RF2422_1 [RFMD]
2.5GHZ DIRECT QUADRATURE MODULATOR; 2.5GHZ直接正交调制器
| 型号： | RF2422_1 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 2.5GHZ DIRECT QUADRATURE MODULATOR |
| 文件： | 总10页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF2422
2.5GHZ DIRECT QUADRATURE MODULATOR
RoHS Compliant & Pb-Free Product
Package Style: SOIC-16
I REF
Q REF
GND2
GND2
GND2
LO
1
2
3
4
5
6
7
8
16 I SIG
Features
15 Q SIG
14 GND1
13 GND1
12 GND1
11 VCC2
10 GND1
Single 5V Power Supply
Integrated RF Quadrature
Network
Σ
No Tuning Required
Low LO Input Level
Digitally Controlled Power
Down Mode
-45°
+45°
800MHz to 2500MHz Opera-
tion
VCC1
PD
POWER
CONTROL
9
RF OUT
Applications
Digital Communications Sys-
tems
Functional Block Diagram
Product Description
Spread-Spectrum Communi-
cation Systems
The RF2422 is a monolithic integrated quadrature modulator IC capable
of universal direct modulation for high-frequency AM, PM, or compound
carriers. This low-cost IC implements differential amplifiers for the modu-
lation inputs, 90° carrier phase shift network, carrier limiting amplifiers,
two matched double-balanced mixers, summing amplifier, and an output
RF amplifier which will drive 50Ω from 800MHz to 2500MHz. Component
matching, which can only be accomplished with monolithic construction,
is used to full advantage to obtain excellent amplitude balance and phase
accuracy.
GMSK,QPSK,DQPSK,QAM
Modulation
GSM, DCS 1800, JDC, D-
AMPS Systems
Commercial and Consumer
Systems
Ordering Information
RF2422
2.5GHz Direct Quadrature Modulator
RF2422PCBA-41X Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
9
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS070817
1 of 10
RF2422
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Rating
Unit
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Supply Voltage
-0.5 to +7.5
V
DC
Input LO and RF Levels
+10
dBm
°C
Operating Ambient Temperature
Storage Temperature
-40 to +85
-40 to +150
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
°C
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
T=25°C, V =5V
Carrier Input
Frequency Range
Power Level
CC
800
-6
2500
+6
MHz
dBm
Input VSWR
5:1
At 900MHz
At 1800MHz
At 2500MHz
1.8:1
1.2:1
Modulation Input
Frequency Range
DC
250
MHz
V
Reference Voltage (V
)
2.0
3.0
REF
Maximum Modulation (I&Q)
V
±1.0
V
REF
Gain Asymmetry
Quadrature Phase Error
Input Resistance
Input Bias Current
RF Output
0.2
3
dB
°
30
kΩ
μA
40
LO=2GHz and -5dBm, I&Q=2.0V , SSB
PP
Output Power
-3
+3
dBm
Output Impedance
Output VSWR
50
3.5:1
1.3:1
1.15:1
-35
Ω
At 900MHz
At 2000MHz
At 2500MHz
Harmonic Output
-30
25
30
30
dBc
dB
Sideband Suppression
Carrier Suppression
35
35
dB
IM Suppression
35
dB
Intermodulation of the carrier and the desired
RF signal
3
25
30
dB
Intermodulation of baseband signals
Broadband Noise Floor
At 20MHz offset, V =5V.
CC
Tied to V : ISIG, QSIG, IREF, and QREF.
REF
-145
-152
dBm/Hz
dBm/Hz
At 850MHz
At 1900MHz
Power Down
Turn On/Off Time
PD Input Resistance
Power Control “ON”
Power Control “OFF”
100
2.8
ns
kΩ
V
50
Threshold voltage
Threshold voltage
1.0
1.2
V
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
2 of 10
Rev A6 DS070817
RF2422
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Power Supply
Voltage
5
V
V
Specifications
Operating Limits
Operating
4.5
6.0
50
25
Current
45
mA
μA
Power Down
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS070817
3 of 10
RF2422
Pin
1
Function
I REF
Description
Interface Schematic
Reference voltage for the I mixer. This voltage should be the same as the
DC voltage supplied to the I SIG pin. A voltage of 3.0V is recommended.
The SIG and REF inputs are inputs of a differential amplifier. Therefore the
REF and SIG inputs are interchangeable. If swapping the I SIG and I REF
pins, the Q SIG and Q REF also need to be swapped to maintain the correct
phase. It is also possible to drive the SIG and REF inputs in a balanced
mode. This will increase the gain.
Q SIG
Q REF
100
100Ω
Ω
425Ω
425Ω
Reference voltage for the Q mixer. This voltage should be the same as the
DC voltage supplied to the Q SIG pin. A voltage of 3.0V is recommended.
2
Q REF
Q SIG
Q REF
100
100Ω
Ω
425Ω
425Ω
Ground connection of the LO phase shift network. This pin should be con-
nected directly to the ground plane.
3
GND2
Same as pin 3.
Same as pin 3.
