NBB-312 [RFMD]
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz; 级联宽带的GaAs MMIC放大器直流到12GHz的
| 型号： | NBB-312 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| 文件： | 总8页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NBB-312
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
0
Typical Applications
• Narrow and Broadband Commercial and
Military Radio Designs
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
• Linear and Saturated Amplifiers
Product Description
The NBB-312 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for gen-
eral purpose RF and microwave amplification needs. This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-312 provides flexibility and stability. The
NBB-310 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for high-
volume tape-and-reel requirements. It is available in
either 1,000 or 3,000 piece-per-reel quantities. Connec-
torized evaluation board designs optimized for high fre-
quency are also available for characterization purposes.
2.94 min
3.28 max
0.025 min
0.125 max
0.50 nom
0.50 nom
1.00 min
1.50 max
Pin 1
Indicator
Pin 1
Indicator
RF OUT
Ground
RF IN
N6
Ground
Lid ID
1.70 min
1.91 max
0.98 min
1.02 max
0.38 nom
2.39 min
2.59 max
0.37 min
0.63 max
All Dimensions in Millimeters
Notes:
1. Solder pads are coplanar to within ±0.025 mm.
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.
3. Mark to include two characters and dot to reference pin 1.
Optimum Technology Matching® Applied
Package Style: MPGA, Bowtie, 3x3, Ceramic
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si Bi-CMOS
InGaP/HBT
Si CMOS
Features
SiGe Bi-CMOS
9
• Reliable, Low-Cost HBT Design
• 12.5dB Gain
• High P1dB of +15.8dBm at 6GHz
• Single Power Supply Operation
• 50Ω I/O Matched for High Frequency
Use
Pin 1
Indicator
1
8
7
2
9
6
3
4
5
RF OUT
Ground
Ground
RF IN
Ordering Information
NBB-312
Cascadable Broadband GaAs MMIC Amplifier DC to
12GHz
NBB-312-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NBB-312-E
NBB-X-K1
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices, Inc.
7628 Thorndike Road
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Greensboro, NC 27409, USA
Functional Block Diagram
Rev A3 030912
4-25
NBB-312
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
+20
350
70
200
dBm
mW
mA
°C
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
-45 to +85
-65 to +150
Exceeding any one or a combination of these limits may cause permanent damage.
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
V =+5V, I =50mA, Z =50Ω, T =+25°C
Overall
D
CC
0
A
Small Signal Power Gain, S21
12.5
12.0
11.4
9.0
12.9
12.9
11.7
9.7
+0.6
1.2:1
1.65:1
2.0:1
1.5:1
11.0
dB
dB
dB
dB
dB
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 8.0GHz
f=8.0GHz to 12.0GHz
f=0.1GHz to 8.0GHz
f=0.1GHz to 7.0GHz
f=7.0GHz to 10.0GHz
f=10.0GHz to 12.0GHz
f=0.1GHz to 12.0GHz
BW3 (3dB)
Gain Flatness, GF
Input VSWR
Output VSWR
Bandwidth, BW
GHz
Output Power @
-1dB Compression, P1dB
14.9
15.8
15.0
12.0
4.9
dBm
dBm
dBm
dBm
dB
f=2.0GHz
f=6.0GHz
f=8.0GHz
f=12.0GHz
f=3.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
+24.0
-15.6
5.0
dBm
dB
V
f=2.0GHz
f=0.1GHz to 12.0GHz
Device Voltage, V
4.7
5.3
D
Gain Temperature Coefficient,
-0.0015
dB/°C
δG /δT
T
MTTF versus Temperature
@ ICC=50mA
Case Temperature
Junction Temperature
MTTF
85
123
>1,000,000
°C
°C
hours
Thermal Resistance
θ
152
°C/W
JC
JT – TCASE
VD ⋅ ICC
--------------------------
= θJC(°C ⁄ Watt)
4-26
Rev A3 030912
NBB-312
Pin
1
Function Description
Interface Schematic
Ground connection. For best performance, keep traces physically short
GND
and connect immediately to ground plane.
