RF2422_06 [RFMD]

2.5GHZ DIRECT QUADRATURE MODULATOR; 2.5GHZ直接正交调制器
RF2422_06
型号: RF2422_06
厂家: RF MICRO DEVICES    RF MICRO DEVICES
描述:

2.5GHZ DIRECT QUADRATURE MODULATOR
2.5GHZ直接正交调制器

文件: 总6页 (文件大小:89K)
中文:  中文翻译
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RF2422  
2.5GHZ DIRECT QUADRATURE MODULATOR  
0
RoHS Compliant & Pb-Free Product  
Typical Applications  
• Digital Communications Systems  
• GSM, DCS 1800, JDC, D-AMPS Systems  
• Spread-Spectrum Communication Systems • Commercial and Consumer Systems  
• GMSK,QPSK,DQPSK,QAM Modulation  
Product Description  
The RF2422 is a monolithic integrated quadrature modu-  
lator IC capable of universal direct modulation for high-  
-A-  
0.157  
0.150  
0.008  
0.004  
frequency AM, PM, or compound carriers. This low-cost  
IC implements differential amplifiers for the modulation  
inputs, 90° carrier phase shift network, carrier limiting  
amplifiers, two matched double-balanced mixers, sum-  
ming amplifier, and an output RF amplifier which will drive  
50Ω from 800MHz to 2500MHz. Component matching,  
which can only be accomplished with monolithic con-  
struction, is used to full advantage to obtain excellent  
amplitude balance and phase accuracy.  
0.018  
0.014  
0.393  
0.386  
0.050  
0.068  
0.053  
0.244  
0.229  
8° MAX  
0° MIN  
NOTES:  
1. Shaded lead is Pin 1.  
2. All dimensions are excluding  
mold flash.  
3. Lead coplanarity - 0.005 with  
respect to datum "A".  
0.009  
0.007  
0.034  
0.016  
Optimum Technology Matching® Applied  
Package Style: SOIC-16  
Si BJT  
GaAs HBT  
SiGe HBT  
GaN HEMT  
GaAs MESFET  
9
Si Bi-CMOS  
InGaP/HBT  
Si CMOS  
Features  
SiGe Bi-CMOS  
• Single 5V Power Supply  
• Integrated RF Quadrature Network  
• No Tuning Required  
I REF  
Q REF  
GND2  
GND2  
GND2  
LO  
1
16 I SIG  
• Low LO Input Level  
2
3
4
5
6
7
8
15 Q SIG  
14 GND1  
13 GND1  
12 GND1  
11 VCC2  
10 GND1  
• Digitally Controlled Power Down Mode  
• 800MHz to 2500MHz Operation  
Σ
Ordering Information  
-45°  
RF2422  
RF2422 PCBA  
2.5GHz Direct Quadrature Modulator  
Fully Assembled Evaluation Board  
+45°  
VCC1  
PD  
POWER  
CONTROL  
9
RF OUT  
RF Micro Devices, Inc.  
7628 Thorndike Road  
Greensboro, NC 27409, USA  
Tel (336) 664 1233  
Fax (336) 664 0454  
http://www.rfmd.com  
Functional Block Diagram  
Rev A6 060203  
5-11  
RF2422  
Absolute Maximum Ratings  
Caution! ESD sensitive device.  
Parameter  
Rating  
Unit  
Supply Voltage  
-0.5 to +7.5  
V
DC  
RF Micro Devices believes the furnished information is correct and accurate  
at the time of this printing. RoHS marking based on EUDirective2002/95/EC  
(at time of this printing). However, RF Micro Devices reserves the right to  
make changes to its products without notice. RF Micro Devices does not  
assume responsibility for the use of the described product(s).  
Input LO and RF Levels  
Operating Ambient Temperature  
Storage Temperature  
+10  
-40 to +85  
-40 to +150  
dBm  
°C  
°C  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
Max.  
T=25°C, V =5V  
Carrier Input  
Frequency Range  
Power Level  
CC  
800  
-6  
2500  
+6  
MHz  
dBm  
Input VSWR  
5:1  
At 900MHz  
1.8:1  
1.2:1  
At 1800MHz  
At 2500MHz  
Modulation Input  
Frequency Range  
Reference Voltage (V  
DC  
2.0  
250  
MHz  
V
)
3.0  
REF  
Maximum Modulation (I&Q)  
V
±1.0  
V
REF  
Gain Asymmetry  
Quadrature Phase Error  
Input Resistance  
Input Bias Current  
RF Output  
0.2  
3
30  
dB  
°
kΩ  
μA  
40  
LO=2GHz and -5dBm, I&Q=2.0V , SSB  
PP  
Output Power  
-3  
+3  
dBm  
Output Impedance  
Output VSWR  
50  
3.5:1  
1.3:1  
1.15:1  
-35  
35  
35  
35  
Ω
At 900MHz  
At 2000MHz  
At 2500MHz  
Harmonic Output  
Sideband Suppression  
Carrier Suppression  
-30  
25  
30  
30  
dBc  
dB  
dB  
IM Suppression  
dB  
Intermodulation of the carrier and the  
desired RF signal  
3
25  
30  
dB  
Intermodulation of baseband signals  
Broadband Noise Floor  
At 20MHz offset, V =5V.  
CC  
Tied to V  
: ISIG, QSIG, IREF, and QREF.  
REF  
-145  
-152  
dBm/Hz  
dBm/Hz  
At 850MHz  
At 1900MHz  
Power Down  
Turn On/Off Time  
PD Input Resistance  
Power Control “ON”  
Power Control “OFF”  
Power Supply  
Voltage  
100  
2.8  
ns  
kΩ  
V
50  
Threshold voltage  
Threshold voltage  
1.0  
1.2  
5
V
V
V
mA  
μA  
Specifications  
Operating Limits  
Operating  
4.5  
6.0  
50  
25  
Current  
45  
Power Down  
5-12  
Rev A6 060203  
RF2422  
Pin  
1
Function Description  
Interface Schematic  
Reference voltage for the I mixer. This voltage should be the same as  
I REF  
Q REF  
GND2  
Q SIG  
Q REF  
the DC voltage supplied to the I SIG pin. A voltage of 3.0V is recom-  