4
5
6
GND2
GND2
LO
The input of the phase shifting network. This pin has an internal DC-block-
ing capacitor. At frequencies higher than 2GHz this port is well-matched to
50Ω. This port is voltage driven so matching at lower frequencies is not
required.
LO
Power supply for all circuits except the RF output stage. An external capaci-
tor is needed if no other low frequency bypass capacitor is nearby.
7
8
VCC1
PD
Power Down control. When this pin is "low", all circuits are shut off. A "low"
VCC
is typically 1.2V or less at room temperature.When this pin is "high" (V ),
CC
200 Ω
all circuits are operating normally. If PD is below V , output power and
CC
PD
performance will be degraded. Operating in this region is not recom-
mended, although it might be useful in some applications where power
control is required.
This is the 50Ω RF Output. This pin has an internal DC-blocking capacitor.
At frequencies higher than 2GHz this port is well-matched. Typical imped-
ances at lower frequencies are: 24-j30 Ω @ 1GHz, 27-j10 Ω @ 1.4GHz, 31-
j3 Ω @ 1.8GHz. At those frequencies, external matching may be needed to
optimize output power.
9
RF OUT
RF OUT
Ground connection for the RF output stage. This pin should be connected
directly to the ground plane.
10
11
12
GND3
VCC2
GND1
Power supply for the RF Output amplifier. An external capacitor is needed if
no other low frequency bypass capacitor is near by.
Ground connection for the LO and baseband amplifiers, and for the mixers.
This pin should be connected directly to the ground plane.
Same as pin 12.
Same as pin 12.
13
14
15
GND1
GND1
Q SIG
Baseband input to the Q mixer. This pin is DC-coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude of
2V. The recommended DC level for this pin is 3.0V. The peak minimum
See pin 2.
voltage on this pin (V
- peak modulation amplitude) should never drop
REF
below 2.0V. The peak maximum voltage on this pin (V
tion amplitude) should never exceed 4.0V.
+ peak modula-
REF
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
4 of 10
Rev A6 DS070817
RF2422
Pin
16
Function
I SIG
Description
Interface Schematic
See pin 1.
Baseband input to the I mixer. This pin is DC-coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude of
2V. The recommended DC level for this pin is 3.0V. The peak minimum
voltage on this pin (V
- peak modulation amplitude) should never drop
REF
below 2.0V. The peak maximum voltage on this pin (V
tion amplitude) should never exceed 4.0V.
+ peak modula-
REF
Package Drawing
-A-
0.157
0.150
0.008
0.004
0.018
0.014
0.393
0.386
0.050
0.068
0.053
0.244
0.229
8° MAX
0° MIN
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity - 0.005 with
respect to datum "A".
0.009
0.007
0.034
0.016
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS070817
5 of 10
RF2422
Application Schematic
AC-Coupled
VREF
C
R
R
R
R
I SIG
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
C
C
Q SIG
S
LO IN
VCC
VCC
-45°
+45°
100 nF
100 nF
PD
POWER
CONTROL
RF OUT
100 nF
NOTE:
The values of R and C depend on the minimum
baseband frequency (i.e., the cutoff frequency of
this high pass filter should be lower than the
lowest frequency component in the I/Q spectrum).
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
6 of 10
Rev A6 DS070817
RF2422
Application Schematic
DC-Coupled
VREF
I SIG
1
2
3
4
5
6
7
8
16
100 nF
Q SIG
15
14
13
12
11
10
9
Σ
LO IN
VCC
VCC
-45°
+45°
100 nF
100 nF
POWER
CONTROL
PD
RF OUT
100 nF
Evaluation Board Schematic
1.5” x 1.5”
P1
P2
1
1
P1-1
VCC
GND
P2-1
REF
2
3
2
3
GND
NC
NC
50 Ω μstrip
50 Ω μstrip
J4
I SIG
P2-1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
C1
100 nF
J3
Q SIG
Σ
50 Ω μstrip
J1
LO IN
P1-1
-45°
+45°
C3
100 nF
P1-1
C2
100 nF
POWER
CONTROL
50 Ω μstrip
J2
RF OUT
2422400A
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS070817
7 of 10
RF2422
Evaluation Board Layout
Board Size 1.510” x 1.510”
Board Thickness 0.031”, Board Material FR-4
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
8 of 10
Rev A6 DS070817
RF2422
RoHS* Banned Material Content
RoHS Compliant:
Yes
0.147
0520
Rev -
e3
Package total w eight in gram
Compliance Date Code:
Bill of Materials Revision:
Pb Free Category:
Parts Per Million (PPM)
Bill of Materials
Pb
0
0
0
0
Cd
0
0
0
0
Hg
0
Cr VI
PBB
PBDE
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Die
0
0
0
0
Molding Compound
Lead Frame
Die Attach Epoxy
Wire
0
0
0
0
0
Solder Plating
This RoHS banned material content declaration was prepared solely on information, including analytical data,
provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted above.
* DIRECTIVE2002/95/EC OF THEEUROPEAN PARLIAMENT AND OF THECOUNCIL of 27 January 2003 on the restriction of
the use of certain hazardous substances in electrical and electronic equipment
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS070817
9 of 10
RF2422
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
10 of 10
Rev A6 DS070817
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