NBB-310 [RFMD]
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz; 级联宽带的GaAs MMIC放大器直流到12GHz的
| 型号： | NBB-310 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| 文件： | 总10页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NBB-310
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
0
Typical Applications
• Narrow and Broadband Commercial and
Military Radio Designs
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
• Linear and Saturated Amplifiers
Product Description
The NBB-310 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for gen-
eral purpose RF and microwave amplification needs. This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-310 provides flexibility and stability. The
NBB-310 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for high-
volume tape-and-reel requirements. It is available in
either packaged or chip (NBB-310-D) form, where its gold
metallization is ideal for hybrid circuit designs.
45°
0.055
(1.40)
UNITS:
Inches
(mm)
0.040
(1.02)
0.070
(1.78)
0.020
0.200 sq.
(5.08)
0.005
(0.13)
Optimum Technology Matching® Applied
Package Style: Micro-X, 4-Pin, Ceramic
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si Bi-CMOS
InGaP/HBT
Si CMOS
Features
SiGe Bi-CMOS
9
• Reliable, Low-Cost HBT Design
• 13dB Gain
• High P1dB of +15.2dBm at 6GHz
• Single Power Supply Operation
• 50Ω I/O Matched for High Freq. Use
GND
4
MARKING - N6
RF IN
1
3 RF OUT
Ordering Information
NBB-310
Cascadable Broadband GaAs MMIC Amplifier DC to
12GHz
2
NBB-310-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
GND
NBB-310-D
NBB-310-E
NBB-X-K1
NBB-310 Chip Form (100 pieces minimum order)
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A5 030912
4-17
NBB-310
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
+20
350
70
200
dBm
mW
mA
°C
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
-45 to +85
-65 to +150
Exceeding any one or a combination of these limits may cause permanent damage.
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
V =+5V, I =50mA, Z =50Ω, T =+25°C
Overall
D
CC
0
A
Small Signal Power Gain, S21
12.5
12.0
11.0
9.0
13.0
12.5
11.5
dB
dB
dB
dB
dB
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 8.0GHz
f=8.0GHz to 12.0GHz
f=0.1GHz to 8.0GHz
f=0.1GHz to 7.0GHz
f=7.0GHz to 10.0GHz
10.0
Gain Flatness, GF
Input and Output VSWR
±0.6
1.4:1
1.75:1
2.0:1
12.0
f=10.0GHz to 12.0GHz
BW3 (3dB)
Bandwidth, BW
GHz
Output Power @
-1dB Compression, P1dB
13.8
15.2
14.5
12.0
4.9
dBm
dBm
dBm
dBm
dB
f=2.0GHz
f=6.0GHz
f=8.0GHz
f=12.0GHz
f=3.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
+24.0
-17
dBm
dB
f=2.0GHz
f=0.1GHz to 12.0GHz
Device Voltage, V
4.6
5.0
5.3
V
D
Gain Temperature Coefficient,
-0.0015
dB/°C
δG /δT
T
MTTF versus Temperature
@ ICC=50mA
Case Temperature
Junction Temperature
MTTF
85
139
>1,000,000
°C
°C
hours
Thermal Resistance
θ
216
°C/W
JC
JT – TCASE
VD ⋅ ICC
--------------------------
= θJC(°C ⁄ Watt)
4-18
Rev A5 030912
NBB-310
Pin
1
Function Description
Interface Schematic
RF input pin. This pin is NOT internally DC blocked. A DC blocking
RF IN
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2
3
GND
RF output and bias pin. Biasing is accomplished with an external series
RF OUT
resistor and choke inductor to V . The resistor is selected to set the
CC
RF OUT
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
(VCC – VDEVICE
)
-------------------------------------------
R =
ICC
RF IN
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating cur-
rent over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 8.0V is available, to provide DC feedback to prevent thermal run-
away. Because DC is present on this pin, a DC blocking capacitor, suit-
able for the frequency of operation, should be used in most
applications. The supply side of the bias network should also be well
bypassed.
Same as pin 2.
4
GND
Rev A5 030912
4-19
NBB-310
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC
RCC
4
2
L choke
(optional)
1
3
In
Out
C block
C block
VDEVICE
VD = 5 V
Recommended Bias Resistor Values
Supply Voltage, V (V)
8
10
12
15
20
300
CC
Bias Resistor, R (Ω)
60
100
140
200
CC
4-20
Rev A5 030912
NBB-310
Chip Outline Drawing - NBB-310-D
Chip Dimensions: 0.017” x 0.017” x 0.004”
UNITS:
Inches
(mm)
Back of chip is ground.
