  
Forward voltage  
-
-
-
-
-
-
-
-
1.2  
100  
3.0  
4.0  
Reverse current  
VR=80V  
nA  
pF  
ns  
Capacitancebetween terminal  
Reverse recovery time  
VR=0.5Vf=1.0MHz  
VR=6VIF=10mARL100  
Ct  
trr  
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© 2011 ROHM Co., Ltd. All rights reserved.  
2011.12 - Rev.A  
1/4  
Data Sheet  
1SS400CSFH  
Ta=150°C  
1000  
100000  
10000  
1000  
100  
Ta=125°C  
Ta=75°C  
Ta=150°C  
100  
10  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=25°C  
1
10  
Ta=-25°C  
Ta=-25°C  
0.1  
0.01  
1
0.1  
0
200  
400  
600  
800  
1000 1200 1400  
0
20  
40  
60  
80  
100  
120  
REVERSE VOLTAGEVR(V)  
FORWARD VOLTAGEVF(mV)  
VR-IR CHARACTERISTICS  
VF-IF CHARACTERISTICS  
920  
910  
900  
890  
880  
870  
10  
f=1MHz  
Ta=25°C  
VF=100mA  
n=30pcs  
1
AVE:888.3mV  
0.1  
0
5
10  
15  
20  
VF DISPERSION MAP  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
200  
180  
160  
140  
120  
100  
80  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
Ta=25°C  
VR=80V  
n=30pcs  
Ta=25°C  
f=1MHz  
VR=0.5V  
n=10pcs  
AVE:0.595pF  
60  
AVE:20.90nA  
40  
20  
0
Ct DISPERSION MAP  
IR DISPERSION MAP  
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© 2011 ROHM Co., Ltd. All rights reserved.  
2/4  
2011.12 - Rev.A  
Data Sheet  
1SS400CSFH  
20  
15  
10  
5
2
1.8  
1.6  
1.4  
1.2  
1
Ta=25°C  
VR=6V  
IF=10mA  
RL=100Ω  
n=10pcs  
IFSM  
8.3ms  
1cyc  
AVE:1.489ns  
AVE:3.90A  
0
trr DISPERSION MAP  
IFSM DISPERSION MAP  
10  
10  
IFSM  
8.3ms 8.3ms  
1cyc  
5
5
0
1
0
10  
NUMBER OF CYCLES  
100  
1
10  
100  
TIME:t(ms)  
IFSM-CYCLE CHARACTERISTICS  
IFSM-t CHARACTERISTICS  
10  
9
8
7
6
5
4
3
2
1
0
1000  
Rth(j-a)  
Rth(j-c)  
AVE:6.48kV  
100  
AVE:1.60kV  
C=200pF  
R=0Ω  
C=100pF  
R=1.5kΩ  
10  
0.001  
0.01  
0.1  
1
10  
100  
1000  
TIME:t(s)  
ESD DISPERSION MAP  
Rth-t CHARACTERISTICS  
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© 2011 ROHM Co., Ltd. All rights reserved.  
3/4  
2011.12 - Rev.A  
Data Sheet  
1SS400CSFH  
0.3  
0.2  
0.1  
0.003  
0.002  
0.001  
0
D=1/2  
D=1/2  
DC  
Sin(θ180)  
Sin(θ180)  
DC  
0
0
0.05  
0.1  
0.15  
0.2  
0
20  
40  
60  
80  
100  
120  
AVERAGE RECTIFIED  
FORWARD CURRENTIo(A)  
Io-Pf CHARACTERISTICS  
REVERSE VOLTAGE:VR(V)  
VR-PR CHARACTERISTICS  
0.3  
0.25  
0.2  
DC  
0.15  
0.1  
D=1/2  
Sin(θ180)  
0.05  
0
0
25  
50  
75  
100  
125  
150  
CASE TEMPARATURE:Ta(°C)  
DERATING CURVE(Io-Ta)  
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© 2011 ROHM Co., Ltd. All rights reserved.  
4/4  
2011.12 - Rev.A  
Notice  
N o t e s  
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More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
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R1120A  

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