1SS400CST5G [WILLAS]
SWITCHING Diodes; 开关二极管
| 型号： | 1SS400CST5G |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | SWITCHING Diodes |
| 文件： | 总2页 (文件大小：565K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SS400CST5G
WILLAS
SOD-923
SWITCHING Diodes
• Applications
.030(0.75)
.033(0.85)
High speed switching
• Features
1) Extremely small surface mounting type.
2) High Speed.
.022(0.55)
.026(0.65)
3) High reliability.
.037(0.95)
.041(1.05)
•Construction
Silicon epitaxial planar
Pb-Free package is available
1
2
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
CATHODE
ANODE
.012(0.30)
Marking code: 3
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Limits
90
Unit
V
VRM
VR
80
V
225
mA
mA
mA
℃
IFM
100
IO
500
Isurge
Tj
125
Junction temperature
Storage temperature
-55~+125
℃
Tstg
Electrical Ratings @TA=25℃
Parameter
Symbol Min. Typ. Max. Unit
Conditions
1.2
0.1
3.0
4
V
IF=100mA
VR=80V
Forward voltage
VF
IR
μA
pF
ns
Reverse current
VR=0.5V,f=1MHZ
Capacitance between terminals
Reverse recovery time
CT
trr
VR=6V,IF=10mA,RL=100Ω
2012-10
WILLAS ELECTRONIC CORP.
1SS400CST5G
WILLAS
ELECTRICAL CHARACTERISTIC CURVES
(Ta = 25°C)
1m
0.1m
10µ
1µ
1
100m
10m
1m
100n
10n
1n
100µ
10µ
0
3
20
40
60
80
100
120
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
REVERSE VOLTAGE : VR (V)
FORWARD VOLTAGE : VF (V)
Fig.2 Reverse characteristics
Fig.1 Forward characteristics
10
5
2
1
0
2
1
0.5
0.2
0.1
0
10
20
30
0
2
4
6
8
10
12
14
FORWARD CURRENT : I F (mA)
REVERSE VOLTAGE : VR (V)
Fig.4 Reverse recovery time characteristics
Fig.3 Capacitance between terminals
100
50
0.01µF
D.U.T.
20
10
5kΩ
SAMPLING
PULSEGENERATOR
OUTPUT50Ω
50Ω
OSCILLOSCOPE
5
2
1
Fig.6 Reverse recovery time (trr)
measurement circuit
0.1
1
10
100
1000
10,000
PULSE WIDTH : TW (ms)
Fig.5 Surge current characteristics
2012-10
WILLAS ELECTRONIC CORP.
相关型号：
1SS400G
Small surface mounting type High reliability with high surge current handing capability
TYSEMI
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