1SS400CST2RA [ROHM]
Switching Diode; 开关二极管
| 型号： | 1SS400CST2RA |
| 厂家： | 
ROHM |
| 描述： | Switching Diode |
| 文件： | 总5页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Switching Diode
1SS400CS
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
High speed switching
0.55
0.16±0.05
0.6±0.05
Features
1)Ultra small mold type.(VMN2)
2)High reliability.
VMN2
0.156
Construction
0.37±0.03
0.35±0.1
Silicon epitaxial planer
Structure
ROHM : VMN2
dot (year week factory)
Taping dimensions (Unit : mm)
φ1.55
0.2±0.05
2±0.05
4±0.1
φ0.5
0.52
2±0.05
4.0±0.1
0.7±0.05
Absolute maximum ratings (Ta=25C)
Parameter
Limits
90
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
80
V
Forward current (repetitive peak)
Average rectified forward current
Surge current (1S)
225
IFM
mA
mA
mA
C
C
100
Io
Isurge
Tj
500
Junction temperature
150
Storage temperature
55 to 150
Tstg
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Conditions
VF
IR
IF=100mA
VR=80V
Forward voltage
-
-
-
-
-
-
-
-
1.2
100
3.0
4.0
Reverse current
nA
pF
ns
Capacitanceꢀbetween terminal
Reverse recovery time
VR=0.5Vꢀf=1.0MHz
Ct
trr
VR=6VꢀIF=10mAꢀRL＝100Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.12 - Rev.A
1/4
Data Sheet
1SS400CS
ꢀ
Ta=150°C
1000
100
100000
10000
1000
100
Ta=125°C
Ta=75°C
Ta=150°C
Ta=125°C
10
1
Ta=75°C
Ta=25°C
Ta=25°C
10
Ta=-25°C
Ta=-25°C
0.1
0.01
1
0.1
0
200
400
600
800
1000 1200 1400
0
20
40
60
80
100
120
REVERSE VOLTAGE：VR(V)
FORWARD VOLTAGE：VF(mV)
VR-IR CHARACTERISTICS
VF-IF CHARACTERISTICS
920
910
900
890
880
870
10
f=1MHz
Ta=25°C
VF=100mA
n=30pcs
1
AVE:888.3mV
0.1
0
5
10
15
20
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
180
160
140
120
100
80
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Ta=25°C
VR=80V
n=30pcs
Ta=25°C
f=1MHz
VR=0.5V
n=10pcs
AVE:0.595pF
60
AVE:20.90nA
40
20
0
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.12 - Rev.A
Data Sheet
1SS400CS
ꢀ
20
15
10
5
2
1.8
1.6
1.4
1.2
1
Ta=25°C
VR=6V
IF=10mA
RL=100Ω
n=10pcs
IFSM
8.3ms
1cyc
AVE:1.489ns
AVE:3.90A
0
trr DISPERSION MAP
IFSM DISPERSION MAP
10
10
IFSM
8.3ms 8.3ms
1cyc
5
5
0
1
0
10
100
1
10
100
NUMBER OF CYCLES
TIME:t(ms)
IFSM-CYCLE CHARACTERISTICS
IFSM-t CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
1000
Rth(j-a)
Rth(j-c)
AVE:6.48kV
100
AVE:1.60kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
10
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
ESD DISPERSION MAP
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.12 - Rev.A
Data Sheet
1SS400CS
ꢀ
0.3
0.2
0.1
0.003
0.002
0.001
0
D=1/2
D=1/2
DC
Sin(θ＝180)
Sin(θ＝180)
DC
0
0
0.05
0.1
0.15
0.2
0
20
40
60
80
100
120
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0.3
0.25
0.2
DC
0.15
0.1
D=1/2
Sin(θ＝180)
0.05
0
0
25
50
75
100
125
150
CASE TEMPARATURE:Ta(°C)
DERATING CURVE(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.12 - Rev.A
Notice
N o t e s
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ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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