OUTPUT
INPUT
0.017 ± 0.001
(0.44 ± 0.03)
GND
VIA
0.017 ± 0.001
(0.44 ± 0.03)
0.004 ± 0.001
(0.10 ± 0.03)
Sales Criteria - Unpackaged Die
Die Sales Information
• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be nego-
tiated on a case-by-case basis.
• Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product
Final Visual Inspection Criteria1.
• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allow-
able.
Die Packaging
• All die are packaged in GelPak ESD protective containers with the following specification:
O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X8).
• GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is
opened the GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed
GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit 2.
Package Storage
• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit2.
Die Handling
• Proper ESD precautions must be taken when handling die material.
• Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of twee-
zers. Do not touch die with any part of the body.
• When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force
may damage GaAs devices.
Rev A5 030912
4-21
NBB-310
Die Attach
• The die attach process mechanically attaches the die to the circuit substrate. In addition, the utilization of proper die
attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the
thermal path by which heat can leave the chip.
• Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment meth-
ods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure
involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the sub-
strate.
• All connections should be made on the topside of the die. It is essential to performance that the backside be well
grounded and that the length of topside interconnects be minimized.
• Some die utilize vias for effective grounding. Care must be exercised when mounting die to preclude excess run-out
on the topside.
Die Wire Bonding
• Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are accept-
able practices for wire bonding.
• All bond wires should be made as short as possible.
Notes
1RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die
inspection personnel to determine final visual acceptance of die product prior to shipping to customers.
2RFMD takes precautions to ensure that die product is shipped in accordance with quality standards established to min-
imize material shift. However, due to the physical size of die-level product, RFMD does not guarantee that material will
not shift during transit, especially under extreme handling circumstances. Product replacement due to material shift will
be at the discretion of RFMD.
4-22
Rev A5 030912
NBB-310
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.
Each tool kit contains the following.
• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
• 2 Broadband Evaluation Boards and High Frequency SMA Connectors
• Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A5 030912
4-23
NBB-310
Tape and Reel Dimensions
All Dimensions in Millimeters
T
A
O
B
S
D
F
330 mm (13") REEL
ITEMS
Micro-X, MPGA
SYMBOL SIZE (mm) SIZE (inches)
330 +0.25/-4.0 13.0 +0.079/-0.158
Diameter
B
T
FLANGE Thickness
18.4 MAX
12.4 +2.0
102.0 REF
0.724 MAX
0.488 +0.08
4.0 REF
Space Between Flange
Outer Diameter
F
O
S
A
D
Spindle Hole Diameter
Key Slit Width
13.0 +0.5/-0.2 0.512 +0.020/-0.008
HUB
1.5 MIN
0.059 MIN
0.795 MIN
Key Slit Diameter
20.2 MIN
LEAD 1
User Direction of Feed
All dimensions in mm
4.0
SEE NOTE 1
+0.1
-0.0
5.0
B1
0.30
± 0.05
2.00 ± 0.05
SEE NOTE 6
A
R0.3 MAX.
5.0 MIN.
1.75
5.50 ± 0.05
SEE NOTE 6
12.0
± 0.3
B1
Bo
2.5
A1
Ko
R0.3 TYP.
A
Ao
8.0
SECTION A-A
NOTES:
Ao = 7.0 MM
A1 = 1.45 MM
Bo = 7.0 MM
B1 = 0.9 MM
Ko = 2.0 MM
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C
4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
4-24
Rev A5 030912
NBB-310
P1dB versus Frequency at 25°C
POUT/Gain versus PIN at 6 GHz
20.0
15.0
10.0
5.0
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
Pout (dBm)
Gain (dB)
0.0
0.0
-2.0
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
-14.0
-9.0
-4.0
1.0
6.0
Frequency (GHz)
PIN (dBm)
Third Order Intercept versus Frequency at 25°C
POUT/Gain versus PIN at 14 GHz
18.0
16.0
14.0
12.0
10.0
8.0
30.0
25.0
20.0
15.0
10.0
5.0
6.0
4.0
Pout (dBm)
Gain (dB)
2.0
0.0
0.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
Frequency (GHz)
PIN (dBm)
Rev A5 030912
4-25
NBB-310
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector
loss variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S11 versus Frequency, Over Temperature
S12 versus Frequency, Over Temperature
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
0.0
-2.0
+25 C
-40 C
+85 C
-4.0
-6.0
-8.0
-10.0
-12.0
-14.0
-16.0
-18.0
-20.0
+25 C
-40 C
+85 C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
Frequency (GHz)
Frequency (GHz)
S21 versus Frequency, Over Temperature
S22 versus Frequency, Over Temperature
16.0
14.0
12.0
10.0
8.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
-45.0
-50.0
6.0
4.0
+25 C
-40 C
+85 C
+25 C
-40 C
+85 C
2.0
0.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
Frequency (GHz)
Frequency (GHz)
4-26
Rev A5 030912
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