RF2423 [RFMD]
100mW SPREAD-SPECTRUM TRANSMITTER IC; 100mW的扩频发射机IC
| 型号： | RF2423 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 100mW SPREAD-SPECTRUM TRANSMITTER IC |
| 文件： | 总8页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF2423
100mW SPREAD-SPECTRUM TRANSMITTER IC
5
Typical Applications
• Digital and Analog Communication Systems • GMSK, QPSK, DQPSK, QAM Modulation
• Spread-Spectrum Communication Systems • AM, SSB, DSB Modulation
• Portable Battery-Powered Equipment
Product Description
.157
.150
.010
.004
The RF2423 is a monolithic integrated transmitter IC
capable of universal direct modulation for UHF AM, PM,
or compound carriers. The transmitter may be used
stand-alone for applications requiring not more than
100mW output power, or may be used to drive a final
power amplifier. The maximum output level is 100mW,
and is adjustable over a 25dB range by a single positive
voltage. This low-cost IC implements differential amplifi-
ers for the modulation inputs, 90 degree carrier phase
shift network, carrier limiting amplifiers, two matched dou-
bly-balanced mixers, variable gain summing amplifier for
level control, and 100mW linear (class AB) output ampli-
fier.
.018
.014
5
1
.393
.386
.050
.244
.228
.065
.043
8 °MAX
0°MIN
.050 .010
.016 .007
Optimum Technology Matching® Applied
Package Style: SOP-16
Si BJT
GaAs HBT
GaAs MESFET
!
Si Bi-CMOS
SiGe HBT
Si CMOS
Features
• Single 5V Power Supply
• 100mW Output Power Into 50Ω
• 25dB Gain Control Range
GC
PHASE
VDD1
GND2
LO IN
GND1
I REF
I SIG
1
2
3
4
5
6
7
8
16 STAND BY
15 VDD2
POWER
CONTROL
• Excellent Phase & Amplitude Balance
• Digitally Controlled Stand-By Mode
• 800MHz to 1000MHz Operation
14 VDD3
13 GND3
-45°
12 RF OUT
11 GND4
+45°
10 Q REF
Ordering Information
Σ
RF2423
RF2423 PCBA
100mW Spread-Spectrum Transmitter IC
Fully Assembled Evaluation Board
9
Q SIG
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A3 001218
5-35
RF2423
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +7.5
V
DC
Caution! ESD sensitive device.
Power Down Voltage (V
)
V
+0.4
DD
V
PD
DC
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
+6
dBm
°C
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
-40 to +85
-40 to +150
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T=25 °C, V =5.3V, V =5.3V
Carrier Input (LO IN)
Frequency Range
Power Level
Input Impedance
Modulation Input
Frequency Range
DD
GC
800 to 1000
0 to +6
55-j120
MHz
dBm
Ω
915MHz
5
DC to 100
2.0 to 3.0
MHz
V
Reference Voltage (V
)
REF
Modulation for 100mW Output
Power (I & Q)
V
±2
V
REF
Maximum Modulation (I & Q)
V
±2.5
REF
V
Quadrature Phase Error
Input Impedance
DC Offset (I & Q)
±3
3000
40
°
Ω
mV
200
+5
V
=5.3V, VGC=5.3V, LO power=0dBm,
DD
LO frequency=915MHz, SSB, I/Q=2.0V
RF Output
P
sine wave, V
=3V
REF
Output Power
+22
-15
+22
-10
dBm
dBm
V
=0V
GAIN
Output Impedance
Output VSWR
Second Harmonic Output
Other Harmonics Output
Sideband Suppression
Carrier Suppression
50
2:1
-45
<-20
35
Ω
dBc
dBc
dB
25
22
30
dB
Modulation DC offset can be externally
adjusted for optimum suppression. Carrier
suppression is then typically better than
40dB.
Output Level Control
Control Range
Control Voltage
25
1 to 4
<1.5
dB
V
mA
Control Input Current
Standby Mode
Turn On/Off Time
STANDBY Input Impedance
Power Down “ON”
<100
>50
ns
kΩ
V
V
Threshold voltage; Part is turned “ON”
Threshold voltage; Part is turned “OFF”
CC
Power Down “OFF”
Power Supply
Voltage
0
V
5
V
Specifications
4.5 to 6.0
V
Operating limits
Current
60
110
50
2
170
20
mA
mA
mA
Total, 100mW output power
Total, minimum output power
Standby mode
5-36
Rev A3 001218
RF2423
Pin
1
Function Description
Interface Schematic
Gain control of the RF amplifier. This pin can be used to control the out-
GC
5 kΩ
GC
put power over a 25dB range. Output power is the lowest when the
control voltage is 1V or lower, and the highest when set to 4V or higher.
When a fixed maximum output level is needed, it is recommended to
connect this pin to VDD.
10 kΩ
This pin adjusts the phase of the I/Q signals. However, the control is
very sensitive and hard to control. Control voltage change for a few
degrees adjustment is in the order of 10mV. Device to device and tem-
perature variation are not characterized. Therefore it is not recom-
mended to use this pin; leave it not connected. Do NOT connect it to
ground. For compensating large errors in the I/Q signals supplied to the
device or in control loops, this pin may prove useful.
2
3
PHASE
VDD1
PHASE
5
Power supply to all circuits except the RF output stages. It is recom-
mended to put some RF decoupling on this pin, though it is not critical.
An optional 0.1µF capacitor is required if no other low frequency
bypass capacitor is nearby.
Ground connection for the gain controlled RF amplifier. Keep traces
physically short and connect immediately to ground plane for best per-
formance.