mended. The SIG and REF inputs are inputs of a differential amplifier.  
Therefore the REF and SIG inputs are interchangeable. If swapping the  
I SIG and I REF pins, the Q SIG and Q REF also need to be swapped  
to maintain the correct phase. It is also possible to drive the SIG and  
REF inputs in a balanced mode. This will increase the gain.  
100Ω  
100Ω  
425Ω  
425Ω  
Reference voltage for the Q mixer. This voltage should be the same as  
the DC voltage supplied to the Q SIG pin. A voltage of 3.0V is recom-  
mended.  
2
3
Q SIG  
Q REF  
100Ω  
100Ω  
425Ω  
425Ω  
Ground connection of the LO phase shift network. This pin should be  
connected directly to the ground plane.  
Same as pin 3.  
Same as pin 3.  
4
5
6
GND2  
GND2  
LO  
The input of the phase shifting network. This pin has an internal DC-  
blocking capacitor. At frequencies higher than 2GHz this port is well-  
matched to 50Ω. This port is voltage driven so matching at lower fre-  
quencies is not required.  
LO  
Power supply for all circuits except the RF output stage. An external  
capacitor is needed if no other low frequency bypass capacitor is  
nearby.  
7
8
VCC1  
PD  
Power Down control. When this pin is "low", all circuits are shut off. A  
"low" is typically 1.2V or less at room temperature.When this pin is  
VCC  
200 Ω  
"high" (V ), all circuits are operating normally. If PD is below V , out-  
CC  
CC  
PD  
put power and performance will be degraded. Operating in this region is  
not recommended, although it might be useful in some applications  
where power control is required.  
This is the 50Ω RF Output. This pin has an internal DC-blocking capac-  
itor. At frequencies higher than 2GHz this port is well-matched. Typical  
impedances at lower frequencies are: 24-j30 Ω @ 1GHz, 27-j10 Ω @  
1.4GHz, 31-j3 Ω @ 1.8GHz. At those frequencies, external matching  
may be needed to optimize output power.  
9
RF OUT  
RF OUT  
Ground connection for the RF output stage. This pin should be con-  
nected directly to the ground plane.  
10  
11  
12  
GND3  
VCC2  
GND1  
Power supply for the RF Output amplifier. An external capacitor is  
needed if no other low frequency bypass capacitor is near by.  
Ground connection for the LO and baseband amplifiers, and for the  
mixers. This pin should be connected directly to the ground plane.  
Same as pin 12.  
Same as pin 12.  
13  
14  
15  
GND1  
GND1  
Q SIG  
Baseband input to the Q mixer. This pin is DC-coupled. Maximum out- See pin 2.  
put power is obtained when the input signal has a peak to peak ampli-  
tude of 2V. The recommended DC level for this pin is 3.0V. The peak  
minimum voltage on this pin (V  
- peak modulation amplitude)  
REF  
should never drop below 2.0V. The peak maximum voltage on this pin  
(V + peak modulation amplitude) should never exceed 4.0V.  
REF  
Rev A6 060203  
5-13  
RF2422  
Pin  
16  
Function Description  
Interface Schematic  
Baseband input to the I mixer. This pin is DC-coupled. Maximum output See pin 1.  
I SIG  
power is obtained when the input signal has a peak to peak amplitude  
of 2V. The recommended DC level for this pin is 3.0V. The peak mini-  
mum voltage on this pin (V  
- peak modulation amplitude) should  
REF  
never drop below 2.0V. The peak maximum voltage on this pin (V  
peak modulation amplitude) should never exceed 4.0V.  
+
REF  
Application Schematic  
AC-Coupled  
VREF  
C
R
R
R
R
I SIG  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
C
C
Q SIG  
S
LO IN  
VCC  
VCC  
-45°  
+45°  
100 nF  
100 nF  
PD  
POWER  
CONTROL  
RF OUT  
100 nF  
NOTE:  
The values of R and C depend on the minimum  
baseband frequency (i.e., the cutoff frequency of  
this high pass filter should be lower than the  
lowest frequency component in the I/Q spectrum).  
5-14  
Rev A6 060203  
RF2422  
Application Schematic  
DC-Coupled  
VREF  
I SIG  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
100 nF  
Q SIG  
Σ
LO IN  
VCC  
VCC  
-45°  
+45°  
100 nF  
100 nF  
POWER  
CONTROL  
PD  
RF OUT  
100 nF  
Evaluation Board Schematic  
1.5” x 1.5”  
(Download Bill of Materials from www.rfmd.com.)  
P1  
1
P2  
1
P1-1  
NC  
VCC  
GND  
P2-1  
NC  
REF  
2
3
2
3
GND  
50 Ω μstrip  
50 Ω μstrip  
J4  
I SIG  
P2-1  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
C1  
100 nF  
J3  
Q SIG  
Σ
50 Ω μstrip  
J1  
LO IN  
P1-1  
-45°  
+45°  
C3  
100 nF  
P1-1  
C2  
100 nF  
POWER  
CONTROL  
50 Ω μstrip  
J2  
RF OUT  
2422400A  
Rev A6 060203  
5-15  
RF2422  
Evaluation Board Layout  
Board Size 1.510” x 1.510”  
Board Thickness 0.031”, Board Material FR-4  
5-16  
Rev A6 060203  

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