Same as pin 1.
2
3
4
GND
GND
RF IN
Same as pin 1.
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
Same as pin 1.
5
6
7
8
GND
GND
GND
Same as pin 1.
Same as pin 1.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V . The resistor is selected to set the
RF OUT
CC
RF OUT
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
(VCC – VDEVICE
)
-------------------------------------------
R =
ICC
RF IN
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating cur-
rent over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 8.0V is available, to provide DC feedback to prevent thermal run-
away. Alternatively, a constant current supply circuit may be imple-
mented. Because DC is present on this pin, a DC blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. The supply side of the bias network should also be well
bypassed.
Same as pin 1.
9
GND
Rev A3 030912
4-27
NBB-312
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC
RCC
1,2,3
L choke
(optional)
4
8
In
Out
C block
C block
VDEVICE
5,6,7,9
VD = 5 V
Recommended Bias Resistor Values
Supply Voltage, V (V)
8
10
100
12
15
20
300
CC
Bias Resistor, R (Ω)
60
140
200
CC
Application Notes
Bonding Temperature (Wedge or Ball)
It is recommended that the heater block temperature be set to 160°C±10°C.
4-28
Rev A3 030912
NBB-312
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.
Each tool kit contains the following.
• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
• 2 Broadband Evaluation Boards and High Frequency SMA Connectors
• Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A3 030912
4-29
NBB-312
Tape and Reel Dimensions
All Dimensions in Millimeters
T
A
O
B
S
D
F
330 mm (13") REEL
ITEMS
Micro-X, MPGA
SYMBOL SIZE (mm) SIZE (inches)
330 +0.25/-4.0 13.0 +0.079/-0.158
Diameter
B
T
FLANGE Thickness
18.4 MAX
12.4 +2.0
102.0 REF
0.724 MAX
0.488 +0.08
4.0 REF
Space Between Flange
Outer Diameter
F
O
S
A
D
Spindle Hole Diameter
Key Slit Width
13.0 +0.5/-0.2 0.512 +0.020/-0.008
HUB
1.5 MIN
0.059 MIN
0.795 MIN
Key Slit Diameter
20.2 MIN
PIN 1
User Direction of Feed
All dimensions in mm
4.0
See Note 1
+0.1
-0.0
2.00 ± 0.05
See Note 6
1.5
A
0.30 ± 0.05
1.5 MIN.
1.75
5.50 ± 0.05
R0.3 MAX.
12.00
± 0.30
See Note 6
Bo
Ko
Ao
8.0
A
R0.5 TYP
SECTION A-A
NOTES:
Ao = 3.6 MM
Bo = 3.6 MM
Ko = 1.7 MM
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C
4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
4-30
Rev A3 030912
NBB-312
P1dB versus Frequency at 25°C
POUT/Gain versus PIN at 6 GHz
20.0
15.0
10.0
5.0
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
Pout (dBm)
Gain (dB)
2.0
0.0
0.0
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
-14.0
-9.0
-4.0
1.0
6.0
Frequency (GHz)
PIN (dBm)
Third Order Intercept versus Frequency at 25°C
POUT/Gain versus PIN at 14 GHz
14.0
12.0
10.0
8.0
30.0
25.0
20.0
15.0
10.0
5.0
6.0
4.0
2.0
0.0
-2.0
-4.0
-6.0
Pout (dBm)
Gain (dB)
0.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
Frequency (GHz)
PIN (dBm)
Rev A3 030912
4-31
NBB-312
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector
loss variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S11 versus Frequency at +25°C
S12 versus Frequency at +25°C
0.0
-5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
-10.0
-15.0
-20.0
0.0
5.0
10.0
15.0
0.0
5.0
10.0
15.0
Frequency (GHz)
Frequency (GHz)
S21 versus Frequency at +25°C
S22 versus Frequency at +25°C
15.0
10.0
5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
0.0
0.0
5.0
10.0
15.0
0.0
5.0
10.0
15.0
Frequency (GHz)
Frequency (GHz)
4-32
Rev A3 030912
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