4
5
GND2
LO IN
Modulator LO input. A series 22nH inductor can be used for matching.
This pin is NOT internally DC blocked. An external blocking capacitor
must be provided if the pin is connected to a device with DC present. A
DC path to ground (i.e. an inductor or resistor to ground) is, however,
acceptable at this pin. If a blocking capacitor is required, a value of
33pF is recommended.
LO IN
4 kΩ
Ground connection for the baseband, LO and mixer circuits. Keep
traces physically short and connect immediately to ground plane for
best performance.
6
7
GND1
I REF
Reference voltage for the I mixer. This voltage should be the same as
the DC voltage supplied to the I SIG pin. To obtain a carrier suppres-
sion of better than 25dB it may be tuned ±0.15V (relative to the I SIG
DC voltage). Without tuning, it will typically be better than 25dB. Input
impedance of this pin is about 3kΩ.
I REF
I SIG
2 kΩ
2 kΩ
1 kΩ
1 kΩ
Baseband input to the I mixer. This pin is DC coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude
of 5V. The DC level supplied to this pin should be VDD2/2. Input imped-
ance of this pin is about 3kΩ.
8
9
I SIG
Baseband input to the Q mixer. This pin is DC coupled. Maximum out-
put power is obtained when the input signal has a peak to peak ampli-
tude of 5V. The DC level supplied to this pin should be VDD2/2. Input
impedance of this pin is about 3kΩ.
Q SIG
Q REF
Q SIG
2 kΩ
1 kΩ
2 kΩ
1 kΩ
Reference voltage for the Q mixer. This voltage should be the same as
the DC voltage supplied to the Q SIG pin. To obtain a carrier suppres-
sion of better than 25dB it may be tuned ±0.15V (relative to the Q SIG
DC voltage). Without tuning it will typically be better than 25dB. Input
impedance of this pin is about 3kΩ.
10
Q REF
Rev A3 001218
5-37
RF2423
Pin
11
Function Description
Interface Schematic
Ground connection for the RF driver and output stage. Keep traces
physically short and connect immediately to ground plane for best per-
formance. Having a good ground connection on this pin is extremely
important due to the high RF levels in the circuits connected to this pin.
GND4
50Ω RF output. This pin is not internally DC blocked and an external
blocking capacitor of 22pF is needed.
12
RF OUT
VDD
RF OUT
Ground connection for the RF driver and output stage. Keep traces
physically short and connect immediately to ground plane for best per-
formance. Having a good ground connection on this pin is extremely
important due to the high RF levels in the circuits connected to this pin.
13
14
GND3
VDD3
Power supply for the RF output stage. A 33pF external bypass capaci-
tor is required and an optional 0.1µF will be required if no other low fre-
quency bypass capacitors are nearby. The trace length between the pin
and the bypass capacitors should be minimized. The ground side of the
bypass capacitors should connect immediately to ground plane.
Having good bypassing on this pin is especially important because of
the high levels of RF signal on the circuits connected to this pin.
5
Power supply for the RF driver stage. A 33pF external bypass capacitor
is required and an optional 0.1µF will be required if no other low fre-
quency bypass capacitors are near by. The trace length between the
pin and the bypass capacitors should be minimized. The ground side of
the bypass capacitors should connect immediately to ground plane.
Having good bypassing on this pin is especially important because of
the high levels of RF signal on the circuits connected to this pin.
15
16
VDD2
Standby mode control. When this pin is 0V all circuits are turned off,
and when this pin is VDD all circuits are operating. This is a high
impedance input, internally connected to the gate of a few transistors.
To minimize current consumption in power down mode, this pin should
be as close to 0 V as possible, or even a little negative. Turn-on voltage
of some parts of the circuit may be as low as 0.0 V. In order to maxi-
mize output power this pin should be as close to VDD as possible dur-
ing normal operation.
STANDBY
5-38
Rev A3 001218
RF2423
Application Schematic
CMOS
GAIN
CONTROL
STANDBY
VDD
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
POWER
CONTROL
VDD
Note 1
100 nF
100 nF
Note 1
100 nF
22 nH
-45°
+45°
LO INPUT
RF OUTPUT
22 pF
VREF
VREF
5
R
R
R
R
C
Σ
C
I INPUT
Q INPUT
C
C
NOTE 1:
NOTE 2:
33 pF SMD capacitor mounted as close to the package pin as possible, grounded
through via to the ground plane with minimum inductance.
The values of R and C depend on the lowest frequency of the baseband signal.
Rev A3 001218
5-39
RF2423
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
1
P2
1
P1-1
P1-2
P1-3
P1-4
QSIG
QREF
IREF
ISIG
P2-1
P2-2
LEVEL
PHASE
GND
2
2
3
3
P2-4
P2-5
VDD
4
4
GND
STBY
5
5
P2-1
C4
100 nF
2423400 Rev -
5
P2-5
P2-4
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
C5
100 nF
C3
36 pF
POWER
CONTROL
P2-2
P2-4
C2
36 pF
C6
100 nF
C7
100 pF
LO IN
J1
RF OUT
J2
-45°
+45°
L1
22 nH
C1
36 pF
R2
33
R3
Ω
0
Ω
P1-3
P1-4
P1-2
P1-1
Σ
R1
22
R4
22
Ω
Ω
5-40
Rev A3 001218
RF2423
Evaluation Board Layout
1.25” x 1.25”
Board Thickness 0.031”; Board Material FR-4
5
Rev A3 001218
5-41
RF2423
5
5-42
Rev A3 001218
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